Data Sheet

TO
-22
0A
B
BUK95150-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
55
V
ID
drain current
Tmb = 25 °C
-
-
13
A
Ptot
total power dissipation
-
-
53
W
VGS = 10 V; ID = 13 A;
Tj = 25 °C
-
116
137
mΩ
VGS = 5 V; ID = 13 A;
Tj = 25 °C
-
125
150
mΩ
ID = 8 A; Vsup ≤ 25 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C;
unclamped
-
-
25
mJ
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
Simplified outline
Graphic symbol
D
mb
3
S
source
mb
D
mounting base; connected to drain
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
BUK95150-55A
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
55
V
VDGR
drain-gate voltage
RGS = 20 kΩ
-
55
V
VGS
gate-source voltage
ID
drain current
-10
10
V
Tmb = 25 °C
-
13
A
Tmb = 100 °C
-
9
A
-
53
A
IDM
peak drain current
Tmb = 25 °C; pulsed
Ptot
total power dissipation
Tmb = 25 °C
-
53
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
VGSM
peak gate-source voltage
pulsed; tp ≤ 50 µs
-15
15
V
Source-drain diode
IS
source current
Tmb = 25 °C
-
13
A
ISM
peak source current
pulsed; Tmb = 25 °C
-
53
A
ID = 8 A; Vsup ≤ 25 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
-
25
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
BUK95150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
2 of 12
BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aaf401
100
Pder
(%)
80
003aaf402
100
ID
(%)
80
60
60
40
40
20
20
0
0
0
40
80
120
160
200
Tmb (°C)
0
40
80
120
160
200
Tmb (°C)
VGS ≥ 5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
003aaf403
103
IDM
(A)
RDS(on) = VDS / ID
102
Fig 2.
D.C.
003aaf416
120
WDSS
(%)
100
80
tp = 1 μs
10
Normalized continuous drain current as a
function of mounting base temperature
10 μs
60
100 μs
40
1 ms
20
10 ms
1
1
0
102
10
20
Tmb = 25 °C; IDM is single pulse
Fig 3.
Product data sheet
100
140
180
ID = 75 A
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
BUK95150-55A
60
Tmb (°C)
VDS (V)
Fig 4.
Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
3 of 12
BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aaf417
102
IAS
(A)
25 °C
10
Tj prior to avalanche150 °C
1
10-3
10-2
10-1
1
10
tAV (ms)
unclamped inductive load
Fig 5.
Single-shot avalanche rating; avalanche current as a function of avalanche period
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-mb)
thermal resistance from junction to
mounting base
Rth(j-a)
thermal resistance from junction to
ambient
in free air
Min
Typ
Max
Unit
-
-
2.8
K/W
-
60
-
K/W
003aaf404
10
Zth(j-mb)
(K/W)
1
0.2
0.1
10-1
tp
P
T
0.05
0.02
0
t
tp
10-2
10-6
Fig 6.
T
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK95150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
4 of 12
BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
V
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
55
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
50
-
-
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C
1
1.5
2
V
ID = 1 mA; VDS = VGS; Tj = 175 °C
0.5
-
-
V
ID = 1 mA; VDS = VGS; Tj = -55 °C
-
-
2.3
V
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 55 V; VGS = 0 V; Tj = 25 °C
-
0.05
10
µA
VDS = 55 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 4.5 V; ID = 13 A; Tj = 25 °C
-
124
161
mΩ
VGS = 5 V; ID = 13 A; Tj = 175 °C
-
-
300
mΩ
VGS = 10 V; ID = 13 A; Tj = 25 °C
-
116
137
mΩ
VGS = 5 V; ID = 13 A; Tj = 25 °C
-
125
150
mΩ
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C
-
254
339
pF
-
54
65
pF
-
42
58
pF
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
6
6
ns
-
285
428
ns
turn-off delay time
-
1
1.4
ns
tf
fall time
-
18
25
ns
LD
internal drain inductance
from drain lead 6 mm from package
to centre of die ; Tj = 25 °C
-
4.5
-
nH
from contact screw on tab to centre
of die ; Tj = 25 °C
-
3.5
-
nH
from source lead to source bond
pad ; Tj = 25 °C
-
7.5
-
nH
IS = 53 A; VGS = 0 V; Tj = 25 °C
-
1.1
-
V
IS = 25 A; VGS = 0 V; Tj = 25 °C
-
0.85
1.2
V
IS = 53 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
-
24
-
ns
-
0.026
-
µC
td(on)
turn-on delay time
tr
rise time
td(off)
LS
internal source inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
BUK95150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aaf405
100
ID
(A)
80
VGS (V) = 10
7.5
7.0
6.5
6.0
RDS(on)
(mΩ)
5.5
35
5.0
4.8
4.4
60
3.8
40
3.4
VGS (V) =
4.0
30
3.0
3.2
3.4
3.6
4.0
5.0
3.6
3.2
25
3.0
20
2.8
2.6
2.4
0
20
0
2
4
6
8
10
VDS (V)
0
20
40
60
80
ID (A)
Tj = 25 °C
Fig 7.
