RF power product selection guide LDMOS & GaN transistors and ICs www.infineon.com/rfpower RF power product selection guide New products GTVA126001FC 1200–1400 MHz Typical pulsed CW performance @ 1300 MHz –– P3dB = 610 W –– Gain = 18 dB –– Efficiency = 70% –– Pulse = 300 µs, 10% DC H-37248-2 GTVA123501FA 1200–1400 MHz Typical pulsed CW performance @1300 MHz –– P3dB = 370 W –– Gain = 18 dB –– Efficiency = 72% –– Pulse = 300 µs, 10% DC H-37265J-2 GTVA261701FA 2620–2690 MHz Typical single-carrier WCDMA performance –– P1dB = 170 W avg –– Gain = 17 dB –– Efficiency = 43% H-37265J-2 ›› ›› ›› ›› ›› ›› For additional information contact us at [email protected], and on the web at www.infineon.com/rfpower. Cellular infrastructure LDMOS RF power transistors [400 MHz to 2700 MHz] Product Operating frequency [MHz] Matching P1dB typ [W] Gain typ [dB] Eff typ [%] POUT avg [W] Test signal Supply voltage typ [V] RqJC [°C/W] Package type 420 MHz to 960 MHz PTFB072707FH 728–768 I/O 270 18.5 39.0 60 WCDMA 28 0.17 H-34288-4/2 PTFA080551E 869–960 I 75 18.0 44.0 26 EDGE 28 0.80 H-36265-2 PTFA080551F 869–960 I 75 18.0 44.0 26 EDGE 28 0.80 H-37265-2 PTFB090901EA 920–960 I/O 90 19.5 40.0 25 WCDMA 28 0.73 H-36265-2 PTFB090901FA 920–960 I/O 90 19.5 40.0 25 WCDMA 28 0.73 H-37265-2 PTFA091201E 920–960 I/O 135 19.0 44.0 50 EDGE 28 0.41 H-36248-2 PTFB091507FH 920–960 I/O 150 20.0 38.0 50 WCDMA 28 0.31 H-34288-4/2 PTFB091802FC 920–960 I/O 180 19.5 34.0 55 WCDMA 28 0.38 H-37248-4 PTFA092201E 920–960 I/O 250 18.5 30.0 55 WCDMA 30 0.25 H-36260-2 PTFB092707FH 925–960 I/O 270 19.5 33.0 63 WCDMA 28 0.21 H-37288L-4/2 NEW PTRA093302FC 746–768 I 330 17.3 51.6 79 WCDMA 50 0.56 H-37248-4 PTFB093608FV 920–960 I/O 2x180 20.0 34.0 112 WCDMA 28 0.12 H-34275G-6/2 1800 MHz to 2000 MHz PXAC180602MD 1805–1880 I/O 60 17.7 54.5 8.9 WCDMA 28 2.40 PG-HB1DSO-4 NEW PXAD182002ND 1805–1880 I/O 100 16.5 46.0 27.5 WCDMA 28 TBD PG-HB1DSO-4 PXFC191507FC 1805–1990 I/O 150 20.5 31.0 32 WCDMA 28 0.43 H-37248G-4/2 PTFB181702FC 1805–1880 I/O 180 19.0 26.0 30 WCDMA 28 0.27 H-37248-4 PXAC182002FC 1805–1880 I/O 180 16.7 51.5 28.2 WCDMA 28 1.09/0.59 H-37248-4 PTAB182002FC 1805–1880 I/O 70+120 15.5 44.0 29 WCDMA 28 0.86/0.64 H-37248-4 PXFC192207FH 1805–1990 I/O 220 20.0 29.0 50 WCDMA 28 0.28 H-37288G-4/2 PXFC192207SH 1805–1990 I/O 220 20.0 30.5 50 WCDMA 28 0.28 H-37288G-4/2 PXFC192207NF 1805–1990 I/O 220 18.7 30.3 50 WCDMA 28 0.18 PG-HBSOF-4 PTFB182503EL 1805–1880 I/O 240 19.0 28.0 50 WCDMA 30 0.26 H-33288-6 PTFB182503FL 