PANASONIC 2SC5931

Power Transistors
2SC5931
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
(23.4)
(4.5)
(2.0)
(1.2)
26.5±0.5
• High breakdown voltage: VCBO ≥ 1 700 V
• High speed switching: tf < 200 ns
• Wide safe operation area
5˚
Unit
Collector-base voltage (Emitter open)
VCBO
1 700
V
Collector-emitter voltage (E-B short)
VCES
1 700
V
Collector-emitter voltage (Base open)
VCEO
600
V
Emitter-base voltage (Collector open)
VEBO
7
V
Base current
IB
7.5
A
Collector current
IC
15
A
Peak collector current *
ICP
25
A
Collector power dissipation
PC
60
W
0.7±0.1
5.45±0.3
10.9±0.5
5˚
1
2
5.5±0.3
Rating
5˚
1.1±0.1
3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
(2.0)
Symbol
3.3±0.3
Parameter
5˚
(4.0)
2.0±0.2
18.6±0.5
(2.0)
Solder Dip
■ Absolute Maximum Ratings TC = 25°C
Ta = 25°C
5˚
(10.0)
■ Features
3.0±0.3
5˚
φ 3.2±0.1
22.0±0.5
15.5±0.5
Marking Symbol: C5931
Internal Connection
3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
C
B
Note) *: Non-repetitive peak collector current
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Collector-base cutoff current (Emitter open)
ICBO
Conditions
Min
Typ
Max
Unit
VCB = 1 000 V, IE = 0
50
µA
VCB = 1 700 V, IE = 0
1
mA
50
µA
10

Emitter-base cutoff current (Collector open)
IEBO
VEB = 7 V, IC = 0
Forward current transfer ratio
hFE
VCE = 5 V, IC = 7.5 A
Collector-emitter saturation voltage
VCE(sat)
IC = 7.5 A, IB = 1.88 A
3
V
Base-emitter saturation voltage
VBE(sat)
IC = 7.5 A, IB = 1.88 A
1.5
V
5
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
Storage time
tstg
IC = 7.5 A, Resistance loaded
2.7
µs
IB1 = 1.88 A, IB2 = −3.75 A
0.2
µs
Fall time
tf
3
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00314AED
1
2SC5931
PC  Ta
Safe operation area
100
(1) TC = Ta
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) Without heat sink
80
10
70
60
50
(1)
40
30
DC
1
10−1
fH = 64 kHz, TC < 90°C
A.S.O for a single
pulse load caused by
EHT flash over during
horizontal operation.
30
25
20
15
10
5
(2)
(3)
0
IC
35
10−2
20
10
0
25
50
75
100
125
Ambient temperature Ta (°C)
2
ICP
Collector current IC (A)
Collector power dissipation PC (W)
90
Safe operation area (Horizontal operation)
Non repetitive pulse, TC = 25°C
t = 100 µs
t=
t=
10 ms
1 ms
Collector current IC (A)
100
150
10−3
1
10
100
1 000
Collector-emitter voltage VCE (V)
SJD00314AED
0
< 1 mA
0
500
1 000
1 500
2 000
Collector-emitter voltage VCE (V)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP