Datasheet

SSF3051G7 Main Product Characteristics:
D
RDS(on)
45mohm(typ.)
ID
-4A
3051G7
-30V
VDSS
G
S
Marking and pin
SOT23-6 Assignment Schematic diagram Features and Benefits:
„
„
„
„
„
Advanced trench MOSFET process technology
Special designed for buttery protection, load
switching and general power management
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications Absolute max Rating:
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
V
ID
-4
A
IDM
-25
A
PD
1.7
W
TJ,TSTG
-55 To 150
℃
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
75
℃/W
Thermal Resistance, Junction-to-Case(Note 2)
RθJC
30
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance
©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com Version : 1.0
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SSF3051G7 Electrical Characterizes @TA=25℃
Parameter
unless otherwise specified
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±25V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.6
-3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-4A
45
51
mΩ
VGS=-4.5V, ID=-3.4A
65
85
mΩ
VDS=-5V,ID=-4A
8.5
S
520
PF
94
PF
73
PF
8.9
nS
OFF CHARACTERISTICS
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
-1
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-15V,ID=-1A
4.0
nS
td(off)
VGS=-10V,RGEN=6Ω
22.6
nS
5.5
nS
7.1
nC
0.86
nC
3.9
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-5V,ID=-4A,
VGS=-5V
DRAIN-SOURCE DIODE CHARACTERISTICS
-1.2
V
-4
A
VSD
Diode Forward Current (Note 2)
IS
Reverse Recovery Time
trr
Tj=25℃,IF=-4A,
10.3
nS
Reverse Recovery Charge
Qrr
di/dt=-100A/uS
4.3
nC
©Silikron Semiconductor CO.,LTD.
VGS=0V,IS=-1.3A
-0.8
Diode Forward Voltage (Note 3)
2011.10.25
www.silikron.com Version :1.0
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SSF3051G7 Test circuits and Waveforms
Switch Waveforms:
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com Version :1.0
page 3 of 9
SSF3051G7 Typical
electrical and thermal characteristics
Figure 1: Typical Output Characteristics Figure 3: Drain-Source On-Resistance
Figure 2: Transfer Characteristics
Figure 4: Drain-Source On-Resistance
Figure 5 : Source- Drain Diode Forward ©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com Figure 6: Rdson vs Vgs
Version :1.0
page 4 of 9
SSF3051G7 PD Power(W)
ID- Drain Current (A)
T J -Junction Temperature(℃)
TJ -Junction Temperature(℃)
Figure 8: Drain Current
Figure 7: Power Dissipation
Figure 9: Gate Charge
Figure 11:
Safe Operation Area
©Silikron Semiconductor CO.,LTD.
Figure 10: Capacitance vs Vds
Figure 12:
2011.10.25
www.silikron.com Single Pulse Maximum Power Dissipation
Version :1.0
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SSF3051G7 Figure 13: Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com Version :1.0
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SSF3051G7 Mechanical Data:
SOT23-6
Dimensions in Millimeters (UNIT:mm)
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com Version :1.0
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SSF3051G7 Ordering and Marking Information
Device Marking: 3051G7
Package (Available)
SOT23-6
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
SOT23-6
Units/
Tube
3000pcs
Tubes/
Inner Box
10pcs
Reliability Test Program
Test Item
Conditions
Units/
Inner Box
30000pcs
Inner Boxes/ Units/
Carton Box Carton Box
4pcs
120000pcs
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
Tj=125℃ or 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com Version :1.0
page 8 of 9
SSF3051G7 ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
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Worldwide Sales and Service:
[email protected]
Technical Support:
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©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com Version :1.0
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