2EDL05x06xx

Eice DR IV ER ™ Co m pac t
High voltage gate driver IC
2E DL fa mi ly
600 V half bridge gate drive IC
2EDL05I06PF
2EDL05I06PJ
2EDL05I06BF
2EDL05N06PF
2EDL05N06PJ
EiceDRIVER™ Compact
Final dat a sheet
<Revision 2.6>, 01.06.2016
Final
Indust rial Po wer C o ntrol
Edition 01.06.2016
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
EiceDRIVER™ Compact
2EDL family
Revision History
Page or Item
Subjects (major changes since previous revision)
<Revision 0.85>, 16.04.2013
all
change term VCC in VDD
pp.16
Introduced Iopk+ and Iopk- values
all
introduced 2EDL05N06PJ
all
introduced 2EDL05I06PJ
<Revision 2.6>, 01.06.2016
o
o
Update maximum Ta from 95 C to 105 C in Table 5
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™,
CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™,
EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™,
PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™,
SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by
AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.
COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™
of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc.
MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE
OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc.
Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of
Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd.
Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc.
TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company
Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments
Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex
Limited.
Last Trademarks Update 2010-10-26
Final datasheet
3
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
Table of Contents
1
Overview ............................................................................................................................................. 7
2
Blockdiagram...................................................................................................................................... 9
3
3.1
3.2
3.2.1
3.2.2
3.2.3
3.3
3.4
3.5
3.6
3.7
3.8
Pin configuration, description, and functionality ......................................................................... 10
Pin Configuration and Description...................................................................................................... 10
Low Side and High Side Control Pins (LIN, HIN) ............................................................................... 10
Input voltage range ............................................................................................................................ 10
Switching levels .................................................................................................................................. 10
Input filter time .................................................................................................................................... 11
VDD and GND .................................................................................................................................... 11
VB and VS (High Side Supplies) ........................................................................................................ 11
LO and HO (Low and High Side Outputs) .......................................................................................... 11
Undervoltage lockout (UVLO) ............................................................................................................ 12
Bootstrap diode .................................................................................................................................. 12
Deadtime and interlock function ......................................................................................................... 12
4
4.1
4.2
4.3
4.4
4.5
4.6
Electrical Parameters ....................................................................................................................... 13
Absolute Maximum Ratings ............................................................................................................... 13
Required operation conditions ........................................................................................................... 14
Operating Range ................................................................................................................................ 14
Static logic function table ................................................................................................................... 15
Static parameters ............................................................................................................................... 15
Dynamic parameters .......................................................................................................................... 17
5
Timing diagrams............................................................................................................................... 18
6
6.1
6.2
Package ............................................................................................................................................. 20
PG-DSO-8 .......................................................................................................................................... 20
PG-DSO-14 ........................................................................................................................................ 21
Final datasheet
4
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Typical Application SO8 / SO14 package 0.5 A .................................................................................. 8
Block diagram for 2EDL05x06Py ......................................................................................................... 9
Pin Configuration of 2EDL family ....................................................................................................... 10
Input pin structure............................................................................................................................... 11
Input filter timing diagram ................................................................................................................... 11
Timing of short pulse suppression ..................................................................................................... 18
Timing of of internal deadtime ............................................................................................................ 18
Input to output propagation delay times and switching times definition ............................................. 18
Operating areas (IGBT UVLO levels)................................................................................................. 19
Operating areas (MOSFET UVLO levels) .......................................................................................... 19
Output pulse width timing and matching delay timing diagram for positive logic ............................... 19
Package drawing ................................................................................................................................ 20
PCB reference layout left: Reference layout right: detail of footprint .............................................. 20
Package drawing ................................................................................................................................ 21
PCB reference layout (according to JEDEC 1s0P) left: Reference layout right: detail of footprint .... 21
Final datasheet
5
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Members of 2EDL family ...................................................................................................................... 7
Pin Description ................................................................................................................................... 10
Abs. maximum ratings ........................................................................................................................ 13
Required Operation Conditions .......................................................................................................... 14
Operating range ................................................................................................................................. 14
Static parameters ............................................................................................................................... 15
Dynamic parameters .......................................................................................................................... 17
Data of reference layout ..................................................................................................................... 20
Data of reference layout ..................................................................................................................... 21
Final datasheet
6
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
EiceDRIVER™ Compact
600 V half bridge gate drive IC
Overview
1
PG-DSO-8
Main features

