Datasheet

AOT11S65/AOB11S65/AOTF11S65
650V 11A α MOS
TM
Power Transistor
General Description
Product Summary
The AOT11S65 & AOB11S65 & AOTF11S65 have been
TM
fabricated using the advanced αMOS high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
750V
IDM
45A
RDS(ON),max
0.399Ω
Qg,typ
13.2nC
Eoss @ 400V
2.9µJ
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT11S65L & AOB11S65L & AOTF11S65L
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
D
G
S
AOT11S65
G
D
S
S
AOB11S65
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT11S65/AOB11S65
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
TC=100°C
C
ID
Repetitive avalanche energy
C
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
AOTF11S65L
V
±30
11*
11*
8*
8*
8
Units
V
A
45
IAR
2
A
EAR
60
mJ
EAS
PD
120
198
1.6
dv/dt
TJ, TSTG
TL
Symbol
RθJA
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev1: Mar 2012
AOTF11S65
650
11
IDM
Avalanche Current C
S
G
AOTF11S65
39
0.31
100
20
-55 to 150
mJ
31
W
0.25
W/ oC
V/ns
°C
°C
300
AOT11S65/AOB11S65
AOTF11S65
AOTF11S65L
65
65
65
°C/W
0.5
0.63
-3.25
-4
°C/W
°C/W
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Units
Page 1 of 7
AOT11S65/AOB11S65/AOTF11S65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
650
-
-
ID=250µA, VGS=0V, TJ=150°C
700
750
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
-
-
1
VDS=520V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.6
3.3
4
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=5.5A, TJ=25°C
-
0.35
0.399
Ω
VGS=10V, ID=5.5A, TJ=150°C
-
0.98
1.11
Ω
IS=5.5A,VGS=0V, TJ=25°C
-
0.82
-
V
Maximum Body-Diode Continuous Current
-
-
11
A
Maximum Body-Diode Pulsed CurrentC
-
-
45
A
-
646
-
pF
-
42
-
pF
-
33
-
pF
-
117
-
pF
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
-
1.1
-
pF
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
-
18
-
Ω
-
13.2
-
nC
-
3.2
-
nC
Co(tr)
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=5.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
4.3
-
nC
tD(on)
Turn-On DelayTime
-
25
-
ns
tr
Turn-On Rise Time
-
20
-
ns
tD(off)
Turn-Off DelayTime
-
77
-
ns
tf
trr
Turn-Off Fall Time
-
19
-
ns
IF=5.5A,dI/dt=100A/µs,VDS=400V
VGS=10V, VDS=400V, ID=5.5A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
-
278
-
ns
Irm
IF=5.5A,dI/dt=100A/µs,VDS=400V
-
22
-
Qrr
Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V
-
4.2
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Mar 2012
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Page 2 of 7
AOT11S65/AOB11S65/AOTF11S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
25
7V
10V
20
16
7V
10V
6V
6V
12
ID (A)
ID (A)
15
5.5V
10
5.5V
8
5V
5V
4
5
VGS=4.5V
VGS=4.5V
0
0
0
5
10
15
0
20
5
VDS (Volts)
Figure 1: On-Region [email protected]°C
20
-55°C
VDS=20V
0.9
RDS(ON) (Ω )
10
125°C
ID(A)
15
1.2
100
1
0.1
VGS=10V
0.6
0.3
25°C
0.0
0.01
2
4
6
8
0
10
5
10
15
20
25
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
VGS(Volts)
Figure 3: Transfer Characteristics
1.2
3
2.5
VGS=10V
ID=5.5A
BVDSS (Normalized)
Normalized On-Resistance
10
VDS (Volts)
Figure 2: On-Region [email protected]°C
2
1.5
1
1.1
1
0.9
0.5
0
-100
-50
0
50
100
150
200
0.8
-100
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
Rev1: Mar 2012
www.aosmd.com
-50
0
50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
Page 3 of 7
AOT11S65/AOB11S65/AOTF11S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
12
125°C
VDS=480V
ID=5.5A
1.0E-01
9
VGS (Volts)
IS (A)
1.0E+00
25°C
1.0E-02
6
1.0E-03
3
1.0E-04
1.0E-05
0
0.0
0.2
0.4
0.6
0.8
1.0
0
4
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
16
20
6
5
Eoss(uJ)
Ciss
1000
Capacitance (pF)
12
Qg (nC)
Figure 8: Gate-Charge Characteristics
10000
100
Coss
4
3
Eoss
10
2
Crss
1
1
0
0
0
100
200
300
400
500
0
600
100
100
300
400
500
600
100
RDS(ON)
limited
10µs
100µs
DC
1
1ms
10ms
0.1
RDS(ON)
limited
10
ID (Amps)
10
200
VDS (Volts)
Figure 10: Coss stored Energy
VDS (Volts)
Figure 9: Capacitance Characteristics
ID (Amps)
8
10µs
100µs
1
1ms
DC
10ms
0.1s
1s
0.1
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
VDS (Volts)
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)11S65 (Note F)
Rev1: Mar 2012
1
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Figure 12: Maximum Forward Biased Safe Operating
Area for AOTF11S65(Note F)
Page 4 of 7
AOT11S65/AOB11S65/AOTF11S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
100
100µs
1
1ms
DC
0.1
TJ(Max)=150°C
TC=25°C
120
EAS(mJ)
ID (Amps)
10µs
RDS(ON)
limited
10
90
10ms
60
0.1s
1s
30
0
0.01
1
10
100
1000
VDS (Volts)
Figure 13: Maximum Forward Biased Safe Operating
Area for AOTF11S65L(Note F)
25
50
75
100
125
150
175
TCASE (°C)
Figure 14: Avalanche energy
12
Current rating ID(A)
10
8
6
4
2
0
0
25
75
100
125
TCASE (°C)
Figure 15: Current De-rating (Note B)
Rev1: Mar 2012
50
150
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Page 5 of 7
AOT11S65/AOB11S65/AOTF11S65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.63°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
0.001
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)11S65 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF11S65 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF11S65L (Note F)
Rev1: Mar 2012
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Page 6 of 7
AOT11S65/AOB11S65/AOTF11S65
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev1: Mar 2012
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 7 of 7