BYP25A05

BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6
BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6
Silicon-Press-Fit-Diodes – High Temperature Diodes
Silizium-Einpress-Dioden – Hochtemperatur-Dioden
Version 2014-08-18
Nominal Current
Nennstrom
Ø 12.75
Ø 11±0.5
50 ... 600 V
Metal press-fit case with plastic cover
Metall-Einpressgehäuse mit Plastik-Abdeckung
28.5 min
Rändel 0.8
knurl 0.8
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
4.2+0.3
9.3±0.2
1.3
25 A
Dimensions - Maße [mm]
Weight approx.
Gewicht ca.
10 g
Compound has classification UL94V-0
Vergussmasse nach UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Grenzwerte
Type / Typ
Wire to / Draht an
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Anode
Cathode
BYP25A05
BYP25K05
50
60
BYP25A1
BYP25K1
100
120
BYP25A2
BYP25K2
200
240
BYP25A3
BYP25K3
300
360
BYP25A4
BYP25K4
400
480
BYP25A6
BYP25K6
600
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 150°C
IFAV
25 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
90 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
270/300 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
375 A2s
Tj
TS
-50...+215°C
-50...+215°C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6
Characteristics
Kennwerte
Forward Voltage
Durchlass-Spannung
Tj = 25°C
IF = 25 A
VF
< 1.1 V
Leakage Current
Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 100 µA
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
< 1 K/W
Maximum pressing force
Maximaler Einpressdruck
Fpmax
4 kN
120
103
[%]
[A]
100
Tj = 125°C
102
80
Tj = 25°C
10
60
40
1
20
IF
IFAV
0
10-1
0
TC 50
100
150
200
[°C]
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
270a-(25a-1,1v)
0.4
VF
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
103
[A]
102
îF
10
1
© Diotec Semiconductor AG
10
102
[n]
103
Peak forward surge current versus number of cycles at 50 Hz
Durchlass-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
http://www.diotec.com/
2
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