AON7568 30V N-Channel MOSFET General Description Product Summary VDS • Low RDS(ON) • Optimized for Load Switch • High Current Capability • ESD Protected • RoHS and Halogen-Free Compliant 30V 32A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 4.6mΩ RDS(ON) (at VGS=4.5V) < 7.2mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • Battery Charging & Discharging for NB Battery Pack Top View DFN 3x3 EP Bottom View D Top View 1 8 2 7 3 6 4 5 PIN1 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7568 DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: January 2016 IAS 30 A EAS 45 mJ VSPIKE 36 V 28 Steady-State Steady-State W 11 5 RθJA RθJC W 3.2 TJ, TSTG Symbol t ≤ 10s A 20 PDSM Junction and Storage Temperature Range A 25 PD TA=25°C V 118 IDSM TA=70°C ±20 32 IDM TA=25°C Units V 32 ID TC=100°C Maximum 30 -55 to 150 Typ 20 45 3.7 www.aosmd.com Max 25 55 4.5 °C Units °C/W °C/W °C/W Page 1 of 6 AON7568 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.3 ±10 µA 1.85 2.4 V 3.8 4.6 5.6 6.8 7.2 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 5.2 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=20A Coss Units 33 VDS=30V, VGS=0V IDSS Max VGS=0V, VDS=15V, f=1MHz mΩ mΩ S 1 V 30 A 2270 pF 245 pF 200 pF 2.6 4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 40 60 nC Qg(4.5V) Total Gate Charge 18 30 Qgs Gate Source Charge Qgd tD(on) f=1MHz VGS=10V, VDS=15V, ID=20A 1.2 nC 6 nC Gate Drain Charge 10 nC Turn-On DelayTime 7.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, di/dt=500A/µs 9 ns 38 ns 10 ns 10.5 ns nC 16 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2016 www.aosmd.com Page 2 of 6 AON7568 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4V 80 4.5V 10V 60 3.5V 125°C ID (A) 60 ID (A) VDS=5V 80 40 40 25°C 20 20 VGS=3V 0 0 0 1 2 3 4 0 5 2 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 1.8 6 Normalized On-Resistance 8 RDS(ON) (mΩ Ω) 1 VGS=4.5V 4 VGS=10V 2 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 15 1.0E+01 ID=20A 1.0E+00 125°C 1.0E-01 9 IS (A) RDS(ON) (mΩ Ω) 12 125°C 1.0E-02 6 25°C 1.0E-03 3 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: January 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7568 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=15V ID=20A 3000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2500 2000 1500 1000 2 Coss 500 0 Crss 0 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 300 1000.0 10µs 100µs 1ms 10ms 10.0 DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 Power (W) RDS(ON) limited TJ(Max)=150°C TC=25°C 250 10µs 100.0 ID (Amps) 5 200 150 100 50 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.5°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2016 www.aosmd.com Page 4 of 6 AON7568 40 40 30 30 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 20 10 0 0 0 25 50 75 100 125 150 0 25 TCASE (° °C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: January 2016 www.aosmd.com Page 5 of 6 AON7568 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: January 2016 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6