SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR30 ✪ ISSUE 4 – JUNE 1996 COMPLEMENTARY TYPE – BSR40 PARTMARKING DETAIL – BR1 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb =25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -70 V IC=-100µA V(BR)CEO -60 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA Collector Cut-Off Current ICBO -100 -50 nA µA VCB=-60V VCB=-60V, Tamb=125°C Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.5 V V IC =-150mA, IB=-15mA IC =-500mA, IB=-50mA Base-Emitter Saturation Voltage VBE(sat) -1.0 -1.2 V V IC=-150mA, IB=-15mA IC =-500mA, IB=-50mA Static Forward Current Transfer Ratio hFE 10 40 30 MAX. IC =-100µA, VCE =-5V IC =-100mA, VCE =-5V IC =-500mA, VCE =-5V 120 Collector Capacitance Cc 20 pF VCB =-10V, f =1MHz Emitter Capacitance Ce 120 pF VEB =-0.5V, f =1MHz Transition Frequency fT MHz IC=-50mA, VCE=-10V f =35MHz VCC =-20V, IC =-100mA IB1 =-IB2 =-5mA 100 Turn-On Time Ton 500 ns Turn-Off Time Toff 650 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT551 datasheet. 3 - 65