1805–1880 I/O 240 19.0 28.0 50 WCDMA 30 0.26 H-34288-4/2 PTFB192503EL 1930–1990 I/O 240 19.0 28.0 50 WCDMA 30 0.26 H-33288-6 PTFB192503FL 1930–1990 I/O 240 19.0 28.0 50 WCDMA 30 0.26 H-34288-4/2 Cellular infrastructure LDMOS RF power transistors [400 MHz to 2700 MHz] (continued) Product Operating frequency [MHz] Matching P1dB typ [W] Gain typ [dB] Eff typ [%] POUT avg [W] Test signal Supply voltage typ [V] RqJC [°C/W] Package type 1800 MHz to 2000 MHz PXAC182908FV 1805–1880 I/O 240 15.0 51.0 70 WCDMA 28 PXAC192908FV 1930–1995 I/O 240 14.0 49.0 70 WCDMA 28 0.56/0.29 H-37275G-6/2 0.32 H-37275G-6/2 PTFB182557SH 1805–1880 I/O 250 19.0 32.5 60 WCDMA 28 0.23 H-34288G-4/2 PTFB183404E 1805–1880 I/O 340 17.0 25.5 80 WCDMA 30 0.20 H-36275-8 PTFB183408SV 1805–1880 I/O 340 17.0 25.5 80 WCDMA 30 0.20 H-37275G-6/2 2000 MHz to 2200 MHz PTFC210202FC 2110–2170 I/O 2x12 21.0 29.0 5 WCDMA 28 2.20 H-37248-4 NEW PXAC210552FC 1805-2170 I/O 55 17.2 49.0 8 WCDMA 28 1.44 H-37248-4 NEW PXAC210552MD 1800–2200 I/O 55 17.1 47.3 8.5 WCDMA 27 TBD HB1DSO-4 PTAC210802FC 2110–2170 I/O 19+60 17.0 43.0 5 WCDMA 28 2.50/0.80 H-37248-4 PTFB210801FA 2110–2170 I/O 80 18.5 31.0 20 WCDMA 28 NEW PXAC200902FC 1805-2170 I/O 90 17.2 50.3 15 WCDMA 28 0.50 H-37265-2 PXAC201202FC 1800–2200 I/O 35+80 16.7 46.0 16 WCDMA 28 0.50 H-37248-4 PXAC201602FC 1880–2025 I/O 55+85 17.7 44.0 22 WCDMA 28 0.48 H-37248-4 PTFB201402FC 2010–2025 I/O 2x70 17.0 36.0 20 WCDMA 28 0.39 H-37248-4 PTFB211501E 2110–2170 I/O 150 18.0 32.0 40 WCDMA 30 0.29 H-36248-2 PTFB211501F 2110–2170 I/O 150 18.0 32.0 40 WCDMA 30 0.29 H-37248-2 PTFB211503EL 2110–2170 I/O 150 18.0 29.0 32 WCDMA 30 0.27 H-33288-6 PTFB211503FL 2110–2170 I/O 150 18.0 29.0 32 WCDMA 30 0.27 H-34288-4/2 PXFC211507SC 2110–2170 I/O 150 20.4 32.9 32 WCDMA 28 0.56 H-37248G-4/2 PTFB211803EL 2110–2170 I/O 180 17.5 29.5 40 WCDMA 30 0.30 H-33288-6 PTFB211803FL 2110–2170 I/O 180 17.5 29.5 40 WCDMA 30 0.30 H-34288-4/2 PTFB212507SH 2110–2170 I/O 200 18.0 26.0 50 WCDMA 28 0.26 H-34288G-4/2 PTFB212503EL 2110–2170 I/O 240 18.0 31.0 55 WCDMA 30 0.26 H-33288-6 PTFB212503FL 2110–2170 I/O 240 18.0 31.0 55 WCDMA 30 0.26 H-34288-4/2 PXFC212551SC 2110–2170 I/O 240 20.0 28.0 50 WCDMA 28 0.32 H-37248H-2 PTFB213004F 2110–2170 I/O 300 18.0 26.5 60 WCDMA 30 0.23 H-37275-6/2 PTFB213208FV 2110–2170 I/O 2x160 17.0 33.0 50 WCDMA 28 0.21 H-37275-6/2 PTFB213208SV 2110–2170 I/O 2x160 17.0 33.0 50 WCDMA 28 0.21 H-37275G-6/2 NEW PXAC213308FV 2110–2200 I/O 320 16.5 43.5 55 WCDMA 28 0.50/0.24 H-37275G-6/2 