AO4928 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AO4928 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4928 is Pb-free (meets ROHS & Sony 259 specifications). AO4928L is a Green Product ordering option. AO4928L and AO4928 are electrically identical. FET1 VDS (V) = 30V ID = 9A RDS(ON) < 16mΩ RDS(ON) < 19.5mΩ FET2 V DS(V) = 30V I D=7.3A (V GS = 10V) <24mΩ (V GS = 10V) <29mΩ (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Max FET1 Parameter VDS 30 Drain-Source Voltage VGS Gate-Source Voltage ±12 Continuous Drain Current A Pulsed Drain Current B Avalanche Current C Repetitive avalanche energy L=0.3mH C TA=25°C Power Dissipation Junction and Storage Temperature Range V 7.3 7.2 5.9 40 40 IAR 16 12 A mJ EAR TJ, TSTG Thermal Characteristics FET1 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State 38 22 2.0 2.0 1.3 1.3 -55 to 150 -55 to 150 Thermal Characteristics FET2 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Symbol Alpha & Omega Semiconductor, Ltd. ±12 9.0 PDSM TA=70°C Units V IDSM IDM TA=25°C TA=70°C Max FET2 30 RθJA RθJL A W °C Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W Typ 48 74 32 Max 62.5 90 40 Units °C/W °C/W °C/W AO4928 FET1 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=24V, V GS=0V 30 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=4.5V, VDS=5V 40 TJ=125°C VGS=10V, ID=9A Typ 0.01 0.1 5 10 µA 1.85 2.4 V 13.2 16 20.5 25.6 15.7 19.5 A gFS Forward Transconductance VDS=5V, ID=9A 64 VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current 0.4 IS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 1450 mΩ mΩ S 0.6 V 4.5 A 1885 pF VGS=0V, VDS=15V, f=1MHz 224 VGS=0V, VDS=0V, f=1MHz 1.6 3 24.0 31 pF 92 VGS=10V, V DS=15V, ID=9A mA 0.1 Static Drain-Source On-Resistance VGS=4.5V, ID=7A Units V RDS(ON) TJ=125°C Max pF Ω 12.0 nC 3.9 nC Qgd Gate Drain Charge 4.2 nC tD(on) Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=9A, dI/dt=300A/µs 10 Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=300A/µs 6.8 VGS=10V, V DS=15V, R L=1.7Ω, RGEN=3Ω 4.7 ns 24.0 ns 4.0 ns 13 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0:Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4928 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 VDS=5V 25 6V 4.5V 4V 20 ID(A) ID (A) 60 3.5V 40 15 10 20 5 VGS=3V 0 DYNAMIC 1 2 3 4 5 1 1.5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 20 Normalized On-Resistance 2 VGS=4.5V 17 14 11 VGS=10V 8 VGS=10V ID=9A 1.8 1.6 VGS=4.5V 1.4 ID=7A 1.2 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 45 40 1.0E+01 ID=9A 35 125°C 1.0E+00 30 IS (A) RDS(ON) (mΩ) 25°C 0 0 RDS(ON) (mΩ) 125° 125°C 25 25°C 1.0E-01 1.0E-02 20 1.0E-03 15 10 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4928 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 2000 VDS=15V ID=9A 6 Capacitance (pF) VGS (Volts) 8 4 2 1500 1000 Crss 500 0 0 5 10 15 20 0 DYNAMIC PARAMETERS 100.00 100µ RDS(ON) limited Power (W) 1s 10s TJ(Max)=150°C TA=25°C 0.10 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics DC 30 TJ(Max)=175°C TC=25°C 40 1ms 1.00 5 50 10µs 10.00 Coss 0 25 Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Ciss 30 20 10 0.01 0.01 0.1 1 VDS (Volts) 10 100 0 0.0001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000 AO4928 FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 VDS=24V 0.7 VSD(V) 1.0E-03 IR (A) 20A 0.8 VDS=12V 1.0E-04 0.6 0.5 10A 0.4 5A 0.3 1.0E-05 0.2 IS=1A 0.1 1.0E-06 0 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 25 125ºC Qrr (nC) 20 25ºC 15 Qrr 10 Irm 12 10 10 8 8 6 125ºC 25ºC 5 12 0 5 10 15 20 25 4 2 2 5 Qrr 0 200 400 600 6 4 25ºC 2 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. S 0.5 25ºC 5 10 15 0 20 25 30 2.5 Is=20A 125ºC 2 25ºC 125º Irm 0 1 125ºC 12 trr (ns) 10 1.5 15 Irm (A) Qrr (nC) 25ºC 25ºC Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 125ºC 15 2 0 8 Is=20A 2.5 125ºC 0 30 10 20 di/dt=800A/us 6 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 3 trr 4 0 0 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 9 1.5 trr 6 25ºC 3 125ºC 1 S 0 0 200 S di/dt=800A/us 50 S 30 0 trr (ns) DYNAMIC 50 Irm (A) 0 400 600 800 0.5 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt AO4928 FET2 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, V DS=5V 40 TJ=55°C VGS=10V, I D=7.3A Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V A VGS=4.5V, I D=6A 23.4 29 mΩ VGS=2.5V, I D=5.5A 35.4 48 mΩ 1 V 4.5 A 1100 pF VDS=5V, ID=7.3A DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA 1.5 24 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Crss 100 36 Forward Transconductance Output Capacitance 1 µA 20 gFS Coss 5 30.0 TJ=125°C VSD IS Units V VDS=24V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 IDSS RDS(ON) Typ 26 S 0.71 900 mΩ VGS=0V, VDS=15V, f=1MHz 88 VGS=0V, VDS=0V, f=1MHz 0.95 10 nC VGS=4.5V, V DS=15V, I D=7.3A 1.8 nC pF 65 pF 1.5 Ω Qgd Gate Drain Charge 3.75 nC tD(on) Turn-On DelayTime 3.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=2.1Ω, RGEN=6Ω 3.5 ns 21.5 ns 2.7 ns 16.8 8 ns nC trr Body Diode Reverse Recovery Time IF=7.3A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : Sept 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4928 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 50 40 3V 12 ID(A) ID (A) VDS=5V 16 4.5V 30 2.5V 125°C 8 20 25°C 10 4 VGS=2V 0 0 0 1 2 3 4 5 0 VDS (Volts) Figure 1: On-Region Characteristics 1.5 2 2.5 3 1.8 25 Normalized On-Resistance RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics 30 VGS=4.5V 20 VGS=10V 15 ID=6A VGS=4.5V 1.5 1.2 VGS=10V ID=7.3A 0.9 0.6 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 1.0E+01 55 1.0E+00 50 ID=7.3A 1.0E-01 40 125°C IS (A) 45 35 -25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 RDS(ON) (mΩ) 0.5 125°C 1.0E-02 1.0E-03 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 25 1.0E-04 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES 25°COF ITS PRODUCTS. AOS RESERVES 15 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. VSD (Volts) Figure 6: Body-Diode Characteristics AO4928 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=7.3A 1200 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1000 800 600 400 Crss 1 Coss 200 0 0 0 2 4 6 8 10 12 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 50 10µs 100µs 1ms 1.00 10s 20 25 30 TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) RDS(ON) limited 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.00 10.00 10 1s 30 20 DC 0.10 10 TJ(Max)=150°C TA=25°C 0 0.01 0.01 0.1 1 VDS (Volts) 10 0.0001 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR OR USES AS CRITICAL D=T /T THE CONSUMER MARKET. APPLICATIONS on COMPONENTS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.01 IN LIFE SUPPORT DEVICES OR SYSTEMS TJ,PK=T A+PDM.ZθJA.RθJA T OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS PRODUCT DESIGN, RθJA=90°C/W RESERVES THE RIGHT TOonIMPROVE T Single Pulse NOTICE. FUNCTIONS AND RELIABILITY WITHOUT 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000