Thin-film-SOI-technology

Maximum blocking voltage +600V

Individual control circuits for both outputs

Filtered detection of under voltage supply

All inputs clamped by diodes

Active shut down function

Asymmetric undervoltage lockout thresholds for high side and low
PG-DSO-14
side

1
Qualified according to JEDEC (high temperature stress tests for 1000h) for target applications
Product highlights

Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology

Ultra fast bootstrap diode
Typical applications

Home appliances

Consumer electronics

Fans, pumps

General purpose drives
Product family
Table 1
Members of 2EDL family
Sales Name
2EDL05I06PF
Special function
output
current
Target
transistor
typ. LS UVLOthresholds
deadtime, interlock
0.5 A
IGBT
12.5 V / 11.6 V
Bootstrap Package
diode
Yes
2EDL05I06PJ
DSO-14
2EDL05I06BF
–
0.5 A
IGBT
12.5 V / 11.6 V
Yes
DSO-8
2EDL05N06PF
deadtime, interlock
0.5 A
MOSFET
9.1 V / 8.3 V
Yes
DSO-8
2EDL05N06PJ
1
DSO-8
0.5 A
DSO-14
J-STD-020 and JESD-022
Final datasheet
7
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
Description
The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum
blocking voltage of +600V in half bridge configurations. Based on the used SOI-technology there is an excellent
ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic
latch up may occur at all temperature and voltage conditions.
The two independent drivers outputs are controlled at the low-side using two different CMOS resp. LSTTL
compatible signals, down up to 3.3V logic. The device includes an under-voltage detection unit with hysteresis
characteristic which are optimised either for IGBT or MOSFET.
Those parts, which are designed for IGBT have asymmetric undervoltage lockout levels, which support strongly
the integrated ultrafast bootstrap diode. Additionally, the offline gate clamping function provides an inherent
protection of the transistors for parasitic turn-on by floating gate conditions, when the IC is not supplied via VDD.
DC-Bus
VCC
+5V
VB
HO
2EDL05x06yy
VS
VCC
VDD
To
Load
µC
PWM_H
HIN
PWM_L
LIN
GND
LO
To Opamp /
Comparator
GND
- DC-Bus
Figure 1
Typical Application
SO8 / SO14 package 0.5 A
Final datasheet
8
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
2
Figure 2
Blockdiagram
Block diagram for 2EDL05x06Py
Final datasheet
9
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
3
Pin configuration, description, and functionality
3.1
Pin Configuration and Description
2EDL (SO8)
Figure 3
Table 2
2EDL (0.5A, SO14)
2EDL (2.3A, SO14)
1
VDD
VB
8
1
nc
nc 14
1
VDD
nc
14
2
HIN
HO
7
2
VDD
nc 13
2
HIN
nc
13
3
LIN
VS
6
3
HIN
VB 12
3
LIN
VB
12
4
GND
LO
5
4
LIN
HO 11
4
EN-/FLT
HO
11
5
GND
VS 10
5
GND
VS
10
6
LO
nc
9
6
PGND
nc
9
7
nc
nc
8
7
nc
8
LO
Pin Configuration of 2EDL family
Pin Description
Symbol
Description
VDD
Low side power supply
GND
Logic ground
HIN
High side logic input
LIN
Low side logic input
VB
High side positive power supply
HO
High side gate driver output
VS
High side negative power supply
LO
Low side gate driver output
nc
Not Connected
3.2
Low Side and High Side Control Pins (LIN, HIN)
3.2.1
Input voltage range
All input pins have the capability to process input voltages up to the supply voltage of the IC. The inputs are
therefore internally clamped to VDD and GND by diodes. An internal pull-down resistor is high ohmic, so that it
can keep the IC in a safe state in case of PCB crack.
3.2.2
Switching levels
The Schmitt trigger input threshold is such to guarantee LSTTL and CMOS compatibility down to 3.3 V
controller outputs. The input Schmitt trigger and noise filter provide beneficial noise rejection to short input
