Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UG25N45
Preliminary
NPN SILICON TRANSISTOR
N-CHANNEL INSULATED
GATE BIPOLAR TRANSISTOR
„
DESCRIPTION
UTC UG25N45 is an N-channel NPN transistor. It can be used
in strobe flash applications
„
FEATURES
* Very high input impedance
* Very high pick current capability
* Gate drive: 4.5V
„
SYMBOL
Lead-free:
UG25N45L
Halogen-free: UG25N45G
„
ORDERING INFORMATION
Normal
UG25N45-TA3-T
Ordering Number
Lead Free
UG25N45L-TA3-T
Halogen Free
UG25N45G-TA3-T
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
Package
TO-220
Pin Assignment
1
2
3
G
C
E
Packing
Tube
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QW-R203-037.a
UG25N45
„
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
Collector-Emitter Voltage
VCEO
450
Gate-Emitter Voltage
VGEO
±6
Pulsed Gate-Emitter Current
IGEP
±8
Pulsed Collector Current
ICP
150
Power Dissipation @ TC=25°C
PD
2.5
Junction Temperature
TJ
+150
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction-to-Ambient
„
UNIT
V
V
A
A
W
°C
°C
°C
MIN
TYP
MAX
50
UNIT
℃/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Saturation Voltage
Collector-Emitter Leakage Current
Gate-Emitter Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
SYMBOL
VCE(SAT)
ICES
IGES
VGE=4.5V, ICP=150A (Pulsed)
VCE=450V, VGE=0 V
VGE=±6V, VCE=0V
VGE(TH)
VCE=VGE, IC=250uA
CIES
COES
CRES
tD(ON)
tR
tD(OFF)
tF
QG
QGE
QGC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VGE=0V, VCE=25V, f=1.0MHz
VCC=225V, IC =50A, RG=25Ω,
VGE=10V
VCE=360V, VGE=4.5V, IC=50A
MIN TYP MAX UNIT
6
0.35
8
10
10
1.2
V
uA
V
2227
200
79
pF
pF
pF
11.5
24.5
150
3.3
64.5
7
30
ns
ns
ns
ns
nC
nC
nC
2 of 3
QW-R203-037.a
UG25N45
„
Preliminary
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Switching Test Circuit
Gate Charge Test Circuit
Switching Waveforms
Application Test Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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