Datasheet

AON6154
45V N-Channel MOSFET
General Description
Product Summary
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
VDS
Applications
ID (at VGS=10V)
45V
100A
RDS(ON) (at VGS=10V)
< 1.5mΩ
RDS(ON) (at VGS=4.5V)
< 2.1mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
D
DFN5x6
Top View
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
PIN1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6154
DFN 5x6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy
VDS Spike
Power Dissipation B
L=0.3mH
C
10µs
TC=25°C
Junction and Storage Temperature Range
Rev.1.0: November 2015
45
A
EAS
304
mJ
54
V
125
Steady-State
Steady-State
W
50
6.2
W
4.0
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
49
PD
TA=25°C
Power Dissipation A
A
39
VSPIKE
TC=100°C
V
400
IDSM
TA=70°C
±20
100
IDM
TA=25°C
Continuous Drain
Current
Units
V
100
ID
TC=100°C
Maximum
45
RθJA
RθJC
-55 to 150
Typ
15
40
0.8
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Max
20
50
1.0
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6154
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.4
±100
nA
1.85
2.4
V
1.2
1.5
1.85
2.3
2.1
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
1.6
gFS
Forward Transconductance
VDS=5V, ID=20A
100
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=22.5V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=20A
Coss
Units
45
VDS=45V, VGS=0V
IDSS
Max
mΩ
S
1
V
100
A
6575
pF
870
pF
82
pF
1.1
1.7
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
86
120
nC
Qg(4.5V)
Total Gate Charge
38
54
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
VGS=10V, VDS=22.5V, ID=20A
0.5
mΩ
19
nC
6
nC
17
ns
VGS=10V, VDS=22.5V,
RL=1.125Ω, RGEN=3Ω
5.5
ns
56
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
5
ns
IF=20A, di/dt=400A/µs
22
Qrr
Body Diode Reverse Recovery Charge IF=20A, di/dt=400A/µs
60
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2015
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Page 2 of 6
AON6154
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
3.5V
80
VDS=5V
4.5V
80
10V
60
ID (A)
ID (A)
60
40
125°C
40
20
20
25°C
VGS=3V
0
0
0
1
2
3
4
1
5
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
4
Normalized On-Resistance
1.8
3
RDS(ON) (mΩ)
2
VGS=4.5V
2
1
VGS=10V
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
4
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ)
3
2
1.0E-02
25°C
1.0E-03
1
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: November 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Page 3 of 6
AON6154
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8000
VDS=22.5V
ID=20A
Ciss
8
Capacitance (pF)
VGS (Volts)
6000
6
4
2
4000
2000
Coss
Crss
0
0
0
20
40
60
80
100
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
35
40
45
TJ(Max)=150°C
TC=25°C
10µs
10µs
400
100µs
1ms
10ms
Power (W)
ID (Amps)
RDS(ON)
limited
DC
1.0
TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1
300
200
100
0.1
1
10
VDS (Volts)
100
1000
0
0.0001
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
15
500
10.0
10
10
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
5
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.0°C/W
1
PDM
Single Pulse
0.1
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: November 2015
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Page 4 of 6
AON6154
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
150
Current rating ID (A)
Power Dissipation (W)
150
100
50
100
50
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
0.1
PDM
Single Pulse
0.01
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: November 2015
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Page 5 of 6
AON6154
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: November 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6