SUM110N03-04P Vishay Siliconix New Product N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0042 @ VGS = 10 V 110 0.0065 @ VGS = 4.5 V 77 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Optimized for Low-Side Synchronous Rectifier Operation New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS D DC/DC Converters D Synchronous Rectifier D TO-263 G G D S Top View S Ordering Information: SUM110N03-04P SUM110N03-04P-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 100_C Pulsed Drain Current Symbol Limit VDS 30 VGS "20 ID IDM Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_Cc Operating Junction and Storage Temperature Range V 110 88 300 IAR 55 EAR 151 PD Unit 120b 3.75 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case PCB Mountc RthJA 40 RthJC 1.25 _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72366 S-32523—Rev. B, 08-Dec-03 www.vishay.com 1 SUM110N03-04P Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 30 V, VGS = 0 V, TJ = 125_C 50 VDS = 30 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 120 VGS = 10 V, ID = 20 A Drain Source On-State Drain-Source On State Resistancea rDS(on) gfs 0.0033 nA mA m 0.0042 0.0063 VGS = 10 V, ID = 20 A, TJ = 175_C 0.0076 VDS = 15 V, ID = 20 A V A VGS = 10 V, ID = 20 A, TJ = 125_C 0.0052 VGS = 4.5 V, ID = 20 A Forward Transconductancea 3.0 W 0.0065 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate-Resistance 5100 860 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 430 Rg 0.5 1.0 1.7 60 Total Gate Chargeb Qg 40 Gate-Source Chargeb Qgs 18 Gate-Drain Chargeb Qgd 16 Turn-On Delay Timeb td(on) 12 20 12 20 40 60 10 15 Rise Timeb Turn-Off Delay Timeb Fall Timeb tr td(off) VDS = 15 V,, VGS = 4.5 V,, ID = 50 A VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W tf W nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current IS 100 Pulsed Current ISM 300 Forward Voltagea VSD Reverse Recovery Time trr A IF = 30 A, VGS = 0 V 1.2 1.5 V IF = 50 A, di/dt = 100 A/ms 40 80 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72366 S-32523—Rev. B, 08-Dec-03 SUM110N03-04P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 120 250 VGS = 10 thru 5 V 100 I D − Drain Current (A) I D − Drain Current (A) 200 150 4V 100 50 80 60 40 TC = 125_C 20 0 0 2 4 25_C 3V 2V 6 8 0 0.0 10 VDS − Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 −55_C 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 180 0.010 TC = −55_C r DS(on) − On-Resistance ( W ) 150 g fs − Transconductance (S) 25_C 120 125_C 90 60 30 0 0.008 0.006 VGS = 4.5 V VGS = 10 V 0.004 0.002 0.000 0 20 40 60 80 100 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 5000 4000 3000 2000 Coss 1000 Crss 0 0 100 80 100 Gate Charge 10 7000 6000 80 ID − Drain Current (A) Capacitance 8000 60 VDS = 15 V ID = 50 A 8 6 4 2 0 6 12 18 24 VDS − Drain-to-Source Voltage (V) Document Number: 72366 S-32523—Rev. B, 08-Dec-03 30 0 20 40 60 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM110N03-04P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) r DS(on) − On-Resistance (W) (Normalized) 1.6 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A I S − Source Current (A) 1.8 1.4 1.2 1.0 TJ = 150_C TJ = 25_C 10 0.8 0.6 −50 −25 0 25 50 75 100 125 150 1 175 0 0.3 TJ − Junction Temperature (_C) 40 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) Drain-Source Voltage Breakdown vs. Junction Temperature ID = 1.0 mA V (BR)DSS (V) 38 36 34 32 30 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) www.vishay.com 4 Document Number: 72366 S-32523—Rev. B, 08-Dec-03 SUM110N03-04P Vishay Siliconix New Product THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 1000 120 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 ms 100 100 ms I D − Drain Current (A) I D − Drain Current (A) 100 80 60 40 10 ms dc, 100 ms 1 20 0 TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 1 VDS − Drain-to-Source Voltage (V) TC − Case Temperature (_C) Normalized Effective Transient Thermal Impedance 1 ms 10 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Document Number: 72366 S-32523—Rev. B, 08-Dec-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1