UNISONIC TECHNOLOGIES CO., LTD UTT75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics including fast switching speed and low thermal resistance. It is usually used in the telecom and computer applications. FEATURES * RDS(ON) < 15mΩ @ VGS = 10 V, ID = 40 A * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT75N75L-TA3-T UTT75N75G-TA3-T UTT75N75L-TF3-T UTT75N75G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-691.B UTT75N75 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 75 V Gate-Source Voltage VGSS ±20 V Continuous (TC = 25°C) ID 80 A Drain Current Pulsed (Note 2) IDM 320 A Single Pulsed Avalanche Energy (Note 3) EAS 700 mJ TO-220 300 W Power Dissipation PD TO-220F 48 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area 3. Starting TJ=25°C, ID=40A, VDD=37.5V 4. ISD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA TO-220 TO-220F θJC RATINGS 62.5 0.5 2.6 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0 V, ID = 250 µA VDS = 75 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 40 A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS = 0V, VDS = 25V Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 30V, ID =0.5A, VGS=10V, RG=25Ω Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS = 50V, VGS = 10V Gate-Source Charge QGS ID = 1.3A Gate-Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 2) VSD VGS = 0V, IS = 80A Continuous Source Current IS Pulsed Source Current (Note 1) ISM Notes: 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 75 1.4 10 1 100 -100 V µA nA nA 3.0 15 V mΩ 4000 400 350 pF pF pF 200 250 1000 420 170 230 17 35 ns ns ns ns nC nC nC 1.5 80 320 V A A 2 of 5 QW-R502-691.B UTT75N75 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-691.B UTT75N75 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms QG VGS QGS QGD VD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS ID(t) VDS(t) VDD IAS tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R502-691.B UTT75N75 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 450 300 400 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 50 0 350 300 250 200 150 100 50 0 0.5 1 1.5 2.0 2.5 3.0 0 3.5 4.0 0 Gate Threshold Voltage, VTH (V) 40 60 80 100 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics 20 20 Drain Current vs. Source to Drain Voltage 12 18 10 14 Drain Current, ID (A) Drain Current, ID (A) 16 VGS=10V ID=20A 12 10 8 6 4 8 6 4 2 2 0 0 0 50 100 150 200 Drain to Source Voltage, VDS (mV) 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-691.B