pulses according to Figure 4 and Figure 5. Please note, that the switching levels of the input structures remain
constant even though they can accept amplitudes up to the IC supply level.
Final datasheet
10
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
2EDL-family
ILIN
IHIN
HINx
LINx
Vcc V ; V
IH
IL
INPUT
NOISE
FILTER
VZ=5.25 V
Figure 4
3.2.3
Input pin structure
Input filter time
a)
b)
tFILIN
tFILIN
HIN
LIN
LIN
high
LO
Figure 5
HO
LO
low
Input filter timing diagram
Short pulses are suppressed by means of an input filter. All IC, which have undervoltage lockout (UVLO)
thresholds for MOSFET, have an input filter time of tFILIN = 75ns typ. and 150ns max. All IC having UVLO
thresholds for IGBT have filter times of tFILIN = 150ns min and 200ns typ.
3.3
VDD and GND
VDD is the low side supply and it provides power to both the input logic and the low side output power stage.
The input logic is referenced to GND ground as well as the under-voltage detection circuit. Output power stage
is also referenced to GND ground.
The undervoltage lockout circuit enables the device to operate at power on when a typical supply voltage higher
than VDDUV+ is present. Please see section 3.6 “Undervoltage lockout”” for further information.
1
A filter time of typ. 1.8µs helps to suppress noise from the UVLO circuit, so that negative going voltage spikes
at the supply pins will avoid parasitic UVLO events.
3.4
VB and VS (High Side Supplies)
VB to VS is the high side supply voltage. The high side circuit can float with respect to GND following the
external high side power device emitter/source voltage. Due to the low power consumption, the floating driver
1
stage can be supplied by bootstrap topology connected to VDD. A filter time of typ. 1.8µs helps to suppress
noise from the UVLO circuit, so that negative going voltage spikes at the supply pins will avoid parasitic UVLO
events.
The under-voltage circuit enables the device to operate at power on when a typical supply voltage higher than
VDDUV+ is present. Please see section 3.6 “Undervoltage lockout” for further information. Details on bootstrap
supply section and transient immunity can be found in application note EiceDRIVER™ 2EDL family: Technical
description.
3.5
LO and HO (Low and High Side Outputs)
Low side and high side power outputs are specifically designed for pulse operation such as gate drive for IGBT
and MOSFET devices. Low side output is state triggered by the respective input, while high side output is edge
triggered by the respective input. In particular, after an undervoltage condition of the VBS supply, a new turn-on
signal (edge) is necessary to activate the high side output. In contrast, the low side outputs switch to the state of
their respective inputs after an undervoltage condition of the VDD supply.
The output current specification IO+ and IO- is defined in a way, which considers the power transistors miller
voltage.This helps to design the gate drive better in terms of the application needs. Nevertheless, the devices
are also characterised for the value of the pulse short circuit value IOpk+ and IOpk–.
Final datasheet
11
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
3.6
Undervoltage lockout (UVLO)
Two different UVLO options are required for IGBT and MOSFET. The types 2EDL05I06Px and 2EDL05I06BF
are designed to drive IGBT. There are higher levels of undervoltage lockout for the low side UVLO than for the
high side. This supports an improved start up of the IC, when bootstrapping is used. The thresholds for the low
side are typically VDDUV+ = 12.5 V (positive going) and VDDUV– = 11.6 V (negative going). The thresholds for the
high side are typically VBSUV+ = 11.6 V (positive going) and VBSUV– = 10.7 V (negative going).
