UNISONIC TECHNOLOGIES CO., LTD 9NM65 Preliminary Power MOSFET 9.0A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 9NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. FEATURES * RDS(ON) < 0.6Ω @ VGS=10V, ID=4.5A * High switching Speed * 100% avalanche tested * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Note: Lead Free 9NM65L-TA3-T 9NM65L-TF1-T 9NM65L-TF2-T 9NM65L-TF3-T 9NM65L-TM3-R 9NM65L-TN3-R Pin Assignment: G: Gate Halogen Free 9NM65G-TA3-T 9NM65G-TF1-T 9NM65G-TF2-T 9NM65G-TF3-T 9NM65G-TM3-R 9NM65G-TN3-R D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R205-082.b 9NM65 Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-082.b 9NM65 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL VDSS VGSS ID IDM IAR EAS dv/dt RATINGS UNIT 650 V ±30 V Continuous 9 A Drain Current (TC=25°C) 36 A Pulsed (Note 2) Avalanche Current 2.8 A Avalanche Energy Single Pulsed (Note 3) 39 mJ Peak Diode Recovery dv/dt (Note 4) 5.8 V/ns TO-220 167 W TO-220F/TO-220F1 44 W Power Dissipation PD TO-220F2 49 W TO-251/TO-252 110 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=10mH, IAS=2.8A, VDD=50V, RG=25Ω, Starting TJ=25°C. 4. ISD ≤ 9A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ=25°C. Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/TO-220F TO-220F1/TO-220F2 TO-251/TO-252 TO-220 TO-220F/TO-220F1 TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATING UNIT 62.5 °C/W 110 0.75 2.84 2.55 1.14 °C/W °C/W °C/W °C/W °C/W 3 of 7 QW-R205-082.b 9NM65 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V Forward VGS=+30V Gate- Source Leakage Current IGSS Reverse VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG VDS=50V, VGS=10V, ID=1.3A , Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR VDD=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current (Note 1) ISM Drain-Source Diode Forward Voltage (Note 2) VSD IS=9.0A, VGS=0V Reverse Recovery Time trr IS=9.0A, VGS=0V, dIF/dt = 100 A/μs Reverse Recovery Charge (Note 1) Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 V 10 µA +100 nA -100 nA 2.5 4.5 0.6 V Ω 550 375 28 pF pF pF 42 5 15 49 86 195 65 nC nC nC ns ns ns ns 9.0 3.6 1.4 320 3.9 A A V ns μC 4 of 7 QW-R205-082.b 9NM65 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-082.b 9NM65 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-082.b 9NM65 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-082.b