Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT100N75H
Preliminary
POWER MOSFET
100A, 75V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT100N75H is an N-channel Power MOSFET, it
uses UTC’s advanced technology to provide excellent RDS(On) with
low gate charge, etc.
The UTC UTT100N75H is suitable for DC motor control, UPS
and load switching, etc.

FEATURES
* RDS(ON) < 8.0 mΩ @ VGS=10V, ID=50A
* High power and current handling capability
* High speed switching
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT100N75HL-TA3-T
UTT100N75HG-TA3-T
UTT100N75HL-TN3-R
UTT100N75HG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
MARKING
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (TA =25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
RATINGS
UNIT
75
V
±20
V
TC=25°C
100
A
Continuous
ID
Drain Current
TC=100°C
48
A
400
A
Pulsed (Note 2)
IDM
Peak diode recovery voltage
dv/dt
3.86
V/ns
Avalanche Energy (Note 3)
EAS
162
mJ
TO-220
83
W
TC=25°C
TO-252
140
W
Power Dissipation
PD
TO-220
0.664
W/°C
Derate above 25°C
TO-252
0.95
W/°C
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.5mH, IAS=25.2A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤30A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
Drain-Source Voltage
Gate-Source Voltage

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
steady state
Junction to Case
steady state
SYMBOL
TO-220
TO-252
TO-220
TO-252
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
RATINGS
62.5
110
1.5
1.05
UNIT
°C/W
°C/W
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=75V, VGS=0V,TC=25°C
VDS=75V, VGS=0V,TC=125°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=50A
Forward Transconductance
gFS
VDD=5V, ID=30A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate to Source Charge
QGS
ID=100µA
Gate to Drain Charge
QGD
Turn-on Delay Time
tD(ON)
VDD=30V, VGS=10V, RL=60Ω,
Rise Time
tR
RG=2.5Ω, ID=0.5A
Turn-off Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Drain-Source Diode Forward
IS
Current
Pulsed Drain-Source Diode Forward Current
ISD
Drain-Source Diode Forward Voltage
VSD
IS=100A, VGS=0V
(Note 1)
Body Diode Reverse Recovery Time
tRR
(Note 1)
IS=30A, dIS/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
(Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
MAX UNIT
75
1
10
+100
-100
2.0
4.0
8.0
V
µA
µA
nA
nA
60
V
mΩ
S
414
270
132
pF
pF
pF
105
18
21
160
125
328
127
nC
nC
nC
ns
ns
ns
ns
100
A
400
A
1.2
V
47
ns
42
nC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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