Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N70-CB
Preliminary
Power MOSFET
2A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N70-CB is a high voltage MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 6.0Ω @ VGS = 10V , ID = 1.0 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N70L-TA3-T
2N70G-TA3-T
2N70L-TF1-T
2N70G-TF1-T
2N70L-TF1-T
2N70G-TF1-T
2N70L-TF3-T
2N70G-TF3-T
2N70L-TM3-T
2N70G-TM3-T
2N70L-TMS-T
2N70G-TMS-T
2N70L-TN3-R
2N70G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F1
TO-220F
TO-251
TO-251S
TO-252
1
G
G
G
G
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
D
S
D
S
D
S
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
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2N70-CB

Preliminary
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2N70-CB

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
2.0
A
Drain Current
Pulsed (Note 2)
IDM
8.0
A
Avalanche Current (Note 2)
IAR
2.4
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
29
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.75
V/ns
TO-220
45
W
TO-220F/TO-220F1
28
W
Power Dissipation
PD
TO-220F2
TO-251/TO-251S
30
W
TO-252
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=2.4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-251S
TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-251S
TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATING
UNIT
62.5
°C/W
110
°C/W
2.78
°C/W
4.46
°C/W
4.17
°C/W
θJA
θJC
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2N70-CB

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS =0V, VDS =25V, f =1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A
Gate to Source Charge
QGS
IG=100μA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD (ON)
VDS=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG =25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Pulsed Current
ISD
Drain-Source Diode Forward Voltage (Note 1)
ISM
Maximum Body-Diode Continuous Current
VSD
VGS = 0 V, ISD = 2.0 A
Body Diode Reverse Recovery Time (Note 1)
trr
VGS = 0V, IS = 2.0A,
dIF / dt =100A/μs
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
700
2.0
1
100
-100
V
μA
nA
nA
4.0
6.0
V
Ω
295
31
5
pF
pF
pF
28
1.6
1.4
36
24
86
27
nC
nC
nC
ns
ns
ns
ns
2.0
8.0
1.4
315
0.8
A
A
V
nS
μC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
90%
10%
tD(ON)
tD(OFF)
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
E AS =
Fig. 4A Unclamped Inductive Switching Test Circuit
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1
BVDSS
LI 2
2 AS BVDSS - VDD
Fig. 4B Unclamped Inductive Switching Waveforms
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2N70-CB
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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