The types 2EDL05N06Px are designed to drive power MOSFET. A similar distinction for the high side and low
side UVLO threshold as for IGBT is not realised here. The IC shuts down all the gate drivers power outputs,
when the supply voltage is below typ. VDDUV- = 8.3 V (min. / max. = 7.5 V / 9 V). The turn-on threshold is typ.
VDDUV+ = 9.1 V (min. / max. = 8.3 V / 9.9 V)
3.7
Bootstrap diode
An ultra fast bootstrap diode is monolithically integrated for establishing the high side supply. The differential
resistor of the diode helps to avoid extremely high inrush currents when charging the bootstrap capacitor
initially.
3.8
Deadtime and interlock function
The IC provides a hardware fixed deadtime. The deadtime is different for the two MOSFET types
(2EDL05N06Px) and for the two IGBT types (2EDL05I06Px). The deadtimes are particularly typ. 380 ns for
IGBT and typ. 75 ns for MOSFET. An additional interlock function prevents the two outputs from being activated
simultaneously.
The part 2EDL05I06BF does not have the deadtime feature and also not the interlock function. Here, the two
outpus can be activated simultaneously.
_________________________________
1
Not subject of production test, verified by characterisation
Final datasheet
12
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
4
Electrical Parameters
4.1
Absolute Maximum Ratings
All voltages are absolute voltages referenced to VGND -potential unless otherwise specified. (Ta=25°C)
Table 3
Abs. maximum ratings
Parameter
Symbol
VS
High side offset voltage(Note 1)
Min.
Max.
Unit
VDD-VBS-6
600
V
VDD -VBS – 50 –
High side offset voltage (tp<500ns, Note 1)
High side offset voltage(Note 1)
VB
High side offset voltage (tp<500ns, Note 1)
VDD – 6
620
VDD – 50
–
20
VB + 0.5
High side floating supply voltage (VB vs. VS) (internally clamped)
VBS
-1
High side output voltage (VHO vs. VS)
VHO
-0.5
Low side supply voltage (internally clamped)
Low side output voltage (VLO vs. VGND)
VDD
-1
VLO
-0.5
Input voltage LIN,HIN
VIN
-0.5
–
–
–
–
VDD + 0.5
0.6
0.85
195
139
W
°C
Power dissipation (to package) (Note 2)
Thermal resistance
(junction to ambient, see section 6)
DSO8
DSO14
DSO8
DSO14
PD
Rth(j-a)
20
VGND + 0.5
Junction temperature (Note 3)
TJ
–
150
Storage temperature
TS
dVS/dt
- 40
–
150
offset voltage slew rate (Note 4)
50
K/W
V/ns
Note :The minimum value for ESD immunity is 1.0kV (Human Body Model). ESD immunity inside pins connected to the low side (VDD, HIN,
LIN, GND, LO) and pins connected inside each high side itself (VB, HO, VS) is guaranteed up to 1.5kV (Human Body Model) respectively.
Note 1 : In case VDD > VB there is an additional power dissipation in the internal bootstrap diode between pins VDD and VB in case of
activated bootstrap diode. Insensitivity of bridge output to negative transient voltage up to –50V is not subject to production test – verified by
design / characterization.
Note 2: Consistent power dissipation of all outputs. All parameters are inside operating range.
Note 3: Qualification stress tests cover a max. junction temperature of 150°C for 1000 h.
Note 4: Not subject of production test, verified by characterisation.
Final datasheet
13
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
4.2
Required operation conditions
All voltages are absolute voltages referenced to VGND -potential unless otherwise specified. (Ta = 25°C)
Table 4
Required Operation Conditions
Parameter
Min.
Max.
Unit
High side offset voltage (Note 1)
Symbol
VB
7
620
V
Low side supply voltage (internally clamped)
VDD
10
20
4.3
Operating Range
All voltages are absolute voltages referenced to VGND -potential unless otherwise specified. (Ta = 25°C)
Table 5