PXAC203302FV 1880–2025 I/O 330 16.5 49.0 56 WCDMA 28 0.62/0.35 H-37275-4 1.75/0.76 H-37248-4 2300 MHz to 2400 MHz PTAC240502FC 2300–2400 I 17+33 14.3 44.0 10 WCDMA 28 1.29 H-37248-4 PXAC241702FC 2300–2400 I/O 60+90 16.5 52.0 28 WCDMA 28 0.53 H-37248-4 PTFB241402F 2300–2400 I/O 2x70 17.0 37.0 110 (PEP) Twotone 30 0.38 H-37248-4 PXAC243502FV 2300–2400 I/O 150+200 15.5 44.0 68 WCDMA 28 0.22 H-37275-4 2.20 H-37248-4 2500 MHz to 2700 MHz PTFC260202FC 2495–2690 I/O 2x12 20.0 30.0 5 WCDMA 28 PTAC260302FC 2620–2690 I/O 12+17 15.5 45.0 5.5 WCDMA 28 PTFC260362SC 2496–2690 I/O 2x17 18.6 30.0 8 WCDMA 28 PXAC260602FC 2620–2690 I/O 15+50 15.7 39.0 5 WCDMA 28 4.10/2.00 H-37248-4 PXAC260622SC 2496–2690 I/O 75 15.8 44.7 8.9 WCDMA 28 0.97/0.50 H-37248H-4 PXAC261002FC 2496–2690 I/O 40+70 15.6 46.0 18 WCDMA 28 0.60 H-37248-4 PXAC261212FC 2496–2690 I/O 50+75 15.0 48.0 28 WCDMA 28 0.61 H-37248-4 PTFC261402FC 2620–2690 I/O 140 18.0 25.0 5 WCDMA 28 0.30 H-37248-4 PTFC262157FH 2620–2690 I/O 200 19.5 29.0 50 WCDMA 28 0.34 H-34288G-4/2 PTFC262157SH 2620–2690 I/O 200 19.5 29.0 50 WCDMA 28 0.34 H-34288G-4/2 PTFC262808FV 2620–2690 I/O 280 18.0 24.0 56 WCDMA 28 0.20 H-37275G-6/2 1.50/1.70 H-37248H-4 2.51 H-37248H-4 Cellular infrastructure GaN RF transistors [1800 MHz to 2700 MHz] Product Operating frequency [MHz] Matching P1dB typ [W] Gain typ [dB] Eff typ [%] POUT avg [W] Test signal Supply voltage typ [V] [°C/W] I 70 @P3dB 22.0 27.0 6.3 LTE 50 2.36 H-37265J-2 RqJC Package type 1800 MHz – 2200 MHz NEW GTVA220701FA 1805–2170 2500 MHz – 2700 MHz NEW GTVA261701FA 2620–2690 I 170 @P3dB 17.0 43.0 40 WCDMA 50 1.07 H-37265J-2 NEW GTVA263202FC 2620–2690 I 340 @P3dB 18.0 40.0 100 WCDMA 48 TBD H-37265J-2 General purpose LDMOS RF transistors [700 MHz to 2200 MHz] PTFA220041M 700–2200 No 5 19.0 37.5 4 (PEP) Two-tone 28 5.50 SON-10 PTFA220121M 700–2200 No 15 16.0 37.0 9 (PEP) Two-tone 28 3.40 SON-10 PTFC270051M 900–2700 No 7.3 20.0 60.0 – CW@2170 28 3.84 SON-10 PTFC270101M 900–2700 No 12 20.0 60.0 – CW@2140 28 4.04 SON-10 PTVA120121M 500–1400 No 12 21.0 65.0 15 CW 50 4.97 SON-10 PTVA120252MT 500–1400 No 25 20.8 33.0 5.5 CW 50 2.6 SON-16 LDMOS integrated RF power amplifiers [700 MHz to 2200 MHz] PTMA080152M 700–1000 I 20 30.0 34.0 8 GSM/EDGE 28 8.50/2.50 DSO-20-63 PTMA180402M 1800–2200 I 40 30.0 16.0 5 CDMA 28 3.60/1.50 DSO-20-63 NEW PTMA210152M 1800–2200 I 20 28.5 33.0 7 WCDMA 28 10.70/2.90 DSO-20-63 I/O 10+10 30.5 19.0 2.5 WCDMA 28 9.70/3.10 HB1DSO-14 NEW PTMC210204MD 1805–2200 UHF and