N-channel silicon field-effect transistors

3
SO
T2
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
Rev. 4 — 20 September 2011
Product data sheet
1. Product profile
1.1 General description
Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 Low noise
 Interchangeability of drain and source connections
 High gain.
1.3 Applications
 AM input stage in car radios
 VHF amplifiers
 Oscillators and mixers.
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
VDS
drain-source voltage
VGSoff
gate-source cut-off voltage
Conditions
Min
Typ
Max Unit
-
-
25
V
PMBFJ308
VDS = 10 V; ID = 1 A
1
-
6.5 V
PMBFJ309
VDS = 10 V; ID = 1 A
1
-
4
PMBFJ310
VDS = 10 V; ID = 1 A
2
-
6.5 V
V
PMBFJ308; PMBFJ309; PMBFJ310
NXP Semiconductors
N-channel silicon field-effect transistors
Table 1.
Quick reference data …continued
Symbol Parameter
IDSS
Conditions
Min
Typ
Max Unit
PMBFJ308
VGS = 0 V; VDS = 10 V
12
-
60
mA
PMBFJ309
VGS = 0 V; VDS = 10 V
12
-
30
mA
drain current
VGS = 0 V; VDS = 10 V
24
-
60
mA
Ptot
total power dissipation
up to Tamb = 25 C
-
-
250
mW
yfs
forward transfer admittance
VDS = 10 V; ID = 10 mA
10
-
-
mS
PMBFJ310
2. Pinning information
Table 2.
Discrete pinning[1]
Pin
Description
1
source
2
drain
3
gate
Simplified outline
3
3
2
1
sym060
1
[1]
Symbol
2
Drain and source are interchangeable.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMBFJ308
-
plastic surface mounted package; 3 leads
SOT23
PMBFJ309
PMBFJ310
4. Marking
Table 4.
Marking
Type number
Marking code[1]
PMBFJ308
48*
PMBFJ309
49*
PMBFJ310
50*
[1]
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
2 of 15
PMBFJ308; PMBFJ309; PMBFJ310
NXP Semiconductors
N-channel silicon field-effect transistors
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage (DC)
Min
Max
Unit
-
25
V
VGSO
gate-source voltage
open drain
-
25
V
VGDO
gate-drain voltage
open source
-
25
V
IG
forward gate current (DC)
-
50
mA
Ptot
total power dissipation
-
250
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
150
C
up to Tamb = 25 C
mbb688
400
Ptot
(mW)
300
200
100
0
0
Fig 1.
50
100
150
200
Tamb (°C)
Power derating curve.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance from junction to ambient
[1]
Conditions
[1]
Typ
Unit
500
K/W
Device mounted on an FR4 printed-circuit board.
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
3 of 15
NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
7. Static characteristics
Table 7.
Static characteristics
Tj = 25 C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
V(BR)GSS
gate-source breakdown voltage
IG = 1 A; VDS = 0 V
25
-
-
VGSoff
gate-source cut-off voltage
PMBFJ308
ID = 1 A; VDS = 10 V
1
-
6.5 V
PMBFJ309
ID = 1 A; VDS = 10 V
1
-
4
PMBFJ310
ID = 1 A; VDS = 10 V
2
-
6.5 V
IG = 1 mA; VDS = 0 V
-
-
1
V
PMBFJ308
VGS = 0 V; VDS = 10 V
12
-
60
mA
PMBFJ309
VGS = 0 V; VDS = 10 V
12
-
30
mA
VGSS
gate-source forward voltage
IDSS
drain-source leakage current
V
V
V
VGS = 0 V; VDS = 10 V
24
-
60
mA
IGSS
gate-source leakage current
VGS = 15 V; VDS = 0 V
-
-
1
nA
RDSon
drain-source on-state resistance
VGS = 0 V; VDS = 100 mV
-
50
-

yfs
forward transfer admittance
ID = 10 mA; VDS = 10 V
10
-
-
mS
yos
common source output admittance ID = 10 mA; VDS = 10 V
-
-
250
S
Min
Typ
Max Unit
-
3
5
PMBFJ310
8. Dynamic characteristics
Table 8.
Dynamic characteristics
Tj = 25 C; unless otherwise specified.
