Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT7430
Preliminary
Power MOSFET
30V, 34A N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET

DESCRIPTION
The UTC UT7430 is an N-Channel MOSFET, it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance, high switching speed and low gate charge.
The UTC UT7430 is suitable for general purpose applications and
high side switch in SMPS.

FEATURES
* RDS(ON)<12mΩ @ VGS=10V, ID=20A
RDS(ON)<16mΩ @ VGS=4.5V, ID=20A
* Low gate charge
* High switching speed

ORDERING INFORMATION
Ordering Number
Note:

UT7430G-K08-3030-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(3×3)
S: Source
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
8
D
Packing
Tape Reel
MARKING
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
30
V
±20
V
TC=25°C
34
A
Continuous
ID
Drain Current
TC=100°C
21
A
Pulsed (Note 3)
IDM
80
A
TA=25°C
13
A
IDSM
Continuous Drain Current (Note 1)
TA=70°C
10.2
A
Avalanche Current (Note 3)
IAR
22
A
Repetitive Avalanche Energy
L=0.1mH (Note 3)
EAR
24
mJ
TC=25°C
23
W
PD
Power Dissipation (Note 2)
TC=100°C
9
W
TA=25°C
3.1
W
PDSM
Power Dissipation (Note 1)
TA=70°C
2
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 1)
θJA
60
75
°C/W
Junction to Case (Note 2)
θJC
4.5
5.4
°C/W
2
Notes: 1. The value of θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The value in any given application depends on the user's specific board
design, and the maximum temperature of 150°C may be used if the PCB allows it.
2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is
more useful in setting the upper dissipation limit for cases where additional heat sinking is used.
3. Repetitive rating, pulse width limited by junction temperature TJ (MAX)=150°C.
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
30
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=5V, ID=20A
VGS=10V, VDS=5V
1.5
Forward Transconductance
gFS
On State Drain Current
ID(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=15V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=4.5V, VDS=15V, ID=20A
Total Gate Charge
QG
VGS=10V, VDS=15V, ID=20A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
Current
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
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MIN TYP MAX UNIT
1
100
100
1.9
10
13
45
2.5
12
16
80
0.8
760
125
70
1.6
2.4
6.6
14
2.4
3
4.4
9
17
6
0.7
V
µA
nA
nA
V
mΩ
mΩ
S
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
25
A
1
V
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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