Data Sheet

SO
T6
66
NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Low threshold voltage
 ESD protection up to 2 kV
 Very fast switching
 AEC-Q101 qualified
 Trench MOSFET technology
1.3 Applications
 Level shifter
 Load switch
 Power supply converter
 Switching circuits
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
-
-
-30
V
-8
-
8
V
-
-
-220
mA
-
-
30
V
-8
-
8
V
-
-
400
mA
-
1
1.4
Ω
-
2.8
4.1
Ω
TR2 (P-channel)
VDS
drain-source voltage
VGS
gate-source voltage
drain current
ID
VGS = -4.5 V; Tamb = 25 °C
[1]
TR1 (N-channel)
VDS
drain-source voltage
VGS
gate-source voltage
drain current
ID
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
[1]
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 350 mA;
Tj = 25 °C
TR2 (P-channel), Static characteristics
RDSon
[1]
drain-source on-state
resistance
VGS = -4.5 V; ID = -200 mA;
Tj = 25 °C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
S1
source TR1
2
G1
gate TR1
3
D2
drain TR2
4
S2
source TR2
5
G2
gate TR2
6
D1
drain TR1
Simplified outline
6
5
Graphic symbol
D1
4
D2
G1
1
2
G2
3
SOT666 (SOT666)
S1
S2
017aaa262
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
NX3008CBKV
SOT666
plastic surface-mounted package; 6 leads
SOT666
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
NX3008CBKV
AC
[1]
% = placeholder for manufacturing site code.
NX3008CBKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
2 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Tj = 25 °C
-
-30
V
TR2 (P-channel)
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
total power dissipation
Ptot
8
V
[1]
-
-220
mA
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-140
mA
Tamb = 25 °C; single pulse; tp ≤ 10 µs
peak drain current
IDM
-8
VGS = -4.5 V; Tamb = 25 °C
-
-0.9
A
[2]
-
330
mW
[1]
-
390
mW
Tsp = 25 °C
-
1090
mW
Tj = 25 °C
-
30
V
-8
8
V
Tamb = 25 °C
TR1 (N-channel)
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
-
400
mA
VGS = 4.5 V; Tamb = 100 °C
[1]
-
260
mA
-
1.6
A
[2]
-
330
mW
[1]
-
390
mW
-
1090
mW
-
500
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Per device
Tamb = 25 °C
[2]
Ptot
total power dissipation
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
TR1 (N-channel), Source-drain diode
source current
IS
Tamb = 25 °C
[1]
-
400
mA
Tamb = 25 °C
[1]
-
-220
mA
HBM
[3]
-
2000
V
HBM
[3]
-
2000
V
TR2 (P-channel), Source-drain diode
source current
IS
TR1 N-channel), ESD maximum rating
VESD
electrostatic discharge voltage
TR2 (P-channel), ESD maximum rating
VESD
electrostatic discharge voltage
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[3]
Measured between all pins.
NX3008CBKV
Product data sheet
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Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
3 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
001aao121
120
Pder
(%)
Ider
(%)
80
80
40
40
0
-75
Fig 1.
001aao122
120
-25
25
75
125
Tj (°C)
0
-75
175
Normalized total power dissipation as a
function of junction temperature
Fig 2.
-25
25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
001aao252
10
lD
(A)
1
(1)
10-1
(2)
(3)
(4)
10-2
10-1
(5)
1
10
VDS (V)
102
IDM is a single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad
Fig 3.
Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
NX3008CBKV
Product data sheet
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Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
4 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
001aao254
-10
lD
(A)
-1
(1)
-10-1
(2)
(3)
(4)
(5)
-10-2
-10-1
-1
-10
-102
VDS (V)
IDM is a single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad
Fig 4.
Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to ambient
in free air
in free air
Min
Typ
Max
Unit
[1]
-
-
250
K/W
[1]
-
330
380
K/W
[2]
-
280
320
K/W
-
-
115
K/W
[1]
-
330
380
K/W
[2]
-
280
320
K/W
-
-
115
K/W
Per device
Rth(j-a)
TR1 (N-channel)
Rth(j-a)
Rth(j-sp)
thermal resistance from junction to ambient
thermal resistance from junction to solder point
TR2 (P-channel)
Rth(j-a)
Rth(j-sp)
thermal resistance from junction to ambient
in free air
thermal resistance from junction to solder point
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
NX3008CBKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
017aaa064
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 5.
TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa065
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102
0.25
0.33
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 6.
TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX3008CBKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
6 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
017aaa064
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 7.
TR2, Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa065
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102
0.25
0.33
0.2
0.1
0.05
0
0.02
0.01
10
1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 8.
TR2, Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX3008CBKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
7 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
TR2 (P-channel), Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-30
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.6
-0.9
-1.1
V
IDSS
drain leakage current
VDS = -30 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -30 V; VGS = 0 V; Tj = 150 °C
-
-
-10
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-0.2
-1
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-0.2
-1
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-10
-
nA
RDSon
gfs
drain-source on-state
resistance
transfer conductance
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-10
-
nA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
-
-1
-
nA
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
-
-1
-
nA
VGS = -4.5 V; ID = -200 mA; Tj = 25 °C
-
2.8
4.1
Ω
VGS = -2.5 V; ID = -10 mA; Tj = 25 °C
-
5.3
6.5
Ω
VGS = -4.5 V; ID = -200 mA; Tj = 150 °C
-
5.3
7.8
Ω
VDS = -10 V; ID = -200 mA; Tj = 25 °C
-
160
-
mS
TR1 (N-channel), Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.6
0.9
1.1
V
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 30 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
0.2
1
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
0.2
1
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
10
-
nA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
10
-
nA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
-
1
-
nA
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
-
1
-
nA
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
transfer conductance
VGS = 4.5 V; ID = 350 mA; Tj = 25 °C
-
1
1.4
Ω
VGS = 4.5 V; ID = 350 mA; Tj = 150 °C
-
1.8
2.5
Ω
VGS = 2.5 V; ID = 200 mA; Tj = 150 °C
-
1.4
2.1
Ω
VGS = 1.8 V; ID = 10 mA; Tj = 25 °C
-
2
2.8
Ω
VDS = 10 V; ID = 350 mA; Tj = 25 °C
-
310
-
mS
-
0.52
0.68
nC
-
0.17
-
nC
-
0.08
-
nC
TR1 (N-channel), Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
NX3008CBKV
Product data sheet
VDS = 15 V; ID = 400 mA; VGS = 4.5 V;
Tj = 25 °C
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Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
8 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Table 7.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ciss
input capacitance
-
34
50
pF
Coss
output capacitance
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
6.5
-
pF
Crss
reverse transfer
capacitance
-
2.2
-
pF
td(on)
turn-on delay time
-
15
30
ns
tr
rise time
-
11
-
ns
td(off)
turn-off delay time
-
69
138
ns
tf
fall time
-
19
-
ns
-
0.55
0.72
nC
-
0.23
-
nC
-
0.09
-
nC
-
31
46
pF
-
6.5
-
pF
-
2.3
-
pF
-
19
38
ns
-
30
-
ns
VDS = 20 V; RL = 250 Ω; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
TR2 (P-channel), Dynamic characteristics
QG(tot)
total gate charge
VDS = -15 V; ID = -200 mA;
VGS = -4.5 V; Tj = 25 °C
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
65
130
ns
tf
fall time
-
38
-
ns
-0.47
-0.88
-1.2
V
0.47
0.85
1.2
V
VDS = -15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -20 V; RL = 250 Ω; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
TR2 (P-channel), Source-drain diode characteristics
VSD
source-drain voltage
IS = -200 mA; VGS = 0 V; Tj = 25 °C
TR1 (N-channel), Source-drain diode characteristics
VSD
source-drain voltage
NX3008CBKV
Product data sheet
IS = 350 mA; VGS = 0 V; Tj = 25 °C
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Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
9 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
001aao267
0.4
ID
(A)
2.5 V
001aao268
10-3
4.5 V
ID
(A)
2V
0.3
(2)
(1)
(3)
10-4
1.75 V
0.2
10-5
1.5 V
0.1
VGS = 1.25 V
0.0
0
1
2
3
VDS (V)
10-6
0.0
4
Tj = 25 °C
0.5
1.0
VGS (V)
1.5
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 9.
