UNISONIC TECHNOLOGIES CO., LTD 2N90Z Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N90Z is universally applied in high efficiency switch mode power supply. 1 TO-220F FEATURES * RDS(ON) = 7.2Ω @VGS = 10 V * Typically 5.5 pF low CRSS * High switching speed * Typically 12nC low gate charge * Improved dv/dt capability * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N90ZL-TF3-T 2N90ZG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220F 1 G Pin Assignment 2 3 D S Packing Tube 1 of 6 QW-R502-848.A 2N90Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS 900 V Gate-Source Voltage VGSS ±20 V 2.2 A Continuous ID Drain Current Pulsed (Note 2) IDM 8.8 A Avalanche Current (Note 2) IAR 2.2 A 170 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 8.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns Power Dissipation PD 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 65mH, IAS = 2.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 2.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJc UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 5 UNIT °С/W °С/W 2 of 6 QW-R502-848.A 2N90Z Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS BVDSS ID=250µA, VGS=0V △BVDSS/△TJ Reference to 25°C, ID=250µA VDS=900V, VGS=0V IDSS VDS=720V, TC=125°C VGS=+20V, VDS=0V IGSS VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.1A Forward Transconductance gFS VDS=50V, ID=1.1A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=720V, ID=2.2A Gate to Source Charge QGS (Note 1,2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=450V, ID=2.2A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=2.2A, VGS=0V Reverse Recovery Time trr IS=2.2A,VGS=0V,dIF/dt=100A/µs (Note 1) Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 900 V V/°C 1.0 10 100 5 -5 3.0 µA µA µA 5.0 7.2 V Ω S 390 45 5.5 500 60 7.0 pF pF pF 12 2.8 6.1 15 35 20 30 15 40 80 50 70 nC nC nC ns ns ns ns 2.2 A 8.8 A 1.4 V ns µC 5.6 2.0 400 1.6 3 of 6 QW-R502-848.A 2N90Z Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-848.A 2N90Z Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-848.A 2N90Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage 250 Drain Current vs. Gate Threshold Voltage 300 Drain Current, ID (µA) 200 150 100 250 200 150 100 50 50 0 0 0 1 2 3 4 5 Gate Threshold Voltage, VTH (V) 6 Drain Current, ID (A) Drain Current, ID (A) 0 250 750 1000 1250 500 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-848.A