Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAS716
Low-leakage diode
Product data sheet
2003 Nov 07
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS716
FEATURES
PINNING
• Plastic SMD package
PIN
;
• Low leakage current: typ. 0.2 nA
• Switching time: typ. 0.6 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
1
cathode
2
anode
handbook, halfpage1
APPLICATION
• Low leakage current applications in surface mounted
circuits.
DESCRIPTION
2
Top view
MAM408
Marking code: S1.
The marking bar indicates the cathode.
DESCRIPTION
Epitaxial medium-speed switching diode with a low
leakage current in an ultra small SOD523 (SC-79) SMD
plastic package.
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
−
BAS716
DESCRIPTION
VERSION
plastic surface mounted package; 2 leads
SOD523
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
85
V
−
75
V
−
200
mA
−
500
mA
tp = 1 µs
−
4
A
tp = 1 ms
−
1
A
tp = 1 s
−
0.5
A
−
250
mW
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to surge;
see Fig.4
see Fig.2; note 1
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on a FR4 printed-circuit board.
2003 Nov 07
2
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS716
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
TYP.
MAX.
UNIT
IF = 1 mA
0.77
0.9
V
IF = 10 mA
0.85
1
V
IF = 50 mA
0.92
1.1
V
IF = 150 mA
1.02
1 .25
V
VR = 75 V
0.2
5
nA
VR = 75 V; Tj = 150 °C
3
80
nA
VR = 100 V
0.3
−
nA
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.6
2
−
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA
0.6
3
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
450
K/W
Rth j-s
thermal resistance from junction to soldering point
note 2
120
K/W
Notes
1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions.
2. Soldering point of the cathode tab.
2003 Nov 07
3
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS716
GRAPHICAL DATA
MHC323
300
MLB752 - 1
300
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
200
100
100
(1)
(2)
(3)
0
0
0
100
Tamb (°C)
0
200
0.8
1.2
V F (V)
1.6
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on a FR4 printed-circuit board.
Fig.2
0.4
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Nov 07
4
104
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS716
MDB826
102
handbook, halfpage
MDB827
2.0
handbook, halfpage
Cd
(pF)
IR
(nA)
(1)
1.5
10
1.0
(2)
1
0.5
10−1
0
50
100
150
Tj (°C)
0
200
0
VR = 75 V.
(1) Maximum values.
(2) Typical values.
Fig.5
5
10
15 V (V) 20
R
f = 1 MHz; Tj = 25 °C.
Reverse current as a function of junction
temperature.
Fig.6
handbook, full pagewidth
tr
Diode capacitance as a function of reverse
voltage; typical values.
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2003 Nov 07
t rr
5
output signal
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS716
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v M A
HE
A
D
1
E
0
0.5
1 mm
scale
2
DIMENSIONS (mm are the original dimensions)
bp
(1)
UNIT
A
bp
c
D
E
HE
v
mm
0.65
0.58
0.34
0.26
0.17
0.11
1.25
1.15
0.85
0.75
1.65
1.55
0.1
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
2003 Nov 07
REFERENCES
IEC
JEDEC
JEITA
SC-79
6
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
02-12-13
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS716
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
2003 Nov 07
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
7
NXP Semiconductors
Customer notification
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made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
R76/01/pp8
Date of release: 2003 Nov 07
Document order number: 9397 750 11999
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