Symbol
Parameter
Conditions
Ciss
input capacitance
VDS = 10 V
VGS = 10 V; f = 1 MHz
VGS = 0 V; Tamb = 25 C
-
6
-
pF
-
1.3
2.5
pF
f = 100 MHz
-
200
-
S
f = 450 MHz
-
3
-
mS
f = 100 MHz
-
13
-
mS
f = 450 MHz
-
12
-
mS
f = 100 MHz
-
30
-
S
f = 450 MHz
-
450
-
S
Crss
reverse transfer capacitance
VDS = 0 V; VGS = 10 V; f = 1 MHz
gis
input conductance
VDS = 10 V; ID = 10 mA
gfs
grs
gos
Vn
transfer conductance
VDS = 10 V; ID = 10 mA
reverse conductance
VDS = 10 V; ID = 10 mA
output conductance
VDS = 10 V; ID = 10 mA
equivalent input noise voltage
PMBFJ308_309_310
Product data sheet
pF
f = 100 MHz
-
150
-
S
f = 450 MHz
-
400
-
S
-
6
-
nV/Hz
VDS = 10 V; ID = 10 mA; f = 100 Hz
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
4 of 15
PMBFJ308; PMBFJ309; PMBFJ310
NXP Semiconductors
N-channel silicon field-effect transistors
mcd220
50
IDSS
(mA)
40
yfs
(mS)
30
12
20
8
10
4
16
0
0
0
−1
−2
−3
VGSoff (V)
0
−4
VDS = 10 V; Tj = 25 C.
Fig 2.
mcd219
20
−2
−4
−6
−8
VGSoff (V)
VDS = 10 V; ID = 10 mA; Tj = 25 C.
Drain current as a function of gate-source
cut-off voltage; typical values.
Fig 3.
Forward transfer admittance as a function of
gate-source cut-off voltage; typical values.
mcd221
150
mcd222
80
RDSon
(Ω)
gos
(μS)
60
100
40
50
20
0
0
−1
−2
−3
0
−4
0
VGSoff (V)
VDS = 10 V; ID = 10 mA; Tj = 25 C.
Fig 4.
Product data sheet
−2
−3
−4
VGSoff (V)
VDS = 100 mV; VGS = 0 V; Tj = 25 C.
Common-source output conductance as a
function of gate-source cut-off voltage; typical
values.
PMBFJ308_309_310
−1
Fig 5.
Drain-source on-state resistance as a function
of gate-source cut-off voltage; typical values.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
PMBFJ308; PMBFJ309; PMBFJ310
NXP Semiconductors
N-channel silicon field-effect transistors
mcd216
16
ID
(mA)
mcd213
16
ID
(mA)
(1)
12
12
(2)
8
8
(3)
4
4
(4)
(5)
0
0
0
4
8
12
16
VDS (V)
Tj = 25 C.
−2
−1.5
−1
−0.5
0
VGS (V)
VDS = 10 V; Tj = 25 C.
(1) VGS = 0 V.
(2) VGS = 0.25 V.
(3) VGS = 0.5 V.
(4) VGS = 0.75 V.
(5) VGS = 1 V.
Fig 6.
Typical output characteristics; PMBFJ308.
Fig 7.
mcd218
20
ID
(mA)
16
mcd215
20
ID
(mA)
16
(1)
(2)
12
Typical transfer characteristics; PMBFJ308.
12
(3)
8
8
(4)
4
4
(5)
0
0
0
4
8
12
16
VDS (V)
Tj = 25 C.
−2
−1.5
−1
−0.5
0
VGS (V)
VDS = 10 V; Tj = 25 C.
(1) VGS = 0 V.
(2) VGS = 0.25 V.
(3) VGS = 0.5 V.
(4) VGS = 0.75 V.
(5) VGS = 1 V.
Fig 8.
Typical output characteristics; PMBFJ309.
PMBFJ308_309_310
Product data sheet
Fig 9.
Typical transfer characteristics; PMBFJ309.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
6 of 15
PMBFJ308; PMBFJ309; PMBFJ310
NXP Semiconductors
N-channel silicon field-effect transistors
mcd217
40
(1)
mcd214
40
ID
(mA)
ID
(mA)
30
30
(2)
20
(3)
20
(4)
10
10
(5)
(6)
0
0
0
4
8
12
16
−4
−3
−2
−1
VDS (V)
Tj = 25 C.
