Datasheet

AON1610
20V N-Channel MOSFET
General Description
Product Summary
The AON1610 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=4.5V)
20V
4A
Top View
VDS
RDS(ON) (at VGS =4.5V)
< 29mΩ
RDS(ON) (at VGS =2.5V)
< 34mΩ
RDS(ON) (at VGS =1.8V)
< 44mΩ
RDS(ON) (at VGS =1.5V)
< 60mΩ
Typical ESD protection
HBM Class 2
DFN 1.6x1.6A
Bottom View
D
Pin 1
D
S
S
G
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev.1.0 : February 2013
Steady-State
A
1.8
W
1.15
TJ, TSTG
Symbol
t ≤ 10s
V
16
PD
TA=70°C
±8
3
IDM
TA=25°C
Power Dissipation A
Units
V
4
ID
TA=70°C
Maximum
20
RθJA
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°C
-55 to 150
Typ
56
88
Max
70
110
Units
°C/W
°C/W
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AON1610
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
16
V
TJ=55°C
±10
µA
1.1
V
23
29
31.5
38
VGS=2.5V, ID=3A
26.5
34
mΩ
VGS=1.8V, ID=2A
33.5
44
mΩ
VGS=1.5V, ID=1A
43.5
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=4A
25
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.67
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
0.75
VGS=4.5V, ID=4A
Coss
Units
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V)
Total Gate Charge
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
mΩ
S
1
V
2.5
A
748
pF
96
pF
67
pF
1.4
Ω
7.5
VGS=4.5V, VDS=10V, ID=4A
Qgs
mΩ
14
nC
1.5
nC
Gate Drain Charge
1.8
nC
Turn-On DelayTime
4.5
ns
15
ns
Body Diode Reverse Recovery Time
VGS=4.5V, VDS=10V, RL=2.5Ω,
RGEN=3Ω
IF=4A, dI/dt=100A/µs
27
ns
3
ns
8.5
ns
nC
3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2013
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Page 2 of 5
AON1610
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
2.5V
VDS=5V
1.8V
15
15
ID(A)
ID (A)
4.5V
1.5V
10
125°C
10
5
5
VGS=1.2V
25°C
0
0
0
1
2
3
4
0
5
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
100
Normalized On-Resistance
1.6
80
RDS(ON) (mΩ
Ω)
0.5
60
VGS=1.5V
VGS=1.8V
40
VGS=2.5V
20
VGS=1.8V
ID=2A
1.2
1
VGS=1.5V
ID=1A
0.8
VGS=4.5V
0
0
0
VGS=2.5V
ID=3A
1.4
VGS=4.5V
ID=4A
2
4
6
8
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
50
ID=4A
45
IS (A)
1.0E+00
40
RDS(ON) (mΩ
Ω)
125°C
35
30
125°C
1.0E-01
1.0E-02
25
25°C
1.0E-03
20
25°C
15
1.0E-04
10
0
1
2
3
4
5
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: February 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON1610
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1200
VDS=10V
ID=4A
1000
Capacitance (pF)
VGS (Volts)
4
3
2
1
Ciss
800
600
Coss
400
200
0
Crss
0
0
2
4
6
8
10
0
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
16
20
200
100.0
10µs 10µs
RDS(ON)
limited
100µs
1.0
1ms
0.1
10ms
100ms
1s
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
120
80
40
DC
1
10
TJ(Max)=150°C
TA=25°C
160
Power (W)
10.0
-ID (Amps)
8
VDS (Volts)
Figure 8: Capacitance Characteristics
0
1E-05
100
VDS (Volts)
VGS> or equal to 2.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=110°C/W
0.1
PD
Single Pulse
0.01
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: February 2013
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Page 4 of 5
AON1610
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev.1.0: February 2013
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5