BAS16L, SBAS16L Switching Diode Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 CATHODE MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 100 V Peak Forward Current IF 200 mA IFSM(surge) 500 mA Repetitive Peak Forward Current (Note 3) IFRM 1.0 A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s IFSM Non−Repetitive Peak Forward Surge Current 60 Hz 1 ANODE 3 MARKING DIAGRAM 1 A 36.0 18.0 6.0 3.0 0.7 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 A6 M G G SOT−23 CASE 318 STYLE 8 1 A6 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C RqJA PD 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25°C prior to surge. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 11 1 ORDERING INFORMATION Device Package Shipping† BAS16LT1G SOT−23 (Pb−Free) 3000/Tape & Reel BAS16LT3G SOT−23 (Pb−Free) 10000/Tape & Reel SBAS16LT1G SOT−23 (Pb−Free) 3000/Tape & Reel SBAS16LT3G SOT−23 (Pb−Free) 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAS16LT1/D BAS16L, SBAS16L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − − 1.0 50 30 100 − − − − − 715 855 1000 1250 Unit OFF CHARACTERISTICS mAdc IR Reverse Voltage Leakage Current (VR = 100 V) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR − 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W) trr − 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W) QS − 45 pC 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAS16L, SBAS16L 10 100 150°C IR , REVERSE CURRENT (μA) 125°C 10 85°C 55°C 1.0 25°C -55°C -40°C 0.1 125°C 1.0 85°C 0.1 55°C 0.01 25°C 0.01 0.1 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) 0.9 1.0 50 20 30 40 VR, REVERSE VOLTAGE (V) 10 0 1.1 Figure 2. VF vs. IF Figure 3. IR vs. VR 0.62 Cap 0.60 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 150°C 0.58 0.56 0.54 0.52 0.50 0.48 0 1 2 4 3 5 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance http://onsemi.com 3 6 7 8 60 70 BAS16L, SBAS16L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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