003aaf406
40
Tj = 25 °C
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 8.
003aaf407
32
RDS(on)
(mΩ)
30
ID
(A)
Drain-source on-state resistance as a function
of drain current; typical values
003aaf408
70
60
50
28
40
26
30
Tj = 175 °C
Tj = 25 °C
20
24
10
0
22
3
5
7
9
11
0
1
2
3
4
5
VGS (V)
Tj = 25 °C; ID = 13 A
Fig 9.
6
7
VGS (V)
VDS > ID x RDSon
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aaf409
25
gfs
(S)
20
003aaf410
3.0
a
2.5
15
2.0
10
1.5
5
1.0
0
0
5
10
15
20
25
30
35
ID (A)
0.5
-100
0
100
200
Tmb (°C)
VDS > ID x RDSon
Fig 11. Forward transconductance as a function of
drain current; typical values
BUK95150-55A
Product data sheet
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
6 of 12
BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aaf411
2.5
VGS(th)
(V)
2.0
maximum
typical
1.5
10-3
minimum
1.0
2%
10-4
typical
98 %
10-5
0.5
10-6
0
-100
0
100
Tj (°C)
0
200
1
2
3
VGS (V)
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 13. Gate-source threshold voltage as a function of
junction temperature
2.5
C
(nF)
2.0
003aaf412
10-1
ID
(A)
10-2
Fig 14. Sub-threshold drain current as a function of
gate-source voltage
003aaf413
003aaf414
5
VGS
(V)
Ciss
4
VDS = 14 V
Coss
VDS = 44 V
3
1.5
Crss
1.0
2
0.5
1
0
10-2
10-1
1
0
102
10
0
5
10
15
20
QG (nC)
VDS (V)
VGS = 0 V; f = 1 MHz
Tj = 25 °C; ID = 25 A
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Gate-source voltage as a function of gate
charge; typical values
003aaf415
100
IF
(A)
80
60
Tj = 150 °C
40
Tj = 25 °C
20
0
0
0.5
1.0
1.5
2.0
VSDS (V)
VGS = 0 V
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK95150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78A
A
A1
p
q
mounting
base
D1
D
L2
L1(1)
Q
b1
L
1
2
3
c
b
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1(1)
L2
max.
p
q
Q
mm
4.5
4.1
1.39
1.27
0.9
0.6
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT78A
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
03-01-22
05-03-14
Fig 18. Package outline SOT78A (TO-220AB)
BUK95150-55A
Product data sheet
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Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK95150-55A v.2
20110421
Product data sheet
-
BUK95150_96150-55A v.1
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Type number BUK95150-55A separated from data sheet BUK95150_96150-55A v.1.
BUK95150_96150-55A v.1 20000201
BUK95150-55A
Product data sheet
Product specification
-
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
-
© NXP B.V. 2011. All rights reserved.
9 of 12
BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
9. Legal information
9.1
Data sheet status
Document status [1] [2]
Product status [3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
BUK95150-55A
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
10 of 12
BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK95150-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
11 of 12
BUK95150-55A
NXP Semiconductors
N-channel TrenchMOS logic level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 April 2011
Document identifier: BUK95150-55A