Datasheet

UNISONIC TECHNOLOGIES CO., LTD
8N80
Power MOSFET
8A, 800V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 8N80 is an N-channel mode power MOSFET, it uses
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The UTC 8N80 is generally applied in high efficiency switch mode
power supplies.
„
FEATURES
* Typically 35 nC Low Gate Charge
* RDS(ON) = 1.45Ω @VGS = 10V
* Typically 13 pF Low CRSS
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHS–Compliant Product
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N80L-TA3-T
8N80G-TA3-T
8N80L-TF3-T
8N80G-TF3-T
8N80L-TF1-T
8N80G-TF1-T
8N80L-TF2-T
8N80G-TF2-T
Note: Pin Assignment: G: GND, D: Drain, S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
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QW-R502-471.I
8N80
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Drain Current (Continuous) (TC=25°C)
ID
8
A
Drain Current (Pulsed) (Note 1)
IDM
32
A
Avalanche Current (Note 1)
IAR
8
A
Single Pulse Avalanche Energy (Note 2)
EAS
850
mJ
Repetitive Avalanche Energy (Note 1)
EAR
17.8
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
178
Power Dissipation
TO-220F/TO-220F1
59
W
TO-220F2
62
PD
TO-220
1.43
Linear Derating Factor above
TO-220F/TO-220F1
0.47
W/°C
TC=25°C
TO-220F2
0.5
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJC
RATINGS
62.5
0.7
2.1
2.0
UNIT
°C/W
°C/W
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8N80
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
VDS=800V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=640V, TC=125°C
Gate- Source Leakage Current
IGSS
VGS=±30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4A
Forward Transconductance (Note 1)
gFS
VDS=50V, ID=4A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
QG
VGS=10V, VDS=640V,
Gate to Source Charge
QGS
ID=8A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=400V, ID=8A,
RG=25Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS=8A, VGS=0V
Reverse Recovery Time (Note 1)
trr
IS=8A, VGS=0V,
dIF/dt=100A/µs
Reverse Recovery Charge (Note 1)
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
800
V
V/°C
0.5
10
100
±100
3.0
µA
nA
5.0
1.18 1.45
5.6
V
Ω
S
1580 2050
135 175
13
17
pF
pF
pF
35
10
14
40
110
65
70
90
230
140
150
nC
nC
nC
ns
ns
ns
ns
8
A
32
A
1.4
V
ns
µC
690
8.2
45
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8N80
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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8N80
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
„
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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8N80
Power MOSFET
Drain Current,ID (µA)
Drain Current,ID (µA)
Drain Current,ID (A)
Drain Current, ID (A)
TYPICAL CHARACTERISTICS
„
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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8N80
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-471.I
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