BAS16HT1 D

BAS16H, SBAS16H
Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
CATHODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
100
Vdc
Peak Forward Current
IF
200
mAdc
IFSM(surge)
500
mAdc
Repetitive Peak Forward Current
(Note 2)
IFRM
1.0
A
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t=1s
IFSM
Non−Repetitive Peak Forward Surge
Current, 60 Hz
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2
ANODE
2
1
SOD−323
CASE 477
STYLE 1
A
MARKING DIAGRAM
36.0
18.0
6.0
3.0
0.7
A6 M
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A6
M
= Specific Device Code
= Date Code
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
200
mW
1.57
mW/°C
RqJA
635
°C/W
TJ, Tstg
−55 to
150
°C
ORDERING INFORMATION
Device
1. FR-4 Minimum Pad.
2. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ = 25°C prior to surge.
Package
Shipping†
BAS16HT1G
SOD−323
(Pb−Free)
3000 / Tape & Reel
SBAS16HT1G
SOD−323
(Pb−Free)
3000 /T ape & Reel
BAS16HT3G
SOD−323
(Pb−Free)
10000 / Tape & Reel
SBAS16HT3G
SOD−323
(Pb−Free)
10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 12
1
Publication Order Number:
BAS16HT1/D
BAS16H, SBAS16H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−
−
−
1.0
50
30
100
−
−
−
−
−
715
855
1000
1250
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
mAdc
IR
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
2.0
pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR
−
1.75
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
trr
−
6.0
ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc,
RL = 500 W)
QS
−
45
pC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BAS16H, SBAS16H
820 W
+10 V
2.0 k
IF
100 mH
tr
0.1 mF
tp
IF
t
trr
10%
t
0.1 mF
90%
D.U.T.
50 W INPUT
SAMPLING
OSCILLOSCOPE
50 W OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10
100
IR , REVERSE CURRENT (μA)
IF, FORWARD CURRENT (mA)
TA = 150°C
TA = 85°C
10
TA = -40°C
1.0
TA = 25°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (V)
0
1.2
Figure 2. Forward Voltage
10
20
30
40
VR, REVERSE VOLTAGE (V)
Figure 3. Leakage Current
40
0.68
Based on square wave currents
TJ = 25°C prior to surge
35
0.64
30
25
IFSM (A)
CD, DIODE CAPACITANCE (pF)
50
0.60
20
15
0.56
10
5
0.52
0
2
4
6
0
0.0001
8
0.001
0.01
0.1
1
VR, REVERSE VOLTAGE (V)
Tp (mSec)
Figure 4. Capacitance
Figure 5. Maximum Non−repetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
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3
10
BAS16H, SBAS16H
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A1
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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4
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BAS16HT1/D
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