Datasheet

SSF6007
Main Product Characteristics:
VDSS
-50V
RDS(on)
2.1ohm(typ.)
ID
-130mA
6007
SOT-23
Marking and pin
Features and Benefits:


Schematic diagram
Assignment
Advanced MOSFET process technology
Special designed for Line current interrupter in
telephone sets, Relay, high speed and line
transformer drivers and general purpose
applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature



Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance.
These features combine to make this design an extremely efficient and reliable device for use in line current
interrupter in telephone sets and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V①
-130
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V①
-100
IDM
Pulsed Drain Current②
-520
PD @TC = 25°C
Power Dissipation③
230
mW
VDS
Drain-Source Voltage
-50
V
VGS
Gate-to-Source Voltage
± 20
V
ESD
ESD Rating (HBM module)
1
KV
TJ
Operating Junction and Storage Temperature Range
-55 to + 150
°C
TSTG
Units
mA
Thermal Resistance
Symbol
RθJA
Characterizes
Typ.
Max.
Units
Junction-to-ambient (t ≤ 10s) ④
—
556
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
540
℃/W
©Silikron Semiconductor CO.,LTD.
2014.02.10
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Version : 1.1
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SSF6007
Electrical Characterizes @TA=25℃
Symbol
Parameter
V(BR)DSS
unless otherwise specified
Min.
Typ.
Drain-to-Source breakdown voltage
-50
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Max.
Units
—
—
V
VGS = 0V, ID = -10μA
—
2.1
7
Ω
VGS=-10V,ID = -130mA
-0.8
—
-2
V
VDS = VGS, ID = -1mA
—
—
-0.1
Drain-to-Source leakage current
-1
—
—
-50
—
—
10
—
—
-10
Conditions
VDS =-40V,VGS = 0V
μA
VDS =-50V,VGS = 0V
TJ = 125°C
uA
VGS =20V
IGSS
Gate-to-Source forward leakage
gfs
Forward Transconductance
50
—
—
Ciss
Input Capacitance
—
45
—
Coss
Output Capacitance
—
18
—
Crss
Reverse Transfer Capacitance
—
11
—
f = 1 MHz
td(on)
Turn–On Delay Time
—
3.1
—
VDD = –15V;
tr
Rise Time
—
1.3
—
td(off)
Turn–Off Delay Time
—
18
—
tf
Fall Time
—
7.5
—
S
VGS = -20V
VDS =-25 V ID =-130m A
VGS = 0;
pF
ns
VDS = -5 V;
ID = –2.5 A;
RL = 50ohm
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min.
Typ.
Max.
Units
—
—
130
mA
—
—
520
mA
—
—
-1.3
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=-130mA, VGS=0V
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2014.02.10
www.silikron.com
Version : 1.1
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ID,DRAIN CURRENT (AMPS)
ID,DRAIN CURRENT (AMPS)
SSF6007
VDS,DRAIN-TO-SOURCE VOLTAGE(VOLTS)
VG ,GATE-TO-SOURCE VOLTAGE(VOLTS)
Fig 2: Output Curve
ID,DIODE CURRENT (AMPS)
Fig 1: Transfer Characteristics
VSD,DIODE FORWARD VOLTAGE(VOLTS)
Fig 3: Body Diode Forward Curve
ton
tr
V dd
td(on)
Rl
V in
V gs
R gen
D
90%
V out
toff
tf
td(off)
VOUT
90%
INVERTED
10%
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Fig 5: Switching Waveforms
Fig 4: Switching Test Circuit
©Silikron Semiconductor CO.,LTD.
2014.02.10
www.silikron.com
Version : 1.1
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SSF6007
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
NOTES
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
2014.02.10
www.silikron.com
Version : 1.1
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SSF6007
Ordering and Marking Information
Device Marking: 6007
Package (Available)
SOT-23
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/
Inner Box
Units/
Inner Box
Inner Boxes/
Carton Box
Units/
Carton Box
SOT23
3000pcs
10pcs
30000pcs
4pcs
120000pcs
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj= 150℃ @ 80% of
Max VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj= 150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2014.02.10
www.silikron.com
Version : 1.1
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SSF6007
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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Worldwide Sales and Service:
[email protected]
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[email protected]
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Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China
TEL: (86-512) 62560688
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E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2014.02.10
www.silikron.com
Version : 1.1
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