RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 (TA49067) are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<55ns These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Planar Construction • Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated Applications • Switching Power Supplies • Power Switching Circuits Ordering Information • General Purpose PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND RHRU7540 TO-218 RHRU7540 RHRU7550 TO-218 RHRU7550 RHRU7560 TO-218 RHRU7560 Package SINGLE LEAD JEDEC STYLE TO-218 ANODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +80oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ 1 RHRU7540 400 400 400 75 RHRU7550 500 500 500 75 RHRU7560 600 600 600 75 UNITS V V V A 150 150 150 A 750 750 750 A 190 50 -65 to +175 190 50 -65 to +175 190 50 -65 to +175 W mj oC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 RHRU7540, RHRU7550, RHRU7560 Electrical Specifications TC = +25oC, Unless Otherwise Specified RHRU7540 SYMBOL TEST CONDITION RHRU7550 RHRU7560 MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS IF = 75A, TC = +25oC - - 2.1 - - 2.1 - - 2.1 V IF = 75A, TC = +150oC - - 1.7 - - 1.7 - - 1.7 V VR = 400V, TC = +25oC - - 500 - - - - - - µA VR = 500V, TC = +25oC - - - - - 500 - - - µA VR = 600V, TC = +25oC - - - - - - - - 500 µA VR = 400V, TC = +150oC - - 2.0 - - - - - - mA VR = 500V, TC = +150oC - - - - - 2.0 - - - mA VR = 600V, TC = +150oC - - - - - - - - 2.0 mA IF = 1A, dIF/dt = 100A/µs - - 55 - - 55 - - 55 ns IF = 75A, dIF/dt = 100A/µs - - 60 - - 60 - - 60 ns tA IF = 75A, dIF/dt = 100A/µs - 35 - - 35 - - 35 - ns tB IF = 75A, dIF/dt = 100A/µs - 18 - - 18 - - 18 - ns QRR IF = 75A, dIF/dt = 100A/µs - 90 - - 90 - - 90 - nC VR = 10V, IF = 0A - 200 - - 200 - - 200 - pF 0.8 oC/W VF IR IR tRR CJ RθJC - - 0.8 - - 0.8 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt R1 L1 = SELF INDUCTANCE OF R4 + LLOOP +V3 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) £ R4 10 Q2 Q1 +V1 0 LLOOP t2 R2 t1 IF dIF dt tRR tA tB 0 DUT 0.25 IRM Q4 IRM t3 C1 0 VR R4 Q3 -V2 -V4 R3 VRM FIGURE 1. tRR TEST CIRCUIT 2 FIGURE 2. tRR WAVEFORMS AND DEFINITIONS RHRU7540, RHRU7550, RHRU7560 Typical Performance Curves 300 5000 +175oC IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 1000 100 +100oC +175oC +25oC 10 1 0.5 1.0 1.5 2.0 VF, FORWARD VOLTAGE (V) 2.5 1 +25oC 0.1 0 tRR 40 tA 30 20 100 200 300 400 VR , REVERSE VOLTAGE (V) 500 600 FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE tB TC = +100oC 150 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 50 125 tRR 100 tA 75 50 tB 25 10 0 1 10 IF, FORWARD CURRENT (A) IF(AV) , AVERAGE FORWARD CURRENT (A) 200 150 tRR 100 tA 50 tB 10 1 IF, FORWARD CURRENT (A) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC 3 75 FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC TC = +175oC 250 10 IF, FORWARD CURRENT (A) 1 75 FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC t, RECOVERY TIMES (ns) 10 3.0 TC = +25oC 60 0 +100oC 0.01 0 FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 0 100 75 75 DC 60 SQ. WAVE 45 30 15 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES RHRU7540, RHRU7550, RHRU7560 Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 600 500 400 300 200 100 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuit and Waveforms IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L 130Ω R + VDD 1MΩ DUT 12V VAVL Q2 130Ω CURRENT SENSE IL IL I V VDD 12V t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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