UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA03R053M Power MOSFET 85A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UNA03R053M is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UNA03R053M is suitable for DC/DC converters in computing, servers, and POL, etc. FEATURES * RDS(ON) < 6.5 mΩ @ VGS=4.5V, ID=20A RDS(ON) < 5.3 mΩ @ VGS=10V, ID=20A * Very low RDS(ON) * Low gate charge * High current capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UNA03R053ML-TA3-T UNA03R053MG-TA3-T UNA03R053ML-TC3-T UNA03R053MG-TC3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-230 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube 1 of 7 QW-R209-106.b UNA03R053M Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-106.b UNA03R053M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 30 V ±20 V TC=25°C 85 A Continuous Drain Current (Note 5) ID TC=100°C 66 A Pulsed Drain Current (Note 4) IDM 322 A TA=25°C 51 A ID Continuous Drain Current TA=70°C 41 A Avalanche Current (Note 4) IAS 60 A Single Pulse Avalanche Energy (Note 7) EAS 600 mJ TC=25°C 83 W PD Power Dissipation (Note 3) TC=100°C 33 W TA=25°C 7.3 W PD Power Dissipation (Note 2) TA=70°C 4.7 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 3. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 4. Single pulse width limited by junction temperature TJ(MAX)=150°C. 5. The maximum current rating is package limited. 6. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient. 7. L=0.33mH, IAS=60A, VDD=50V, RG=25Ω, starting TJ=25°C. 8. ISD≤20A, di/dt≤200A/μs, VDD≤BVDSS, starting TJ=25°C. SYMBOL VDSS VGSS THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient (Note 2) Junction to Ambient (Note 2, 6) Junction-to-Case SYMBOL t≤10s Steady State Steady State UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC MIN TYP 14 40 1.1 MAX 17 55 1.5 UNIT °C/W °C/W °C/W 3 of 7 QW-R209-106.b UNA03R053M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage SYMBOL BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage IGSS VGS(TH) Static Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=30V, VGS=0V VDS=30V, VGS=0V, TJ=55°C VGS=±20V, VDS=0V 30 VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A VDD=10V, ID=12A 1.0 Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=30V, VGS=10V, ID=0.5A Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω Rise Time tR (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current (Note) Diode Forward Voltage VSD IS=1A,VGS=0V Body Diode Reverse Recovery Time trr IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr Note: The maximum current rating is package limited. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 5 100 3.0 5.3 6.5 V µA µA nA 54 V mΩ mΩ S 2719 1204 169 pF pF pF 635 20 50 80 272 1960 1230 nC nC nC ns ns ns ns 0.7 170 580 85 A 1 V ns nC 4 of 7 QW-R209-106.b UNA03R053M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-106.b UNA03R053M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-106.b UNA03R053M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-106.b