SiR172DP-DS

SPICE Device Model SiR172DP
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
DESCRIPTION
CHARACTERISTICS
The attached SPICE model describes the typical electrical
characteristics of the n-channel vertical DMOS. The
subcircuit model is extracted and optimized over the
- 55 °C to + 125 °C temperature ranges under the pulsed
0 V to 10 V gate drive. The saturated output impedance is
best fit at the gate bias near the threshold voltage. A novel
gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding
convergence difficulties of the switched Cgd model. All
model parameter values are optimized to provide a best fit
to the measured electrical data and are not intended as an
exact physical interpretation of the device.
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge

SUBCIRCUIT MODEL SCHEMATIC
D
CGD
R1
3
M2
Gy
G
RG
Gx
– +
ETCV
CGS
DBD
M1
S
Note
• This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer
to the appropriate datasheet of the same number for guaranteed specification limits.
S13-0825-Rev. B, 22-Apr-13
1
Document Number: 65310
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPICE Device Model SiR172DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Drain-Source On-State Resistancea
RDS(on)
SIMULATED MEASURED
DATA
DATA
UNIT
Static
1.9
-
VGS = 10 V, ID = 16.1 A
0.0076
0.0074
VGS = 4.5 V, ID = 13.6 A
0.0108
0.0103
V

Forward Transconductancea
gfs
VDS = 15 V, ID = 16.1 A
41
49
S
Diode Forward Voltagea
VSD
IS = 10 A
0.84
0.85
V
997
997
198
195
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 16.1 A
VDS = 15 V, VGS = 4.5 V, ID = 16.1 A
122
120
17
19.5
9.3
9.8
3.7
3.7
3.7
3.7
pF
nC
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
S13-0825-Rev. B, 22-Apr-13
2
Document Number: 65310
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPICE Device Model SiR172DP
www.vishay.com
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)
50
5
40
4
TJ = 125 °C
ID - Drain Current (A)
ID - Drain Current (A)
VGS = 10 V, 7 V, 6 V, 5 V, 4 V
30
20
VGS = 3 V
10
TJ = - 55 °C
3
2
1
TJ = 25 °C
0
0
0.0
0.3
0.6
0.9
1.2
0
1.5
1
VDS - Drain-to-Source Voltage (V)
2
3
4
VGS - Gate-to-Source Voltage (V)
1500
0.015
Ciss
0.012
Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1200
VGS = 4.5 V
0.009
VGS = 10 V
900
600
Coss
300
Crss
0.006
0
0
10
20
30
40
50
0
ID - Drain Current (A)
12
18
24
30
VDS - Drain-to-Source Voltage (V)
10
100
VDS = 15 V
ID = 16.1 A
8
TJ = 25 °C
VDS = 24 V
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
6
6
4
TJ = 150 °C
10
1
2
0.1
0
0
3
6
9
12
15
18
21
0
Qg - Total Gate Charge (nC)
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Note
• Dots and squares represent measured data.
S13-0825-Rev. B, 22-Apr-13
3
Document Number: 65310
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPICE Device Model SiR172DP
www.vishay.com
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)
1.7
0.030
ID = 17 A
ID = 16.1 A
RDS(on) - On-Resistance (Ω)
RDS(on) - On-Resistance
Normalized
1.4
VGS = 10 V, 4.5 V
1.1
0.8
0.020
TJ = 125 °C
0.010
TJ = 25 °C
0.5
- 50
0.000
- 25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Note
• Dots and squares represent measured data.
S13-0825-Rev. B, 22-Apr-13
4
Document Number: 65310
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000