1PMT5.0AT3 D

1PMT5.0AT1G/T3G Series
Zener Transient
Voltage Suppressor
POWERMITE® Package
The 1PMT5.0AT1G/T3G Series is designed to protect voltage
sensitive components from high voltage, high energy transients.
Excellent clamping capability, high surge capability, low Zener
impedance and fast response time. The advanced packaging
technique provides for a highly efficient micro miniature, space
saving surface mount with its unique heatsink design. The
POWERMITE has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles (1.1 mm) in the industry. Because of its small size, it
is ideal for use in cellular phones, portable devices, business
machines, power supplies and many other industrial/consumer
applications.
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PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 − 58 V
200 W PEAK POWER
1
2
Specification Features:
1: CATHODE
2: ANODE
• Stand−off Voltage: 5.0 V − 58 V
• Peak Power − 200 W @ 1 ms (1PMT5.0A − 1PMT36A)
•
•
•
•
•
•
•
•
•
•
•
•
− 175 W @ 1 ms (1PMT40A − 1PMT58A)
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile − Maximum Height of 1.1 mm
Integral Heatsink/Locking Tabs
Full Metallic Bottom Eliminates Flux Entrapment
Small Footprint − Footprint Area of 8.45 mm2
POWERMITE is JEDEC Registered as DO−216AA
Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes
Cathode Indicated by Polarity Band
These Devices are Pb−Free and are RoHS Compliant
1
POWERMITE
CASE 457
2
MARKING DIAGRAM
1
CATHODE
M
Mxx
Mechanical Characteristics:
G
M
MxxG
2
ANODE
= Date Code
= Specific Device Code
(See Table on Page 3)
= Pb−Free Package
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MOUNTING POSITION: Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
ORDERING INFORMATION
Device
Package
Shipping†
1PMTxxAT1G
POWERMITE
(Pb−Free)
3,000/Tape & Reel
1PMTxxAT3G
POWERMITE 12,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 10
1
Publication Order Number:
1PMT5.0AT3/D
1PMT5.0AT1G/T3G Series
MAXIMUM RATINGS
Symbol
Value
Unit
Maximum Ppk Dissipation, (PW−10/1000 ms) (Note 1) (1PMT5.0A − 1PMT36A)
Rating
Ppk
200
W
Maximum Ppk Dissipation, (PW−10/1000 ms) (Note 1) (1PMT40A − 1PMT58A)
Ppk
175
W
Maximum Ppk Dissipation, (PW−8/20 ms) (Note 1)
Ppk
1000
W
°PD°
500
4.0
248
°mW
mW/°C
°C/W
DC Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
RqJA
Thermal Resistance, Junction−to−Lead (Anode)
RqJanode
35
°C/W
Maximum DC Power Dissipation (Note 3)
Thermal Resistance, Junction−to−Tab (Cathode)
°PD°
RqJcathode
3.2
23
W
°C/W
TJ, Tstg
−55 to +150
°C
Operating and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse at TA = 25°C.
2. Mounted with recommended minimum pad size, DC board FR−4.
3. At Tab (Cathode) temperature, Ttab = 75°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
I
otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 35 A)
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IF
Parameter
VC VBR VRWM
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
IR VF
IT
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
IPP
Uni−Directional TVS
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2
V
1PMT5.0AT1G/T3G Series
ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA)
VRWM
VBR @ IT (V) (Note 6)
IT
IR @ VRWM
VC @ IPP
IPP (A)
Device*
Marking
(Note 5)
Min
Nom
Max
(mA)
(mA)
(V)
(Note 7)
1PMT5.0AT1G, T3G
MKE
5.0
6.4
6.7
7.0
10
50
9.2
21.7
1PMT7.0AT1G, T3G
MKM
7.0
7.78
8.2
8.6
10
30
12
16.7
1PMT12AT1G, T3G
MLE
12
13.3
14.0
14.7
1.0
1.0
19.9
10.1
1PMT16AT1G, T3G
MLP
16
17.8
18.75
19.7
1.0
1.0
26
7.7
1PMT18AT1G, T3G
MLT
18
20.0
21.0
22.1
1.0
1.0
29.2
6.8
1PMT22AT1G, T3G
MLX
22
24.4
25.6
26.9
1.0
1.0
35.5
5.6
1PMT24AT1G, T3G
MLZ
24
26.7
28.1
29.5
1.0
1.0
38.9
5.1
1PMT26AT1G, T3G
MME
26
28.9
30.4
31.9
1.0
1.0
42.1
4.8
1PMT28AT1G, T3G
MMG
28
31.1
32.8
34.4
1.0
1.0
45.4
4.4
1PMT30AT1G, T3G
MMK
30
33.3
35.1
36.8
1.0
1.0
48.4
4.1
1PMT33AT1G, T3G
MMM
33
36.7
38.7
40.6
1.0
1.0
53.3
3.8
1PMT36AT1G, T3G
MMP
36
40.0
42.1
44.2
1.0
1.0
58.1
3.4
1PMT40AT1G, T3G
MMR
40
44.4
46.8
49.1
1.0
1.0
64.5
2.7
1PMT48AT1G, T3G
MMX
48
53.3
56.1
58.9
1.0
1.0
77.4
2.3
1PMT51AT1G, T3G
MMZ
51
56.7
59.7
62.7
1.0
1.0
82.4
2.1
1PMT58AT1G, T3G
MNG
58
64.4
67.8
71.2
1.0
1.0
93.6
1.9
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater
than the DC or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at ambient temperature of 25°C.