0
VGS (V)
VDS = 10 V; Tj = 25 C.
(1) VGS = 0 V.
(2) VGS = 0.5 V.
(3) VGS = 1 V.
(4) VGS = 1.5 V.
(5) VGS = 2 V.
(6) VGS = 2.5 V.
Fig 10. Typical output characteristics; PMBFJ310.
mcd224
4
Crs
(pF)
Fig 11. Typical transfer characteristics; PMBFJ310.
mcd223
10
Cis
(pF)
8
3
6
2
4
1
2
0
−10
−8
−6
−4
−2
0
VGS (V)
VDS = 10 V; Tj = 25 C.
Product data sheet
−8
−6
−4
−2
0
VGS (V)
VDS = 10 V; Tj = 25 C.
Fig 12. Reverse transfer capacitance as a function of
gate-source voltage; typical values.
PMBFJ308_309_310
0
−10
Fig 13. Input capacitance as a function of gate-source
voltage; typical values.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
7 of 15
NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
mcd229
103
ID
(μA)
102
10
1
10−1
10−2
10−3
−2.5
−2.0
−1.5
−1.0
−0.5
0
VGS (V)
VDS = 10 V; Tj = 25 C.
Fig 14. Drain current as a function of gate-source voltage; typical values.
mcd230
−104
IGSS
(pA)
−103
(1)
−102
(2)
−10
(3)
−1
(4)
−10−1
0
4
8
12
16
VDG (V)
Tj = 25 C.
(1) ID = 10 mA.
(2) ID = 1 mA.
(3) ID = 100 A.
(4) IGSS.
Fig 15. Gate current as a function of drain-gate voltage; typical values.
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
8 of 15
PMBFJ308; PMBFJ309; PMBFJ310
NXP Semiconductors
N-channel silicon field-effect transistors
mcd231
104
IGSS
(pA)
103
102
10
1
10−1
−25
25
75
125
175
Tj (°C)
Fig 16. Gate current as a function of junction temperature; typical values.
mcd228
102
gis, bis
(mS)
mcd227
102
gfs,−bfs
(mS)
10
bis
gfs
10
1
−bfs
gis
10−1
10
102
103
1
10
102
103
f (MHz)
f (MHz)
VDS = 10 V; ID = 10 mA; Tamb = 25 C.
VDS = 10 V; ID = 10 mA; Tamb = 25 C.
Fig 17. Input admittance; typical values.
PMBFJ308_309_310
Product data sheet
Fig 18. Forward transfer admittance; typical values.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
9 of 15
PMBFJ308; PMBFJ309; PMBFJ310
NXP Semiconductors
N-channel silicon field-effect transistors
mcd226
−102
brs, grs
(mS)
mcd225
102
bos, gos
(mS)
−10
10
brs
−1
bos
1
grs
−10−1
gos
−10−2
10
102
103
10−1
10
102
103
f (MHz)
f (MHz)
VDS = 10 V; ID = 10 mA; Tamb = 25 C.
VDS = 10 V; ID = 10 mA; Tamb = 25 C.
Fig 19. Reverse transfer admittance; typical values.
PMBFJ308_309_310
Product data sheet
Fig 20. Output admittance; typical values.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
10 of 15
PMBFJ308; PMBFJ309; PMBFJ310
NXP Semiconductors
N-channel silicon field-effect transistors
9. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 21. Package outline.
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
11 of 15
PMBFJ308; PMBFJ309; PMBFJ310
NXP Semiconductors
N-channel silicon field-effect transistors
10. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice Supersedes
PMBFJ308_309_310 v.4
20110920
Product data sheet
-
Modifications:
PMBFJ308_309_310 v.3
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Package outline drawings have been updated to the latest version.
PMBFJ308_309_310 v.3
(9397 750 13403)
20040723
Product data sheet
-
PMBFJ308_309_310 v.2
PMBFJ308_309_310 v.2
(9397 750 01141)
19960911
Product specification
-
-
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
12 of 15
NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
11.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
13 of 15
NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
14 of 15
NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 September 2011
Document identifier: PMBFJ308_309_310