Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4240T
40 V; 2 A NPN low VCEsat
(BISS) transistor
Product data sheet
Supersedes data of 2001 Jul 13
2004 Jan 09
NXP Semiconductors
Product data sheet
40 V; 2 A NPN low VCEsat
(BISS) transistor
PBSS4240T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capability
VCEO
collector-emitter voltage
40
V
ICM
peak collector current
3
A
RCEsat
equivalent on-resistance
<200
mΩ
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistors.
PARAMETER
MAX.
UNIT
PINNING
PIN
APPLICATIONS
DESCRIPTION
• Supply line switching circuits
1
base
• Battery management applications
2
emitter
• DC/DC converter applications
3
collector
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
handbook, halfpage
3
3
DESCRIPTION
1
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5240T.
1
MARKING
Top view
2
2
MAM255
MARKING CODE(1)
TYPE NUMBER
PBSS4240T
Fig.1 Simplified outline (SOT23) and symbol.
ZE*
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PBSS4240T
2004 Jan 09
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
40 V; 2 A NPN low VCEsat (BISS) transistor
PBSS4240T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
2
A
ICM
peak collector current
−
3
A
IBM
peak base current
−
300
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Tamb ≤ 25 °C; note 2
−
480
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
in free air; note 1
417
K/W
in free air; note 2
260
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
2004 Jan 09
3
NXP Semiconductors
Product data sheet
40 V; 2 A NPN low VCEsat (BISS) transistor
PBSS4240T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
100
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
−
50
μA
nA
collector-base cut-off current IE = 0; VCB = 30 V
IEBO
emitter-base cut-off current
IC = 0; VEB = 4 V
−
−
100
hFE
DC current gain
IC = 100 mA; VCE = 2 V
350
470
−
IC = 500 mA; VCE = 2 V
300
450
−
IC = 1 A; VCE = 2 V
300
420
−
IC = 2 A; VCE = 2 V
150
250
−
IC = 100 mA; IB = 1 mA
−
45
70
mV
IC = 500 mA; IB = 50 mA
−
70
100
mV
IC = 750 mA; IB = 15 mA
−
120
180
mV
IC = 1 A; IB = 50 mA; note 1
−
130
180
mV
IC = 2 A; IB = 200 mA; note 1
−
240
320
mV
VCEsat
collector-emitter saturation
voltage
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
−
140
<200
mΩ
VBEsat
base-emitter saturation
voltage
IC = 2 A; IB = 200 mA; note 1
−
−
1.1
V
VBEon
base-emitter turn on voltage
IC = 100 mA; VCE = 2 V
−
−
0.75
V
Cc
collector capacitance
IE = Ie = 0; VCB = 10 V; f = 1 MHz
−
15
20
pF
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 100 MHz
100
230
−
MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jan 09
4
NXP Semiconductors
Product data sheet
40 V; 2 A NPN low VCEsat (BISS) transistor
PBSS4240T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 09
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
5
NXP Semiconductors
Product data sheet
40 V; 2 A NPN low VCEsat (BISS) transistor
PBSS4240T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 09
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp7
Date of release: 2004 Jan 09
Document order number: 9397 750 12435