SUP40N10-30 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 40 0.034 at VGS = 6 V 37.5 • TrenchFET® Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-220AB D G G D S Top View S Ordering Information: SUP40N10-30 SUP40N10-30-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TA = 25 °Cc Operating Junction and Storage Temperature Range ID Unit V 40 23 IDM 75 IAS 35 EAS 61 A mJ b PD 107 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mountc Free Air Junction-to-Case (Drain) RthJA RthJC 40 62.5 °C/W 1.4 Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72135 S-71662-Rev. C, 06-Aug-07 www.vishay.com 1 SUP40N10-30 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 125 °C 50 VDS = 80 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) Drain-Source On-State Resistancea 4 rDS(on) 75 0.024 0.030 VGS = 6 V, ID = 10 A 0.026 0.034 VGS = 10 V, ID = 15 A, TJ = 125 °C Forward Transconductance gfs VDS = 15 V, ID = 15 A nA µA A VGS = 10 V, ID = 15 A 0.054 VGS = 10 V, ID = 15 A, TJ = 175 °C a V Ω 0.067 10 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c 2400 VGS = 0 V, VDS = 25 V, f = 1 MHz 90 35 Gate-Source Charge Qgs Gate-Drain Chargec Qgd 9 Rg 1.7 Gate Resistance Turn-On Delay Time c Rise Timec Turn-Off Delay Timec Fall Timec VDS = 50 V, VGS = 10 V, ID = 40 A td(on) tr td(off) pF 270 VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω tf 60 nC 11 Ω 11 20 12 20 30 45 12 20 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 40 Pulsed Current ISM 75 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr IF = 30 A, di/dt = 100 A/µs A 1.0 1.5 V 60 100 ns 5 8 A 0.15 0.4 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72135 S-71662-Rev. C, 06-Aug-07 SUP40N10-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 75 75 VGS = 10 thru 6 V 60 I D - Drain Current (A) I D - Drain Current (A) 60 45 5V 30 15 45 30 TC = 125 °C 15 25 °C 4V - 55 °C 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 100 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 80 25 °C 60 125 °C 40 20 0.04 VGS = 6 V VGS = 10 V 0.02 0.00 0 0 15 30 45 60 0 75 15 30 45 60 75 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 3000 V GS - Gate-to-Source Voltage (V) Ciss 2400 C - Capacitance (pF) 0.06 1800 1200 600 Crss Coss VDS = 50 V ID = 40 A 16 12 8 4 0 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72135 S-71662-Rev. C, 06-Aug-07 100 0 10 20 30 40 50 60 70 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUP40N10-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.5 VGS = 10 V ID = 15 A I S - Source Current (A) r DS(on) - On-Resistance (Normalized) 2.0 1.5 1.0 TJ = 150 °C 10 TJ = 25 °C 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 130 1000 Drain-Source Breakdown Voltage (V) ID = 10 mA I Dav (A) 100 IAV (A) at TA = 25 °C 10 1 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (Sec) Avalanche Current vs. Time www.vishay.com 4 1 125 120 115 110 105 100 95 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain-Source Breakdown Voltage vs. Junction Temperature Document Number: 72135 S-71662-Rev. C, 06-Aug-07 SUP40N10-30 Vishay Siliconix THERMAL RATINGS 1000 50 Limited by rDS(on) 40 I D - Drain Current (A) I D - Drain Current (A) 100 30 20 10 µs 100 µs 10 1 ms 10 ms 1 10 0 0 25 50 75 100 125 150 0.1 0.1 175 TC - Ambient Temperature (°C) DC, 100 ms TC = 25 °C Single Pulse 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72135. Document Number: 72135 S-71662-Rev. C, 06-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1