Data Sheet

PBSS301NZ
12 V, 5.8 A NPN low VCEsat (BISS) transistor
Rev. 02 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS301PZ.
1.2 Features
„
„
„
„
„
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„
„
„
„
„
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
12
V
-
-
5.8
A
-
-
11.6
A
-
30
43
mΩ
VCEO
collector-emitter voltage
IC
collector current
ICM
peak collector current
single pulse;
tp ≤ 1 ms
RCEsat
collector-emitter
saturation resistance
IC = 4 A;
IB = 200 mA
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[1]
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
collector
3
emitter
4
collector
Simplified outline
Symbol
4
2, 4
1
1
2
3
3
sym016
3. Ordering information
Table 3.
Ordering information
Type number
PBSS301NZ
Package
Name
Description
Version
SC-73
plastic surface-mounted package with increased heat SOT223
sink; 4 leads
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS301NZ
S301NZ
PBSS301NZ_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
2 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
12
V
VCEO
collector-emitter voltage
open base
-
12
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
5.8
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
11.6
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
0.7
W
[2]
-
1.7
W
[3]
-
2
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa560
2.5
Ptot
(W)
2.0
(1)
(2)
1.5
1.0
(3)
0.5
0
−75
−25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS301NZ_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
3 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from
junction to ambient
Rth(j-a)
in free air
Min
Typ
Max
Unit
[1]
-
-
179
K/W
[2]
-
-
74
K/W
[3]
-
-
63
K/W
-
-
15
K/W
thermal resistance from
junction to solder point
Rth(j-sp)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa561
103
Zth(j-a)
(K/W)
δ=1
0.75
102
0.50
0.33
0.20
0.10
0.05
10
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS301NZ_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
4 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
006aaa562
102
δ=1
0.75
Zth(j-a)
(K/W)
0.50
0.20
10
0.33
0.10
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa563
102
δ=1
0.75
Zth(j-a)
(K/W)
0.50
0.20
0.33
10
0.10
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS301NZ_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
5 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Min
Typ
Max
Unit
collector-base cut-off VCB = 12 V; IE = 0 A
current
VCB = 12 V; IE = 0 A;
Tj = 150 °C
-
-
100
nA
-
-
50
μA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 2 V; IC = 0.5 A
[1]
300
530
-
VCE = 2 V; IC = 1 A
[1]
300
520
-
VCE = 2 V; IC = 2 A
[1]
250
480
-
VCE = 2 V; IC = 4 A
[1]
200
420
-
VCE = 2 V; IC = 7 A
[1]
200
290
-
IC = 0.5 A; IB = 50 mA
[1]
-
18
25
mV
IC = 1 A; IB = 50 mA
[1]
-
35
50
mV
IC = 1 A; IB = 10 mA
[1]
-
50
70
mV
IC = 2 A; IB = 40 mA
[1]
-
70
100
mV
IC = 4 A; IB = 200 mA
[1]
-
120
170
mV
IC = 4 A; IB = 400 mA
[1]
-
115
165
mV
IC = 4 A; IB = 40 mA
[1]
-
135
210
mV
IC = 5.8 A; IB = 290 mA
[1]
-
165
235
mV
collector-emitter
IC = 4 A; IB = 200 mA
saturation resistance I = 4 A; I = 40 mA
C
B
[1]
-
30
43
mΩ
[1]
-
35
52
mΩ
base-emitter
saturation voltage
IC = 1 A; IB = 100 mA
[1]
-
0.81
0.9
V
IC = 4 A; IB = 400 mA
[1]
-
0.92
1.05
V
[1]
-
0.75
0.85
V
-
15
-
ns
-
40
-
ns
-
55
-
ns
-
195
-
ns
ICBO
VCEsat
RCEsat
VBEsat
Conditions
collector-emitter
saturation voltage
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A
td
delay time
tr
rise time
ton
turn-on time
VCC = 12.5 V; IC = 3 A;
IBon = 0.15 A;
IBoff = −0.15 A
ts
storage time
tf
fall time
-
75
-
ns
toff
turn-off time
-
270
-
ns
fT
transition frequency
VCE = 10 V; IC = 100 mA;
f = 100 MHz
-
140
-
MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
125
160
pF
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS301NZ_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
6 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
006aaa564
1000
hFE
800
(1)
006aaa570
14
IC
(A)
12
IB (mA) = 50
45
40
35
30
25
10
600
(2)
8
20
15
6
400
10
(3)
4
5
200
2
0
10−1
1
10
102
0
103
104
IC (mA)
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5.
DC current gain as a function of collector
current; typical values
Fig 6.
006aaa565
1.2
VBE
(V)
Collector current as a function of
collector-emitter voltage; typical values
006aaa568
1.2
VBEsat
(V)
0.8
0.8
(1)
(1)
(2)
(2)
0.4
0.4
(3)
(3)
0
10−1
1
10
102
0
10−1
103
104
IC (mA)
1
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7.
102
103
104
IC (mA)
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
Fig 8.
Base-emitter saturation voltage as a function
of collector current; typical values
PBSS301NZ_2
Product data sheet
10
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
7 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
006aaa566
1
006aaa567
1
VCEsat
(V)
VCEsat
(V)
10−1
10−1
(1)
(2)
(3)
(1)
10−2
10−2
10−3
10−1
10−3
10−1
(2)
(3)
1
10
102
103
104
IC (mA)
1
102
103
104
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
Fig 9.
10
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa569
102
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa571
103
RCEsat
(Ω)
RCEsat
(Ω)
102
(1)
10
(2)
10
(3)
1
1
(1)
(2)
(3)
10−1
10−2
10−1
1
10
102
10−1
103
104
IC (mA)
10−2
10−1
1
102
103
104
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS301NZ_2
Product data sheet
10
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
8 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
8. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig 13. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mlb826
VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = −0.15 A
Fig 14. Test circuit for switching times
PBSS301NZ_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
9 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
6.7
3.7
3.3
1
2
2.3
4.6
3
0.8
0.6
Dimensions in mm
0.32
0.22
04-11-10
Fig 15. Package outline SOT223 (SC-73)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PBSS301NZ
[1]
Package
SOT223
Description
8 mm pitch, 12 mm tape and reel
1000
4000
-115
-135
For further information and the availability of packing methods, see Section 14.
PBSS301NZ_2
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
10 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
11. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig 16. Reflow soldering footprint SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
8.7
occupied area
Dimensions in mm
1
2
3
1.9
(3×)
2.7
preferred transport
direction during soldering
2.7
1.1
1.9
(2×)
sot223_fw
Fig 17. Wave soldering footprint SOT223 (SC-73)
PBSS301NZ_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
11 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS301NZ_2
20091117
Product data sheet
-
PBSS301NZ_1
PBSS301NZ_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
•
Figure 16 “Reflow soldering footprint SOT223 (SC-73)”: updated
Figure 17 “Wave soldering footprint SOT223 (SC-73)”: updated
20060907
Product data sheet
PBSS301NZ_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
12 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS301NZ_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 17 November 2009
13 of 14
PBSS301NZ
NXP Semiconductors
12 V, 5.8 A NPN low VCEsat (BISS) transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 17 November 2009
Document identifier: PBSS301NZ_2
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