Data Sheet

BUK956R1-100E
N-channel TrenchMOS logic level FET
11 September 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
1.3 Applications
• 12V, 24V and 48V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
-
-
120
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
349
W
VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
-
4.85
6.1
mΩ
VGS = 5 V; ID = 25 A; VDS = 80 V;
-
51
-
nC
[1]
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
D
mb
G
S
mbb076
1 2 3
TO-220AB (SOT78A)
3. Ordering information
Table 3.
Ordering information
Type number
Package
BUK956R1-100E
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78A
4. Marking
Table 4.
Marking codes
Type number
Marking code
BUK956R1-100E
BUK956R1-100E
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
RGS = 20 kΩ
-
100
V
VGS
gate-source voltage
Tj ≤ 175 °C; DC
-10
10
V
ID
drain current
Tj ≤ 175 °C; Pulsed
[1][2]
-15
15
V
Tmb = 25 °C; VGS = 5 V; Fig. 1
[3]
-
120
A
-
101
A
Tmb = 100 °C; VGS = 5 V; Fig. 1
BUK956R1-100E
Product data sheet
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
Symbol
Parameter
Conditions
Min
Max
Unit
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
-
576
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
349
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
-
120
A
-
576
A
-
387
mJ
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[3]
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω;
[4][5]
VGS = 5 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[1]
[2]
[3]
[4]
[5]
Accumulated pulse duration up to 50 hours delivers zero defect ppm
Significantly longer life times are achieved by lowering Tj and or VGS
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
003aai290
160
03aa16
120
ID
(A)
Pder
(%)
120
(1)
80
80
40
40
0
0
50
100
150
Tmb (° C)
0
200
(1) Capped at 120A due to package
Fig. 1.
Continuous drain current as a function of
mounting base temperature
BUK956R1-100E
Product data sheet
Fig. 2.
0
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aah029
103
IAL
(A)
102
(1)
10
(2)
1
(3)
10-1
10-3
Fig. 3.
10-2
10-1
1
tAL (ms)
10
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
ID
(A)
003aag369
103
Limit RDSon = VDS / ID
tp = 10 us
102
100 us
10
DC
1 ms
10 ms
100 ms
1
10-1
Fig. 4.
1
102
10
VDS (V)
103
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
0.43
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
-
60
-
K/W
BUK956R1-100E
Product data sheet
vertical in still air
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aaf570
1
Zth(j-mb)
(K/W)
= 0.5
0.2
10-1
0.1
0.05
tp
T
P
10-2
0.02
tp
single shot
10-3
10-6
Fig. 5.
10-5
10-4
10-3
10-2
t
T
10-1
1
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration.
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
90
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
1.4
1.7
2.1
V
-
-
2.45
V
0.5
-
-
V
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.05
1
µA
VDS = 100 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
-
4.85
6.1
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
4.7
5.9
mΩ
-
-
16.8
mΩ
Static characteristics
V(BR)DSS
VGS(th)
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Fig. 11
VGS = 5 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 11
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 80 V; VGS = 5 V;
-
133
-
nC
QGS
gate-source charge
Fig. 13; Fig. 14
-
23
-
nC
BUK956R1-100E
Product data sheet
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
Symbol
Parameter
Min
Typ
Max
Unit
QGD
gate-drain charge
-
51
-
nC
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
-
13100 17460 pF
Tj = 25 °C; Fig. 15
Coss
output capacitance
-
725
870
pF
Crss
reverse transfer
capacitance
-
450
620
pF
td(on)
turn-on delay time
VDS = 80 V; RL = 3.2 Ω; VGS = 5 V;
-
81
-
ns
tr
rise time
RG(ext) = 5 Ω
-
168
-
ns
td(off)
turn-off delay time
-
237
-
ns
tf
fall time
-
148
-
ns
LD
internal drain
inductance
from drain lead 6mm from package to
centre of die
-
4.5
-
nH
from upper edge of drain mounting
base to center of die
-
2.5
-
nH
from source lead to source bonding
pad
-
7.5
-
nH
LS
Conditions
internal source
inductance
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
0.77
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
70
-
ns
Qr
recovered charge
VDS = 25 V
-
202
-
nC
003aai279
300
ID
(A)
VGS (V) = 10
240
003aai280
10
5
RDSon
(mΩ )
3.5
7.5
3
180
5
2.8
120
2.6
2.5
60
2.4
0
2.2
0
0.5
1
0
1.5 V (V) 2
DS
Tj = 25 °C; tp = 300 μs
Fig. 6.
Fig. 7.
Output characteristics; drain current as a
function of drain-source voltage; typical values
BUK956R1-100E
Product data sheet
0
5
7.5
VGS (V)
10
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aag371
400
003aah025
3
VGS(th)
(V)
2.5
ID
(A)
max
300
2
typ
1.5
200
min
1
100
0
Fig. 8.
Tj = 175 ° C
0
Tj = 25 °C
2
4
0.5
VGS (V)
0
-60
6
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aah026
10-1
Fig. 9.
typ
120
Tj (° C)
180
Gate-source threshold voltage as a function of
junction temperature
003aai285
R DSon
(mΩ )
10-2
min
60
15
ID
(A)
10-3
0
2.4
2.6
2.8
3
10
max
3.5
10
-4
5
VGS (V) = 10
5
10-5
10-6
0
1
2
V GS (V)
0
3
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
BUK956R1-100E
Product data sheet
0
60
120
180
240 I (A) 300
D
Tj = 25 °C; tp = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aag818
3
VDS
a
ID
2.4
VGS(pl)
1.8
VGS(th)
VGS
1.2
QGS1
QGS2
QGS
0.6
QGD
QG(tot)
003aaa508
0
-60
0
60
120
Tj (°C)
Fig. 13. Gate charge waveform definitions
180
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aag377
10
003aag373
104
VGS
(V)
C
(pF)
8
Ciss
104
14 V
6
4
VDS = 80 V
103
Coss
2
Crss
0
0
100
200
Q G (nC)
102
10-1
300
Tj = 25 °C; ID = 25 A
Product data sheet
10
102
VDS (V)
103
VGS = 0 V; f = 1 MHz
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
BUK956R1-100E
1
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aag378
200
IS
(A)
150
100
50
Tj = 175 °C
0
0
0.3
Tj = 25 °C
0.6
0.9
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK956R1-100E
Product data sheet
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BUK956R1-100E
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N-channel TrenchMOS logic level FET
8. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78A
A
A1
p
q
mounting
base
D1
D
L2
L1(1)
Q
b1
L
1
2
3
b
e
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1(1)
L2
max.
p
q
Q
mm
4.5
4.1
1.39
1.27
0.9
0.6
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT78A
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
03-01-22
05-03-14
Fig. 17. Package outline TO-220AB (SOT78A)
BUK956R1-100E
Product data sheet
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
9. Legal information
9.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
9.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
BUK956R1-100E
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
9.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BUK956R1-100E
Product data sheet
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BUK956R1-100E
NXP Semiconductors
N-channel TrenchMOS logic level FET
10. Contents
1
1.1
1.2
1.3
1.4
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
2
Pinning information ............................................... 2
3
Ordering information ............................................. 2
4
Marking ................................................................... 2
5
Limiting values .......................................................2
6
Thermal characteristics .........................................4
7
Characteristics ....................................................... 5
8
Package outline ................................................... 10
9
9.1
9.2
9.3
9.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 September 2012
BUK956R1-100E
Product data sheet
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