7. Surge current waveform per Figure 2 and derate per Figure 4.
*The “G’’ suffix indicates Pb−Free package.
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3
1PMT5.0AT1G/T3G Series
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
Vin
VL
TYPICAL CHARACTERISTICS
10,000
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
OF IRSM.
100
1000
PEAK VALUE - IRSM
VALUE (%)
PP, PEAK POWER (WATTS)
tr
I
HALF VALUE - RSM
2
50
100
tr≤ 10 ms
tP
0
10
1.0
% OF PEAK PULSE CURRENT
1000
10,000
3
4
Figure 2. 10 X 1000 ms Pulse Waveform
160
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
60
HALF VALUE IRSM/2 @ 20 ms
50
40
tP
20
10
140
120
100
80
60
40
20
0
0
2
Figure 1. Pulse Rating Curve
70
0
1
t, TIME (ms)
80
30
0
tP, PULSE WIDTH (ms)
PEAK VALUE IRSM @ 8 ms
tr
90
100
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25° C
100
10
20
40
60
80
0
25
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
t, TIME (ms)
Figure 4. Pulse Derating Curve
Figure 3. 8 X 20 ms Pulse Waveform
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4
150
1PMT5.0AT1G/T3G Series
TYPICAL CHARACTERISTICS
DERATING FACTOR
0.5
0.3
3
2.5
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
2
TL
1.5
1 ms
0.03
100 ms
0.02
0.01
P D , MAXIMUM POWER DISSIPATION (W)
3.5
1
0.7
0.5
10 ms
0.1 0.2
0.5
1
2
5
10
20
1
50 100
0
25
75
100
125
150
175
T, TEMPERATURE (°C)
D, DUTY CYCLE (%)
Figure 5. Typical Derating Factor for Duty Cycle
Figure 6. Steady State Power Derating
10,000
1.2
1.0
C, CAPACITANCE (pF)
V F, TYPICAL FORWARD VOLTAGE (VOLTS)
50
0.8
0.6
0.4
1000
MEASURED @ ZERO BIAS
MEASURED @ 50% VRWM
100
0.2
0
−55
25
85
10
150
1
T, TEMPERATURE (°C)
10
WORKING PEAK REVERSE VOLTAGE (VOLTS)
Figure 7. Forward Voltage
Figure 8. Capacitance versus Working Peak
Reverse Voltage
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5
100
1PMT5.0AT1G/T3G Series
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE F
F
0.08 (0.003)
C
−A−
J
M
T B
S
C
S
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.15 (0.006) PER SIDE.
DIM
A
B
C
D
F
H
J
K
L
R
S
PIN 1
−B−
K
PIN 2
R
L
J
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.75
2.05 0.069
0.081
1.75
2.18 0.069
0.086
0.85
1.15 0.033
0.045
0.40
0.69 0.016
0.027
0.70
1.00 0.028
0.039
-0.05
+0.10 -0.002 +0.004
0.10
0.25 0.004
0.010
3.60
3.90 0.142
0.154
0.50
0.80 0.020
0.031
1.20
1.50 0.047
0.059
0.50 REF
0.019 REF
D
H
−T−
0.08 (0.003)
M
T B
S
C
S
SOLDERING FOOTPRINT*
0.635
0.025
2.67
0.105
0.762
0.030
2.54
0.100
1.27
0.050
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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6
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1PMT5.0AT3/D
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