L-Band LDMOS RF power transistors [400 MHz to 1400 MHz] PTVA030121EA 390–450 No 12 25.0 69.0 – Pulsed 50 6.50 H-36265-2 PTVA035002EV 390–450 No 400 19.5 65.0 – Pulsed 50 0.20 H-36275-4 PTVA042502EC 470–806 I 250 19.0 25.5 55 DVB-T 50 0.47 H-36248-4 PTVA042502FC 470–806 I 250 19.0 25.5 55 DVB-T 50 0.47 H-37248-4 PTVA043502EC 470–860 I/O 350 18.0 29.5 70 DVB-T 50 TBD H-36248-4 PTVA043502FC 470–860 I/O 350 18.0 29.5 70 DVB-T 50 TBD H-37248-4 PTVA047002EV 470–806 I 700 17.5 29.0 130 DVB-T 50 0.22 H-36275-4 PTVA104501EH 960–1215 I/O 450 17.0 57.0 – Pulsed 50 0.34 H-36288-2 PTVA102001EA 1030/1090 I/O 200 18.0 57.0 – Pulsed 50 TBD H-36265-2 PTVA101K02EV 1030/1090 I 920 18.0 56.0 – Pulsed 50 0.15 H-36275-4 PTVA120251EA 500–1400 No 30 16.0 56.0 – Pulsed 50 3.70 H-36265-2 NEW PTVA120252MT 500–1400 No 25 20.8 33.0 5.5 CW 50 2.6 PG-SON-16 PTVA120501EA 1200–1400 I 54 16.5 55.0 – Pulsed 50 3.70 H-36265-2 PTVA123501EC 1200–1400 I/O 375 17.0 55.0 – Pulsed 50 0.34 H-36248-2 PTVA123501FC 1200–1400 I/O 375 17.0 55.0 – Pulsed 50 0.34 H-37248-2 PTVA127002EV 1200–1400 I/O 700 16.0 56.0 – Pulsed 50 0.34 H-36275-4 L-Band GaN RF transistors [960 MHz to 1400 MHz] NEW GTVA104001FA 960–1215 I 410 @P3dB 18.5 70.0 – Pulsed 50 TBD H-37265J-2 NEW GTVA107001FC 960–1215 I 750 @P3dB 17.0 70.0 – Pulsed 50 TBD H-37248-2 NEW GTVA126001FC 1200–1400 I 610 @P3dB 18.0 70.0 – Pulsed 50 TBD H-37248-2 NEW GTVA123501FA 1200–1400 I 370 @P3dB 18.0 72.0 – Pulsed 50 TBD H-37265J-2 Packages Thermally-enhanced open-cavity ceramic H-36248-2 H-37248-2 H-36248-4 H-37248-4 H-37248H-4 H-37248H-4 or H-44248H-4 or H-49248H-4 (formed leads) H-37248G-4/2 H-33265-8 H-34265-8 H-36265-2 H-37265-2 or H-37265J-2 H-36260-2 H-37260-2 H-33288-2 H-34288-2 H-34288G-4/2 or H-37288G-4/2 or H-37288L-4/2 H-34288G-4/2 or H-37288G-4/2 (formed leads) H-33288-6 H-34288-4/2 H-36275-4 H-37275-4 H-37275-6/2 H-34275G-6/2 or H-37275G-6/2 H-34275G-6/2 or H-37275G-6/2 (formed leads) Molded plastic DSO-20-63 SON-10 HBSOF-4 HB1DSO-4 Where to buy Infineon distribution partners and sales offices: www.infineon.com/WhereToBuy Service hotline Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and 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Please visit www.infineon.com/service for your country! Mobile product catalog Mobile app for iOS and Android. Published by Infineon Technologies AG 81726 Munich, Germany © 2016 Infineon Technologies AG. All Rights Reserved. Order number: B154-I0022-V5-7600-AP-EC-P Date: 05 / 2016 www.infineon.com