Operating range
Parameter
Symbol
VS
Min.
Max.
High side floating supply offset voltage (VB vs. VDD, statically)
VBDD
VDD VBS -1 500
-1.0
500
High side floating supply voltage (VB vs. VS, Note 1)
VBS
13
17.5
10
High side floating supply offset voltage
IGBT-Types
MOSFET-Types
High side output voltage (VHO vs. VS)
Low side output voltage (VLO vs. VGND)
Low side supply voltage
IGBT-Types
Pulse width for ON or OFF (Note 3)
IGBT-Types
VHO
10
VLO
0
VDD
VDD
13
17.5
10
17.5
VIN
0
17.5
tIN
0.8
–
0.3
–
-40
–
–
105
°C
8.0
6.0
K/W
MOSFET-Types
Ambient temperature
Ta
Thermal coefficient
(junction to top, see section 6)
DSO8
DSO14
V
17.5
VBS
MOSFET-Types
Logic input voltages LIN,HIN (Note 2)
Unit
th(j-top)
µs
Note 1 : Logic operational for VB (VB vs. VGND) > 7.0V
Note 2 : All input pins (HIN, LIN) are internally clamped (see abs. maximum ratings)
Note 3 : The input pulse may not be transmitted properly in case of input pulse width at LIN and HIN below 0.8µs (IGBT types) or 0.3 µs
(MOSFET) respectively
Final datasheet
14
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
4.4
Static logic function table
VDD
VBS
LO
HO
<VDDUV–
X
0
0
15V
<VBSUV–
LIN
0
15V
15V
0
0
15V
15V
0
0
15V
15V
LIN
HIN
all voltages with reference to GND
4.5
Static parameters
VDD = VBS = 15V unless otherwise specified. (Ta = 25°C)
Table 6
Static parameters
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit Test
condition
V
High level input voltage
VIH
1.7
2.1
2.4
Low level input voltage
VIL
0.7
–
–
0.9
VDD -0.45
VB -0.45
1.1
VDD -1
VB -1
–
–
VGND+0.13
VS+0.13
VGND+0.3
VS +0.3
11.8
12.5
13.2
8.3
9.1
9.9
10.9
11.6
12.4
8.3
9.1
9.9
10.9
11.6
12.4
7.5
8.3
9
High level output voltage
LO VOH
HO
LO VOL
HO
Low level output voltage
IO = - 20 mA
IO = 20 mA
VDD supply undervoltage
positive going threshold
IGBT-types
VBS supply undervoltage
positive going threshold
IGBT-types
VDD supply undervoltage
negative going threshold
IGBT-types
VBS supply undervoltage
negative going threshold
IGBT-types
10
10.7
11.7
MOSFET types
7.5
8.3
9
VDD and VBS supply UVLO
hysteresis
IGBT-types
VDDUVH
MOSFET types VBSUVH
ILVS+
High side leakage current betw. VS and
GND
1
ILVS+
High side leakage current betw. VS and
GND
IQBS1
Quiescent current VBS supply (VB only)
0.5
0.9
–
0.5
0.9
–
–
1
12.5
–
10
–
TJ = 125 °C,
VS = 600 V
–
170
300
HO = low
depending on
current types
Quiescent current VBS supply (VB only)
–
170
300
HO = high
depending on
1
VDDUV+
MOSFET types
VBSUV+
MOSFET types
VDDUV–
MOSFET types
VBSUV–
IQBS2
µA
VS = 600V
Not subject of production test, verified by characterisation
Final datasheet
15
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
Table 6
Static parameters
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit Test
condition
mA
current types
VLIN = float.
Quiescent current VDD supply (VDD only)
IQDD1
–
0.3
0.6
Quiescent current VDD supply (VDD only)
IQDD2
–
0.28
0.6
VLIN = 3.3 V,
VHIN=0
Quiescent current VDD supply (VDD only)
IQDD3
–
0.28
0.6
VLIN=0 ,
VHIN=3.3 V
Input bias current
ILIN+
15
35
60
Input bias current
ILIN–
–
0
–
VLIN = 0
Input bias current
IHIN+
15
35
60
VHIN = 3.3 V
Input bias current
IHIN–
–
0
–
VHIN = 0
Mean output current for load capacity
charging in range from 3 V (20%) to 6 V
(40%)
Peak output current turn on (single pulse)
IO+
0.18
0.23
–
IOpk+1
–
0.36
–
IO–
Mean output current for load capacity
discharging in range from 12 V (80%) to 9 V
(60%)
IOpk–1
Peak output current turn off (single pulse)
0.39
0.48
–
–
0.70
–
Bootstrap diode forward voltage between
VDD and VB
Bootstrap diode forward current between
VDD and VB
VF,BSD
–
1.0
1.2
V
RL = 0 , tp
<10 µs
IF = 0.3 mA
IF,BSD
30
55
80
mA
VDD – VB = 4 V
Bootstrap diode resistance
RBSD
20
36
54