TR1: Output characteristics: drain current as a
function of drain-source voltage; typical values
001aao269
6
Fig 10. TR1: Sub-threshold drain current as a function
of gate-source voltage
001aao270
6
RDS (on)
(Ω)
RDS (on)
(Ω)
(1)
(2)
(3)
4
4
(4)
2
2
(1)
(5)
(2)
(6)
0
0.0
0.1
0.2
0.3
ID (A)
0.4
0
0
1
Tj = 25 °C
ID = 400 mA
(1) VGS = 1.5 V
(1) Tj = 150 °C
(2) VGS = 1.75 V
(2) Tj = 25 °C
2
3
4
VGS (V)
5
(3) VGS = 2.0 V
(4) VGS = 2.25 V
(5) VGS = 2.5 V
(6) VGS = 4.5 V
Fig 11. TR1: Drain-source on-state resistance as a
function of drain current; typical values
NX3008CBKV
Product data sheet
Fig 12. TR1: Drain-source on-state resistance as a
function of gate-source voltage; typical values
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Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
10 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
001aao272
2.0
a
001aao271
0.4
1.5
ID
(A)
(1)
(2)
0.3
1.0
0.2
0.5
0.1
0.0
-60
0.0
0
1
2
VGS (V)
0
60
120
Tj (˚C)
180
3
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 13. TR1: Transfer characteristics: drain current as
a function of gate-source voltage; typical
values
001aao273
1.5
Fig 14. TR1: Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
001aao274
102
VGS(th)
(V)
(1)
C
(pF)
(1)
1.0
(2)
10
0.5
(2)
(3)
(3)
0.0
-60
0
60
120
Tj (˚C)
180
1
10-1
1
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(1)Ciss
(2) typical values
(2)Coss
(3) minimum values
(3)Crss
Fig 15. TR1: Gate-source threshold voltage as a
function of junction temperature
NX3008CBKV
Product data sheet
10
VDS (V)
102
Fig 16. TR1: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
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Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
11 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
001aao275
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
003aaa508
0
0.0
0.2
0.4
QG (nC)
0.6
ID = 0.4 A; VDS = 15 V; Tamb = 25 °C
Fig 17. TR1: Gate-source voltage as a function of gate
charge; typical values
001aao276
0.4
Fig 18. Gate charge waveform definitions
001aao256
-0.25
-4.5 V
ID
(A)
IS
(A)
-3 V
-0.20
-2.5 V
0.3
(1)
-0.15
(2)
0.2
-0.10
-2 V
0.1
-0.05
VGS = -1.5 V
0.0
0.0
0.4
0.6
VSD (V)
VGS = 0 V
1.2
0.00
0
-1
-2
-3
VDS (V)
-4
Tj = 25 °C
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 19. TR1: Source current as a function of
source-drain voltage; typical values
NX3008CBKV
Product data sheet
Fig 20. TR2: Output characteristics: drain current as a
function of drain-source voltage; typical values
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Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
12 of 21
NX3008CBKV
NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
001aao257
-10-3
001aao258
14
RDS (on)
(Ω)
12
ID
(A)
(1)
(1)
(2)
(3)
(2)
(3)
(4)
10
-10-4
8
6
(5)
-10-5
4
(6)
2
-10-6
0.0
-0.5
-1.0
VGS (V)
0
-1.5
0
-0.05
-0.10
Tj = 25 °C; VDS = -5 V
Tj = 25 °C
(1) minimum values
(1) VGS = -1.75 V
(2) typical values
(2) VGS = -2.0 V
(3) maximum values
(3) VGS = -2.25 V
-0.15
-0.20
-0.25
ID (A)
(4) VGS = -2.5 V
(5) VGS = -3.0 V
(6) VGS = -4.5 V
Fig 21. TR2: Sub-threshold drain current as a function
of gate-source voltage
001aao259
14
RDS (on)
(Ω)
12
Fig 22. TR2: Drain-source on-state resistance as a
function of drain current; typical values
001aao260
-0.25
ID
(A)
-0.20
10
(1)
(2)
-0.15
8
6
-0.10
(1)
4
(2)
-0.05
2
0
0
-1
-2
-3
-4
VGS (A)
-5
0.00
0
-1
ID = -200 mA
VDS > ID x RDSon
(1) Tj = 150 °C
(1) Tj = 25 °C
(2) Tj = 25 °C
(2) Tj = 150 °C
Fig 23. TR2: Drain-source on-state resistance as a
function of gate-source voltage; typical values
NX3008CBKV
Product data sheet
-2
VGS (V)
-3
Fig 24. TR2: Transfer characteristics: drain current as
a function of gate-source voltage; typical
values
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30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
001aao261
2.0
001aao262
-1.5
a
VGS(th)
(V)
(1)
1.5
-1.0
(2)
1.0
(3)
-0.5
0.5
0.0
-60
0
60
120
Tj (˚C)
180
0.0
-60
0
60
120
Tj (˚C)
180
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 25. TR2: Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
Fig 26. TR2: Gate-source threshold voltage as a
function of junction temperature
001aao263
102
001aao264
-5
VGS
(V)
C
(pF)
-4
(1)
-3
10
(2)
-2
(3)
1
-10-1
-1
-10
-1
VDS (V)
-102
f = 1 MHz; VGS = 0 V
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
QG (nC)
ID = -200 mA; VDS = -15 V; Tamb = 25 °C
(1)Ciss
(2)Coss
(3)Crss
Fig 27. TR2: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
NX3008CBKV
Product data sheet
Fig 28. Gate-source voltage as a function of gate
charge; typical values
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30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
001aao265
-0.25
IS
(A)
-0.20
VDS
ID
-0.15
(1)
(2)
VGS(pl)
-0.10
VGS(th)
VGS
-0.05
QGS1
QGS2
QGS
QGD
QG(tot)
0.00
0.0
-0.4
003aaa508
-0.8
VSD (V)
-1.2
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 29. Gate charge waveform definitions
Fig 30. TR2: Source current as a function of
source-drain voltage; typical values
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 31. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
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Product data sheet
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30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
SOT666
Fig 32. Package outline SOT666 (SOT666)
NX3008CBKV
Product data sheet
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30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
10. Soldering
2.75
2.45
2.1
1.6
solder lands
0.4
(6×) 0.25
(2×)
0.538
2
1.7 1.075
0.3
(2×)
0.55
(2×)
placement area
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
(4×)
0.6
(2×)
0.5
(4×)
0.65
(2×)
sot666_fr
Fig 33. Reflow soldering footprint for SOT666 (SOT666)
NX3008CBKV
Product data sheet
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11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NX3008CBKV v.1
20110729
Product data sheet
-
-
NX3008CBKV
Product data sheet
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12. Legal information
12.1 Data sheet status
Document status [1] [2]
Product status [3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
NX3008CBKV
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
All information provided in this document is subject to legal disclaimers.
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NXP Semiconductors
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
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14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Test information . . . . . . . . . . . . . . . . . . . . . . . . .15
Quality information . . . . . . . . . . . . . . . . . . . . . .15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .16
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .18
Legal information. . . . . . . . . . . . . . . . . . . . . . . .19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .19
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Contact information. . . . . . . . . . . . . . . . . . . . . .20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 July 2011
Document identifier: NX3008CBKV