2SA2029M3 D

2SA2029M3
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOT−723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
•
•
•
•
•
•
•
Reduces Board Space
High hFE, 210 −460 (Typical)
Low VCE(sat), < 0.5 V
ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
Available in 4 mm, 8000 / Tape & Reel
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
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PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
−60
Vdc
Collector−Emitter Voltage
V(BR)CEO
−50
Vdc
Emitter−Base Voltage
V(BR)EBO
−6.0
Vdc
IC
−100
mAdc
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
265
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
−55 ~ + 150
°C
Collector Current − Continuous
1
BASE
2
EMITTER
MARKING
DIAGRAM
SOT−723
CASE 631AA
THERMAL CHARACTERISTICS
Rating
F9 M
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
F9 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Package
Shipping†
2SA2029M3T5G
SOT−723
(Pb−Free)
8000 / Tape &
Reel
NSV2SA2029M3T5G
SOT−723
(Pb−Free)
8000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 5
1
Publication Order Number:
2SA2029M3/D
2SA2029M3
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
−
−
Vdc
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
−
−
Vdc
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
−
−
Vdc
ICBO
−
−
−0.5
nA
IEBO
−
−
−0.1
Characteristic
Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0)
Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0)
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
−
−
−0.5
120
−
560
−
140
−
−
3.5
−
hFE
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
−
fT
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz)
COB
mA
Vdc
MHz
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
2SA2029M3
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
IC/IB = 10
TA = 25°C
TA = 150°C
0.1
IC/IB = 10
1.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1
TA = −55°C
1
0.9
TA = −55°C
0.8
TA = 25°C
0.7
0.6
0.5
TA = 150°C
0.4
0.3
0.01
0.1
1.0
10
100
0.2
0.1
1000
100
1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 2. Base−Emitter Saturation Voltage vs.
Collector Current
TA = 150°C
TA = 25°C
TA = −55°C
100
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
2.0
VCE = 6 V
hFE, DC CURRENT GAIN
10
Figure 1. Collector−Emitter Saturation Voltage
vs. Collector Current
1000
10
0.1
1.0
10
100
1000
TA = 25°C
IC = 100 mA
1.8
IC = 50 mA
1.6
1.4
IC = 30 mA
1.2
1.0
IC = 10 mA
0.8
0.6
0.4
0.2
0
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Saturation Region
1
100
100
VCE = 2 V
0.9
TA = −55°C
0.8
0.7
C, CAPACITANCE (pF)
VBE(ON), BASE−EMITTER ON VOLTAGE (V)
1.0
TA = 25°C
0.6
0.5
TA = 150°C
0.4
Cibo
10
Cobo
0.3
0.2
0.1
1.0
10
100
1000
1
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 5. Base−Emitter Turn−ON Voltage vs.
Collector Current
Figure 6. Capacitance
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3
100
2SA2029M3
TYPICAL ELECTRICAL CHARACTERISTICS
1000
VCE = −2 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
ftau, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
1000
100
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
1000
100 ms
100
10 ms
1s
10
1
1.0
Figure 7. Current Gain Bandwidth Product vs.
Collector Current
Thermal
Limit
Single Pulse Test at TA = 25°C
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area
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4
100
2SA2029M3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
HE
2
2X
2X
b
e
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
1
3X
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
RECOMMENDED
SOLDERING FOOTPRINT*
L2
BOTTOM VIEW
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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2SA2029M3/D
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