VF1 = 4 V, VF2
=5V
1
µA
A
VLIN = 3.3 V
CL = 22 nF
RL = 0 , tp
<10 µs
CL = 22 nF
Not subject of production test, verified by characterisation
Final datasheet
16
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
4.6
Dynamic parameters
VDD = VBS = 15 V, VS = VGND, CL = 180 pF unless otherwise specified. (TA=25°C)
Table 7
Dynamic parameters
Parameter
Symbol
ton
Turn-on propagation delay IGBT types
MOSFET types
toff
Turn-off propagation delay IGBT types
MOSFET types
Values
Min.
Typ.
Max.
280
210
420
310
610
460
260
400
590
200
300
440
Turn-on rise time
tr
–
48
80
Turn-off fall time
tf
–
24
40
tFILIN
Input filter time at LIN/HIN IGBT types
for turn on and off
MOSFET types
HIN
LIN
DT
Dead time
IGBT types
(not for 2EDL05I06BF)
MOSFET types
120
192
–
50
100
100
150
170
250
260
380
540
30
75
140
Dead time matching
abs(DT_LH – DT_HL)
for single IC (not for
2EDL05I06BF)
–
10
80
10
50
IGBT types
MDT
MOSFET types
Matching delay ON, abs(ton_HS - ton_LS)
MTON
–
10
60
Matching delay OFF, abs(toff_HS-toff_LS)
MTOFF
–
10
60
Output pulse width
matching. PW in-PW out
PM
–
20
80
–
20
70
Final datasheet
IGBT types
MOSFET types
17
Unit Test
condition
ns
VLIN/HIN = 0 or
3.3 V
VLIN/HIN = 0 or
3.3 V
CL = 1 nF
VLIN/HIN = 0 &
3.3 V
ns
VLIN/HIN = 0 &
3.3 V
ext. dead time
0ns
external dead
time > 500 ns
external dead
time >500 ns
PW in > 1 µs
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
Timing diagrams
5
tFILIN
HIN/LIN
tFILIN
tIN
tIN
HIN/LIN
tIN < tFILIN
tIN < tFILIN
high
HO/LO
HO/LO
low
tIN
HIN/LIN
tIN
HIN/LIN
tIN > tFILIN
tIN > tFILIN
HO/LO
HO/LO
Figure 6
Timing of short pulse suppression
LIN1,2,3
1.65V
1.65V
HIN1,2,3
12V
HO1,2,3
3V
DT
DT
12 V
LO1,2,3
3V
Figure 7
Timing of of internal deadtime
LIN
1.65V
1.65V
HIN
PWIN
ton
tr
toff
80%
tf
80%
HO
LO
20%
Figure 8
PWOUT
20%
Input to output propagation delay times and switching times definition
Final datasheet
18
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
Figure 9
Operating areas (IGBT UVLO levels)
Figure 10
Operating areas (MOSFET UVLO levels)
HIN/LIN
PWIN
PM = PWIN - PWOUT
PWOUT
HO/LO
HIN/LIN
PWIN
PM = PWIN - PWOUT
MToff
PWOUT
HO/LO
Figure 11
MTon
Output pulse width timing and matching delay timing diagram for positive logic
Final datasheet
19
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
6
Package
6.1
PG-DSO-8
Max. reflow solder temperature:
Max. wave solder temperature:
Figure 12
Package drawing
Figure 13
PCB reference layout
left: Reference layout
right: detail of footprint
265°C acc. JEDEC
245°C acc. JEDEC
The thermal coefficient is used to calculate the junction temperature, when the IC surface temperature is
measured. The junction temperature is
j = Ψth(j-top) ∙  + top
Table 8
Data of reference layout
Dimensions
Material
Metal (Copper)
76.2  114.3  1.5 mm³
FR4 (therm = 0.3 W/mK)
70µm (therm = 388 W/mK)
Final datasheet
20
<Revision 2.6>, 01.06.2016
EiceDRIVER™ Compact
2EDL family
6.2
PG-DSO-14
Max. reflow solder temperature:
Max. wave solder temperature:
Figure 14 Package drawing
Figure 15
265°C acc. JEDEC
245°C acc. JEDEC
PCB reference layout (according to JEDEC 1s0P)
left: Reference layout
right: detail of footprint
The thermal coefficient is used to calculate the junction temperature, when the IC surface temperature is
measured. The junction temperature is
j = Ψth(j-top) ∙  + top
Table 9
Data of reference layout
Dimensions
Material
Metal (Copper)
76.2  114.3  1.5 mm³
FR4 (therm = 0.3 W/mK)
70µm (therm = 388 W/mK)
Final datasheet
21
<Revision 2.6>, 01.06.2016
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
Similar pages