BAS16LT1 D

BAS16L, SBAS16L
Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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3
CATHODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
100
V
Peak Forward Current
IF
200
mA
IFSM(surge)
500
mA
Repetitive Peak Forward Current
(Note 3)
IFRM
1.0
A
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t=1s
IFSM
Non−Repetitive Peak Forward Surge
Current 60 Hz
1
ANODE
3
MARKING
DIAGRAM
1
A
36.0
18.0
6.0
3.0
0.7
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
A6 M G
G
SOT−23
CASE 318
STYLE 8
1
A6
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
RqJA
PD
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ = 25°C prior to surge.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 11
1
ORDERING INFORMATION
Device
Package
Shipping†
BAS16LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
BAS16LT3G
SOT−23
(Pb−Free)
10000/Tape & Reel
SBAS16LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
SBAS16LT3G
SOT−23
(Pb−Free)
10000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAS16LT1/D
BAS16L, SBAS16L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−
−
−
1.0
50
30
100
−
−
−
−
−
715
855
1000
1250
Unit
OFF CHARACTERISTICS
mAdc
IR
Reverse Voltage Leakage Current
(VR = 100 V)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
2.0
pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR
−
1.75
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
trr
−
6.0
ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)
QS
−
45
pC
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAS16L, SBAS16L
10
100
150°C
IR , REVERSE CURRENT (μA)
125°C
10
85°C
55°C
1.0
25°C
-55°C
-40°C
0.1
125°C
1.0
85°C
0.1
55°C
0.01
25°C
0.01
0.1
0.001
0.2
0.3
0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
0.9
1.0
50
20
30
40
VR, REVERSE VOLTAGE (V)
10
0
1.1
Figure 2. VF vs. IF
Figure 3. IR vs. VR
0.62
Cap
0.60
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
150°C
0.58
0.56
0.54
0.52
0.50
0.48
0
1
2
4
3
5
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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3
6
7
8
60
70
BAS16L, SBAS16L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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For additional information, please contact your local
Sales Representative
BAS16LT1/D
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