UNISONIC TECHNOLOGIES CO., LTD 2N70-CB Preliminary Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 6.0Ω @ VGS = 10V , ID = 1.0 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N70L-TA3-T 2N70G-TA3-T 2N70L-TF1-T 2N70G-TF1-T 2N70L-TF1-T 2N70G-TF1-T 2N70L-TF3-T 2N70G-TF3-T 2N70L-TM3-T 2N70G-TM3-T 2N70L-TMS-T 2N70G-TMS-T 2N70L-TN3-R 2N70G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F1 TO-220F TO-251 TO-251S TO-252 1 G G G G G G G Pin Assignment 2 3 D S D S D S D S D S D S D S Packing Tube Tube Tube Tube Tube Tube Tape Reel 1 of 7 QW-R209-072.d 2N70-CB Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-072.d 2N70-CB Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous ID 2.0 A Drain Current Pulsed (Note 2) IDM 8.0 A Avalanche Current (Note 2) IAR 2.4 A Avalanche Energy Single Pulsed (Note 3) EAS 29 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.75 V/ns TO-220 45 W TO-220F/TO-220F1 28 W Power Dissipation PD TO-220F2 TO-251/TO-251S 30 W TO-252 Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=10mH, IAS=2.4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-251S TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-251S TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATING UNIT 62.5 °C/W 110 °C/W 2.78 °C/W 4.46 °C/W 4.17 °C/W θJA θJC 3 of 7 QW-R209-072.d 2N70-CB Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS =0V, VDS =25V, f =1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A Gate to Source Charge QGS IG=100μA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 1) tD (ON) VDS=30V, VGS=10V, ID=0.5A, Rise Time tR RG =25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Pulsed Current ISD Drain-Source Diode Forward Voltage (Note 1) ISM Maximum Body-Diode Continuous Current VSD VGS = 0 V, ISD = 2.0 A Body Diode Reverse Recovery Time (Note 1) trr VGS = 0V, IS = 2.0A, dIF / dt =100A/μs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 2.0 1 100 -100 V μA nA nA 4.0 6.0 V Ω 295 31 5 pF pF pF 28 1.6 1.4 36 24 86 27 nC nC nC ns ns ns ns 2.0 8.0 1.4 315 0.8 A A V nS μC 4 of 7 QW-R209-072.d 2N70-CB Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-072.d 2N70-CB Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS VGS 90% 10% tD(ON) tD(OFF) tF tR Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS QG 10V QGS QGD Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform E AS = Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 BVDSS LI 2 2 AS BVDSS - VDD Fig. 4B Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-072.d 2N70-CB Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-072.d