UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 8N80 is generally applied in high efficiency switch mode power supplies. FEATURES * Typically 35 nC Low Gate Charge * RDS(ON) = 1.45Ω @VGS = 10V * Typically 13 pF Low CRSS * Improved dv/dt Capability * Fast Switching Speed * 100% Avalanche Tested * RoHS–Compliant Product SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N80L-TA3-T 8N80G-TA3-T 8N80L-TF3-T 8N80G-TF3-T 8N80L-TF1-T 8N80G-TF1-T 8N80L-TF2-T 8N80G-TF2-T Note: Pin Assignment: G: GND, D: Drain, S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube 1 of 7 QW-R502-471.I 8N80 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Drain Current (Continuous) (TC=25°C) ID 8 A Drain Current (Pulsed) (Note 1) IDM 32 A Avalanche Current (Note 1) IAR 8 A Single Pulse Avalanche Energy (Note 2) EAS 850 mJ Repetitive Avalanche Energy (Note 1) EAR 17.8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 178 Power Dissipation TO-220F/TO-220F1 59 W TO-220F2 62 PD TO-220 1.43 Linear Derating Factor above TO-220F/TO-220F1 0.47 W/°C TC=25°C TO-220F2 0.5 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient Junction to Case TO-220 TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATINGS 62.5 0.7 2.1 2.0 UNIT °C/W °C/W 2 of 7 QW-R502-471.I 8N80 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA VDS=800V, VGS=0V Drain-Source Leakage Current IDSS VDS=640V, TC=125°C Gate- Source Leakage Current IGSS VGS=±30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A Forward Transconductance (Note 1) gFS VDS=50V, ID=4A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 1, Note 2) Total Gate Charge QG VGS=10V, VDS=640V, Gate to Source Charge QGS ID=8A Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=400V, ID=8A, RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=8A, VGS=0V Reverse Recovery Time (Note 1) trr IS=8A, VGS=0V, dIF/dt=100A/µs Reverse Recovery Charge (Note 1) QRR Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 800 V V/°C 0.5 10 100 ±100 3.0 µA nA 5.0 1.18 1.45 5.6 V Ω S 1580 2050 135 175 13 17 pF pF pF 35 10 14 40 110 65 70 90 230 140 150 nC nC nC ns ns ns ns 8 A 32 A 1.4 V ns µC 690 8.2 45 3 of 7 QW-R502-471.I 8N80 Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-471.I 8N80 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 7 QW-R502-471.I 8N80 Power MOSFET Drain Current,ID (µA) Drain Current,ID (µA) Drain Current,ID (A) Drain Current, ID (A) TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-471.I 8N80 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-471.I