1HP04CH D

1HP04CH
Small Signal MOSFET
–100V, 18Ω, –170mA, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• High Voltage (100V)
• 4V drive
• High Speed Switching and Low Loss
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
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VDSS
RDS(on) Max
18Ω@ −10V
−100V
21Ω@ −4V
ID Max
−170mA
ELECTRICAL CONNECTION
P-Channel
Typical Applications
• Lithium-ion Battery Charging and Discharging Cell Balance
3
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−100
Gate to Source Voltage
VGSS
ID
±20
V
−170
mA
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
−680
mA
Power Dissipation
When mounted on ceramic substrate
2
(900mm × 0.8mm)
PD
0.6
W
Junction Temperature
Tj
150
°C
MARKING
TL
ORDERING INFORMATION
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
RθJA
© Semiconductor Components Industries, LLC, 2015
October 2015 - Rev. 1
2
PACKING TYPE : TL
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Junction to Ambient
When mounted on ceramic substrate
2
(900mm × 0.8mm)
1 : Gate
2 : Source
3 : Drain
1
WX
Drain Current (DC)
V
LOT No.
Parameter
Unit
208
1
See detailed ordering and shipping
information on page 5 of this data sheet.
°C/W
Publication Order Number :
1HP04CH/D
1HP04CH
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
Forward Transconductance
IGSS
VGS(th)
gFS
Static Drain to Source On-State
Resistance
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Gate Threshold Voltage
Conditions
Value
min
ID=−1mA, VGS=0V
VDS=−100V, VGS=0V
VGS=±16V, VDS=0V
−100
VDS=−10V, ID=−100μA
−1.2
typ
max
V
−1
μA
±10
μA
−2.6
VDS=−10V, ID=−80mA
170
ID=−80mA, VGS=−10V
12.5
18
14
21
ID=−40mA, VGS=−4V
Unit
V
mS
Ω
Ω
14
pF
2.8
pF
Crss
0.9
pF
td(on)
21
ns
Rise Time
tr
18
ns
Turn-OFF Delay Time
td(off)
200
ns
Fall Time
tf
81
ns
Total Gate Charge
Qg
0.9
nC
0.14
nC
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
VDS=−20V, f=1MHz
See specified Test Circuit
VDS=−50V, VGS=−10V, ID=−170mA
0.27
nC
VSD
Forward Diode Voltage
IS=−170mA, VGS=0V
−0.88
−1.2
V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VDD= --50V
VIN
0V
--10V
ID= --80mA
RL=612.5Ω
VOUT
VIN
D
PW≤10μs
D.C.≤1%
G
P.G
Rg
1HP04CH
50Ω
S
Rg=3kΩ
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2
1HP04CH
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3
1HP04CH
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4
1HP04CH
PACKAGE DIMENSIONS
unit : mm
CPH3
CASE 318BA
ISSUE O
Recommended
Soldering Footprint
1 : Gate
2 : Source
0.6
2.4
1.4
3 : Drain
0.95
0.95
ORDERING INFORMATION
Device
1HP04CH-TL-W
Marking
WX
Package
CPH3
SC-59, SOT-23, TO-236
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the 1HP04CH is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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