A-POWER AP28G45EM

AP28G45EM
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
▼ High Pick Current Capability
C
▼ 3.3V Gate Drive
▼ Strobe Flash Applications
VCE
450V
ICP
130A
C
C
C
C
G
G
E
SO-8
E
E
E
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VCE
Collector-Emitter Voltage
450
V
VGE
Gate-Emitter Voltage
±6
V
IGEP
Pulsed Gate-Emitter Voltage
±8
V
Pulsed Collector Current, VGE @ 3.3V
130
A
Maximum Power Dissipation
2.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
ICP
[email protected]=25℃
1
Electrical [email protected]=25oC(unless otherwise specified)
Parameter
Symbol
Test Conditions
VGE=± 6V, VCE=0V
Min.
Typ.
Max.
Units
-
-
10
uA
-
-
10
uA
IGES
Gate-Emitter Leakage Current
ICES
Collector-Emitter Leakage Current VCE=450V, VGE=0V
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=3.3V, ICP=130A (Pulsed)
-
3.8
6
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
-
-
1
V
Qg
Total Gate Charge
IC=40A
-
74
120
nC
Qge
Gate-Emitter Charge
VCE=360V
-
8
-
nC
Qgc
Gate-Collector Charge
VGE=4.5V
-
34
-
nC
td(on)
Turn-on Delay Time
VCC=200V
-
20
-
ns
tr
Rise Time
IC=15A
-
100
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
400
-
ns
tf
Fall Time
VGE=5V
-
3
-
µs
Cies
Input Capacitance
VGE=0V
-
3020
4830
pF
Coes
Output Capacitance
VCE=25V
-
220
-
pF
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
-
-
50
℃/W
Cres
RthJA
1
Thermal Resistance Junction-Ambient
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
201117031
AP28G45EM
140
240
o
IC , Collector Current (A)
IC , Collector Current (A)
5.0V
4.0V
T A =25 C
200
160
3.3V
120
2.0V
80
V G =1.0V
40
T A = 150 C
3.3 V
100
80
60
2.0V
40
V G =1.0V
20
0
0
0
2
4
6
8
10
12
0
1
Fig 1. Typical Output Characteristics
3
4
5
6
7
Fig 2. Typical Output Characteristics
240
9
V GE =4.0V
VCE(sat) ,Saturation Voltage(V)
V CE =6.0V
200
o
25 C
IC , Collector Current(A)
2
V CE , Collector-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V)
70 o C
160
125 o C
T A =150 o C
120
80
40
0
7
I C =130A
I C =120A
5
I C =100A
I C =50A
3
1
0
1
2
3
4
5
6
0
20
40
60
80
100
120
140
160
o
Junction Temperature ( C)
V GE , Gate-Emitter Voltage (V)
Fig 3. Collector Current v.s.
Gate-Emitter Voltage
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
1.2
10
VCE ,Collector-Emitter Voltage(V)
VGE(th) ,Gate Threshold Voltage (V)
5.0V
4.0V
o
120
1.0
0.8
0.6
0.4
0.2
0.0
o
T A =25 C
I C = 130 A
120A
100A
50A
8
6
4
2
0
-50
0
50
100
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
150
0
1
2
3
4
V GE , Gate-Emitter Voltage(V)
Fig 6. Collector Current v.s.
Gate-Emitter Voltage
5
6
AP28G45EM
f=1.0MHz
10000
160
o
C (pF)
1000
Coes
100
Cres
ICP , Peak Collector Current (A)
T A =25 C
Cies
10
120
80
40
0
1
5
9
13
17
21
25
29
0
2
4
6
8
V GE , Gate-to-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V))
Fig 7. Typical Capacitance Characterisitics
Fig 8. Maximum Pulse Collector Current
VCE
RC
90%
TO THE
OSCILLOSCOPE
C VCE
G
RG
VCC=200 V
10%
E
VGE
+
-
5V
VGE
td(on) tr
Fig 9. Switching Time Test Circuit
td(off) tf
Fig 10. Switching Time Waveform
VCE
TO THE
C
OSCILLOSCOPE
G
VCC=360V
VGE
E
+
1~3mA
-
IG
IC
VGE , Gate -Emitter Voltage (V)
12
I CP =40A
V CE =360V
10
8
6
4
2
0
0
40
80
120
160
Q G , Gate Charge (nC)
Fig 11. Gate Charge Test Circuit
Fig 12. Gate Charge Waveform
200