CPH3355 D

CPH3355
Power MOSFET
–30V, 156mΩ, –2.5A, Single P-Channel
Features
www.onsemi.com
Electrical Connection
• On-resistance RDS(on)1=120mΩ (typ)
• 4V drive
• Halogen free compliance
P-Channel
3
Specifications
1
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
–30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
–2.5
A
IDP
–10
A
PD
1.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
2
Packing Type:TL
Marking
When mounted on ceramic substrate
WM
(900mm2×0.8mm)
LOT No.
Power Dissipation
TL
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter
Symbol
Value
Unit
Junction to Ambient
When mounted on ceramic substrate
RθJA
125
°C/W
(900mm2×0.8mm)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
December 2014 - Rev. 3
1
Publication Order Number :
CPH3355/D
CPH3355
Electrical Characteristics at Ta = 25°C
Value
Parameter
Symbol
Conditions
Unit
min
typ
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=–1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=–30V, VGS=0V
–1
μA
Gate to Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Gate Threshold Voltage
VGS(th)
VDS=–10V, ID=–1mA
–2.6
V
Forward Transconductance
gFS
VDS=–10V, ID=–1A
1.9
RDS(on)1
ID=–1A, VGS=–10V
120
156
mΩ
RDS(on)2
ID=–0.5A, VGS=–4.5V
187
262
mΩ
RDS(on)3
ID=–0.5A, VGS=–4V
213
299
mΩ
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
–30
V
–1.2
S
172
pF
51
pF
Crss
36
pF
Turn-ON Delay Time
td(on)
4.5
ns
Rise Time
tr
4.2
ns
Turn-OFF Delay Time
td(off)
20
ns
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
VDS=−10V, f=1MHz
See specified Test Circuit
VDS=−15V, VGS=−10V, ID=−2.5A
10.6
ns
3.9
nC
0.6
nC
0.8
IS=−2.5A, VGS=0V
–0.86
nC
−1.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--10V
VIN
VDD= --15V
ID= --1A
RL=15Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
CPH3355
50Ω
S
www.onsemi.com
2
CPH3355
www.onsemi.com
3
CPH3355
www.onsemi.com
4
CPH3355
Package Dimensions
CPH3355-TL-H/ CPH3355-TL-W
CPH3
CASE 318BA
ISSUE O
Unit : mm
1 : Gate
2 : Source
3 : Drain
2.4
1.4
Recommended Soldering
Footprint
0.6
0.95
0.95
ORDERING INFORMATION
Device
Package
Shipping
CPH3355-TL-H
CPH3, SC-59
SOT-23, TO-236
3,000
pcs. / reel
CPH3355-TL-W
Note
Pb-Free
and
Halogen Free
Note on usage : Since the CPH3355 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
www.onsemi.com
5
Similar pages