Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UNA03R053M
Power MOSFET
85A, 30V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UNA03R053M is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance and low gate charge, etc.
The UTC UNA03R053M is suitable for DC/DC converters in
computing, servers, and POL, etc.

FEATURES
* RDS(ON) < 6.5 mΩ @ VGS=4.5V, ID=20A
RDS(ON) < 5.3 mΩ @ VGS=10V, ID=20A
* Very low RDS(ON)
* Low gate charge
* High current capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UNA03R053ML-TA3-T
UNA03R053MG-TA3-T
UNA03R053ML-TC3-T
UNA03R053MG-TC3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-230
1
G
G
Pin Assignment
2
3
D
S
D
S
Packing
Tube
Tube
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UNA03R053M

Preliminary
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
30
V
±20
V
TC=25°C
85
A
Continuous Drain Current (Note 5)
ID
TC=100°C
66
A
Pulsed Drain Current (Note 4)
IDM
322
A
TA=25°C
51
A
ID
Continuous Drain Current
TA=70°C
41
A
Avalanche Current (Note 4)
IAS
60
A
Single Pulse Avalanche Energy (Note 7)
EAS
600
mJ
TC=25°C
83
W
PD
Power Dissipation (Note 3)
TC=100°C
33
W
TA=25°C
7.3
W
PD
Power Dissipation (Note 2)
TA=70°C
4.7
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The Power dissipation PDSM is based on θJA and the maximum allowed
junction temperature of 150°C. The value in any given application depends on the user's specific board
design.
3. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is
more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
4. Single pulse width limited by junction temperature TJ(MAX)=150°C.
5. The maximum current rating is package limited.
6. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient.
7. L=0.33mH, IAS=60A, VDD=50V, RG=25Ω, starting TJ=25°C.
8. ISD≤20A, di/dt≤200A/μs, VDD≤BVDSS, starting TJ=25°C.

SYMBOL
VDSS
VGSS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 2)
Junction to Ambient (Note 2, 6)
Junction-to-Case
SYMBOL
t≤10s
Steady State
Steady State
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
MIN
TYP
14
40
1.1
MAX
17
55
1.5
UNIT
°C/W
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
IGSS
VGS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VDS=30V, VGS=0V, TJ=55°C
VGS=±20V, VDS=0V
30
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDD=10V, ID=12A
1.0
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=15V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=30V, VGS=10V, ID=0.5A
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
Rise Time
tR
(Note
1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
Current (Note)
Diode Forward Voltage
VSD
IS=1A,VGS=0V
Body Diode Reverse Recovery Time
trr
IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
Note: The maximum current rating is package limited.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
1
5
100
3.0
5.3
6.5
V
µA
µA
nA
54
V
mΩ
mΩ
S
2719
1204
169
pF
pF
pF
635
20
50
80
272
1960
1230
nC
nC
nC
ns
ns
ns
ns
0.7
170
580
85
A
1
V
ns
nC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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