2N6387 D

2N6387, 2N6388
Plastic Medium-Power
Silicon Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
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Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc
•
•
•
•
VCEO(sus) = 60 Vdc (Min) − 2N6387
= 80 Vdc (Min) − 2N6388
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc − 2N6387, 2N6388
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
TO−220AB Compact Package
These Devices are Pb−Free and are RoHS Compliant*
DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 − 80 VOLTS
4
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N6387
2N6388
VCEO
60
80
Vdc
Collector−Base Voltage
2N6387
2N6388
VCB
60
80
Vdc
VEB
5.0
Vdc
Collector Current − Continuous
− Peak
IC
10
15
Adc
Base Current
IB
250
mAdc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
65
0.52
W
W/°C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/°C
TJ, Tstg
−65 to +150
°C
Emitter−Base Voltage
Operating and Storage Junction,
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
Max
Unit
RqJC
1.92
_C/W
RqJA
62.5
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
2N638xG
AYWW
2N638x = Device Code
x = 7 or 8
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
2N6387G
TO−220
(Pb−Free)
50 Units / Rail
2N6388G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
2N6387/D
PD, POWER DISSIPATION (WATTS)
2N6387, 2N6388
TA
4.0
TC
80
3.0
60
TC
2.0
40
1.0
20
TA
0
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
60
80
−
−
−
−
1.0
1.0
−
−
−
−
300
300
3.0
3.0
−
5.0
1000
100
20,000
−
−
−
2.0
3.0
−
−
2.8
4.5
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
2N6387
2N6388
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
2N6387
2N6388
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE − 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N6387
2N6388
2N6387
2N6388
Vdc
ICEO
mAdc
mAdc
ICEX
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
ON CHARACTERISTICS (Note 3)
hFE
DC Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc)
(IC = 1 0 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
2N6387, 2N6388
Collector−Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
2N6387, 2N6388
2N6387, 2N6388
Base−Emitter On Voltage
(IC = 5.0 Adc, VCE = 3.0 Vdc)
(IC = 10 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
2N6387, 2N6388
−
VCE(sat)
Vdc
VBE(on)
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
|hfe|
20
−
−
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
200
pF
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
1000
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
2N6387, 2N6388
VCC
+ 30 V
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
RC
SCOPE
TUT
RB
V1
APPROX
+ 12 V
0
51
V2
-8V
[ 8.0 k
[ 120
- 4.0 V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
25 ms
APPROX
D1
tr, tf v 10 ns
DUTY CYCLE = 1.0%
Figure 2. Switching Times Test Circuit
7.0
5.0
3.0
ts
t, TIME (s)
μ
tf
1.0
0.7
0.3
0.2
0.1
0.07
0.1
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
td
0.5
2.0
1.0
IC, COLLECTOR CURRENT (AMPS)
5.0
10
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 3. Switching Times
1.0
0.7
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
ZqJC (t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
Figure 4. Thermal Response
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3
20
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500 1.0 k
2N6387, 2N6388
20
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
IC, COLLECTOR CURRENT (AMPS)
10 ms
5.0
50 ms
1 ms
dc
2.0
50 ms
5 ms
1.0
TJ = 150°C
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 100°C
SECOND BREAKDOWN LIMITED
0.2
0.1
CURVES APPLY BELOW RATED VCEO
0.03
1.0
2N6387
2N6388
40
10
20
2.0
4.0 6.0
60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80
Figure 5. Active-Region Safe Operating Area
300
TJ = 25°C
5000
3000
2000
200
C, CAPACITANCE (pF)
hFE, SMALL-SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
100
50
30
20
10
Cob
100
Cib
70
50
1.0
2.0
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
30
0.1
500 1000
0.2
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
20,000
VCE = 4.0 V
hFE, DC CURRENT GAIN
10,000
TJ = 150°C
3000
2000
25°C
1000
-55°C
500
300
200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
100
Figure 7. Capacitance
Figure 6. Small−Signal Current Gain
5000
50
5.0 7.0 10
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
Figure 8. DC Current Gain
0.5 0.7
1.0
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
Figure 9. Collector Saturation Region
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4
20 30
2N6387, 2N6388
θV, TEMPERATURE COEFFICIENTS (mV/°C)
3.0
V, VOLTAGE (VOLTS)
TJ = 25°C
2.5
2.0
1.5
1.0
0.5
0.1
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
0.2 0.3
0.5 0.7
1.0
2.0 3.0
+ 5.0
+ 4.0
+ 3.0
[email protected] + 4.0V
3
25°C to 150°C
+ 2.0
+ 1.0
*qVC for VCE(sat)
-55°C to 25°C
0
- 1.0
- 2.0
- 3.0
25°C to 150°C
qVB for VBE
-55°C to 25°C
- 4.0
- 5.0
0.1
5.0 7.0 10
*IC/IB ≤
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
105
IC, COLLECTOR CURRENT (A)
μ
REVERSE
FORWARD
COLLECTOR
104
103
VCE = 30 V
102
BASE
TJ = 150°C
101
100
[ 8.0 k
[ 120
100°C
25°C
10-1
-0.6 -0.4 -0.2
0
+0.2 +0.4
+0.6 +0.8
EMITTER
+1.0 +1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
Figure 13. Darlington Schematic
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5
2N6387, 2N6388
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
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2N6387/D
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