AOL1428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOL1428 is Pb-free (meets ROHS & Sony 259 specifications). AOL1428L is a Green Product ordering option. AOL1428 and AOL1428L are electrically identical. Ultra SO-8TM Top View VDS (V) = 30V ID = 45A (VGS = 10V) RDS(ON) <9.5mΩ (VGS = 10V) RDS(ON) <16mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Fits SOIC8 footprint ! D D S Bottom tab connected to drain G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C Units V ±20 V 49 TC=100°C ID IDM Pulsed Drain Current Continuous Drain Current H Maximum 30 A 34 120 TA=25°C 18 A 14 Avalanche Current C IDSM IAR 30 A Repetitive avalanche energy L=0.3mH C EAR 135 mJ TA=70°C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range 5 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 3 TJ, TSTG t ≤ 10s Steady-State Steady-State W 21 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case 43 PD RθJA RθJC Typ 19 45 2.5 °C Max 25 55 3.5 Units °C/W °C/W °C/W AOL1428 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 120 RDS(ON) Static Drain-Source On-Resistance VDS=5V, ID=20A 40 Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 9.5 11.0 13 DYNAMIC PARAMETERS Ciss Input Capacitance 2.5 uA µA V A VGS=4.5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance 1.9 7.7 TJ=125°C Forward Transconductance Crss 5 0.1 VGS=10V, ID=20A Coss V TJ=55°C VSD Units 1 Zero Gate Voltage Drain Current gFS Max 30 VDS=24V, VGS=0V IDSS IS Typ 0.74 16.0 mΩ mΩ S 1.0 V 46 A 1000 pF 340 pF 100 pF 1.3 Ω 18 nC 8.5 nC 3.1 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.8 nC tD(on) Turn-On DelayTime 5.6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 5.5 ns 18.5 ns 5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 29 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 24 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin a maximum junction temperature of TJ(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. Rev1: May 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 10V 7V VDS=5V 25 90 20 ID(A) ID (A) 4.5V 60 4V 15 125° 10 30 25°C 5 VGS=3.5V 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 1.6 Normalized On-Resistance VGS=4.5V 13 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 15 11 9 VGS=10V 7 5 VGS=10V 1.4 ID=20A 1.2 VGS=4.5 VGS=4.5 1 0.8 VGS=10V 0.6 0 5 10 15 20 25 30 -50 -20 10 40 70 100 130 160 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 30 25 1.0E+00 ID=20A 125°C 1.0E-01 20 IS (A) RDS(ON) (mΩ) 2 125°C 15 10 25°C 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOL1428 10 1500 8 1200 Capacitance (pF) VGS (Volts) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS VDS=15V ID=20A 6 4 2 Ciss 900 600 Coss 300 0 0 5 10 15 Crss 0 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 140 10µs 100µ RDS(ON) limited 10.0 1m 1.0 DC 10ms 0.1 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 120 Power (W) 100.0 ID (Amps) 5 TJ(Max)=175°C TC=25°C 100 80 60 40 1 VDS (Volts) 10 100 20 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc .RθJc RθJC=3.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOL1428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C 50 Power Dissipation (W) ID(A), Peak Avalanche Current 60 40 30 20 10 40 30 20 10 0 0 0.000001 0.00001 0.0001 0.001 0 0.01 25 50 75 100 125 150 175 T CASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 140 100 40 Power (W) Current rating ID(A) 120 20 TJ(Max)=150°C TA=25°C 80 60 40 20 0 0 25 50 75 100 125 150 175 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) T CASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. 100 1000