1HP04CH Small Signal MOSFET –100V, 18Ω, –170mA, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • High Voltage (100V) • 4V drive • High Speed Switching and Low Loss • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 18Ω@ −10V −100V 21Ω@ −4V ID Max −170mA ELECTRICAL CONNECTION P-Channel Typical Applications • Lithium-ion Battery Charging and Discharging Cell Balance 3 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Symbol Value Unit Drain to Source Voltage VDSS −100 Gate to Source Voltage VGSS ID ±20 V −170 mA Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −680 mA Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.6 W Junction Temperature Tj 150 °C MARKING TL ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter Symbol Value RθJA © Semiconductor Components Industries, LLC, 2015 October 2015 - Rev. 1 2 PACKING TYPE : TL Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) 1 : Gate 2 : Source 3 : Drain 1 WX Drain Current (DC) V LOT No. Parameter Unit 208 1 See detailed ordering and shipping information on page 5 of this data sheet. °C/W Publication Order Number : 1HP04CH/D 1HP04CH ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current Forward Transconductance IGSS VGS(th) gFS Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Gate Threshold Voltage Conditions Value min ID=−1mA, VGS=0V VDS=−100V, VGS=0V VGS=±16V, VDS=0V −100 VDS=−10V, ID=−100μA −1.2 typ max V −1 μA ±10 μA −2.6 VDS=−10V, ID=−80mA 170 ID=−80mA, VGS=−10V 12.5 18 14 21 ID=−40mA, VGS=−4V Unit V mS Ω Ω 14 pF 2.8 pF Crss 0.9 pF td(on) 21 ns Rise Time tr 18 ns Turn-OFF Delay Time td(off) 200 ns Fall Time tf 81 ns Total Gate Charge Qg 0.9 nC 0.14 nC Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VDS=−20V, f=1MHz See specified Test Circuit VDS=−50V, VGS=−10V, ID=−170mA 0.27 nC VSD Forward Diode Voltage IS=−170mA, VGS=0V −0.88 −1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD= --50V VIN 0V --10V ID= --80mA RL=612.5Ω VOUT VIN D PW≤10μs D.C.≤1% G P.G Rg 1HP04CH 50Ω S Rg=3kΩ www.onsemi.com 2 1HP04CH www.onsemi.com 3 1HP04CH www.onsemi.com 4 1HP04CH PACKAGE DIMENSIONS unit : mm CPH3 CASE 318BA ISSUE O Recommended Soldering Footprint 1 : Gate 2 : Source 0.6 2.4 1.4 3 : Drain 0.95 0.95 ORDERING INFORMATION Device 1HP04CH-TL-W Marking WX Package CPH3 SC-59, SOT-23, TO-236 (Pb-Free / Halogen Free) Shipping (Qty / Packing) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the 1HP04CH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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