Datasheet

UNISONIC TECHNOLOGIES CO., LTD
50N06
Power MOSFET
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
1

DESCRIPTION
TO-263
The UTC 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.


1
1
TO-220
FEATURES
* RDS(ON) < [email protected] = 10 V
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
TO-220F
1
1
TO-220F3
SYMBOL
TO-251
TO-252
2.Drain
1
TO-252D
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
50N06L-TA3-T
50N06G-TA3-T
50N06L-TF3-T
50N06G-TF3-T
50N06L-TF3T-T
50N06G-TF3T-T
50N60L-TM3-T
50N60G-TM3-T
50N06L-TN3-R
50N06G-TN3-R
50N06L-TND-R
50N06G-TND-R
50N06L-TQ2-T
50N06G-TQ2-T
50N06L-TQ2-R
50N06G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F3
TO-251
TO-252
TO-252D
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tube
Tape Reel
1 of 9
QW-R502-088.H
50N06

Power MOSFET
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F3
TO-251
TO-252
TO-252D
TO-263
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MARKING
2 of 9
QW-R502-088.H
50N06

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25°C
TC = 100°C
SYMBOL
VDSS
VGSS
ID
Pulsed Drain Current (Note 2)
RATINGS
60
±20
50
35
200
480
13
7
120
70
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
W
RATING
UNIT
62
°C/W
100
°C/W
1.24
1.78
°C/W
°C/W
2.7
°C/W
1.24
°C/W
IDM
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
TO-220/TO-263
TO-220F/TO-220F3
Power Dissipation (TC=25°C)
PD
TO-251/TO-252
46
W
TO-252D
Junction Temperature
TJ
+150
°C
Operation and Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by TJ
3. L=0.38mH, IAS=50A, VDD= 25V, RG=20Ω, Starting TJ=25°C
4. ISD ≤50A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C

THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220/TO-220F
TO-220F3/TO-263
TO-251/TO-252
TO-252D
TO-220
TO-220F/TO-220F3
TO-251/TO-252
TO-252D
TO-263
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
3 of 9
QW-R502-088.H
50N06

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
Forward
Reverse
VGS = 0 V, ID = 250 μA
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
IGSS
VGS = -20V, VDS = 0 V
ID = 250 μA,
△BVDSS/△TJ
Referenced to 25°C
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 25 A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS = 0 V, VDS = 25 V
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD = 30V, ID =0.5 A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS = 50V, VGS = 10 V
Gate-Source Charge
QGS
ID = 1.3A (Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
IS = 50A, VGS = 0 V
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
IS = 50A, VGS = 0 V
dIF / dt = 100 A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
60
10
100
-100
0.07
2.0
V
μA
nA
nA
V/°C
18
4.0
23
V
mΩ
900
430
80
1220
550
100
pF
pF
pF
60
180
300
200
60
9
20
80
220
350
250
80
ns
ns
ns
ns
nC
nC
nC
1.5
V
50
A
200
A
54
81
ns
μC
4 of 9
QW-R502-088.H
50N06

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 9
QW-R502-088.H
50N06

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RG
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Fig. 4B Unclamped Inductive Switching Waveforms
6 of 9
QW-R502-088.H
50N06
Drain Current, ID (A)
TYPICAL CHARACTERISTICS
Drain Current, ID (A)

Power MOSFET
On State Current vs.
Allowable Case Temperature
70
60
50
40
30
20
VGS=10V
VGS=20V
10
0
0 20 30 40 50 60 70 80 90100 120140160
Drain Current, ID (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Reverse Drain Current, ISD (A)
Drain to Source OnResistance,RDS(ON) (mΩ)
On-Resistance Variation vs.
Drain Current and Gate Voltage
102
150°C
101
25°C
*Note:
1. VGS=0V
2. 250µs Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
7 of 9
QW-R502-088.H
50N06
1.2
Breakdown Voltage Variation vs.
Junction Temperature
1.1
1.0
0.9
*Note:
1. VGS=0V
2. ID=250µA
0.8
150 200
-100 -50
0
50 100
Junction Temperature, TJ (°C)
Drain-Source On-Resistance, RDS(ON),
(Normalized)
Drain-Source Breakdown Voltage,
BVDSS(Normalized)
TYPICAL CHARACTERISTICS(Cont.)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
100µs
1ms
102
10ms
1
10
10ms
*Note:
1. Tc=25°C
2. TJ=150°C
-1 3. Single Pulse
10
100
10-1
100
101
102
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
Drain Current , ID,(A)
10 Operation in This
Area by RDS (on)
*Note:
1. VGS=10V
2. ID=25A
-50
0
50
100
150
Junction Temperature, TJ (°C)
Maximum Drain Current vs.
Case Temperature
Maximum Safe Operating
3
On-Resistance Variation vs.
Junction Temperature
40
30
20
10
0
25
75
50
100
125
Case Temperature, TC (°C)
150
Thermal Response, ZθJC (t)

Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 9
QW-R502-088.H
50N06
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
9 of 9
QW-R502-088.H