-20 V, -4.2 A, Single P-Channel, TSOP-6

NTGS3443B
Power MOSFET
-20 V, -4.2 A, Single P-Channel, TSOP-6
Features
•Low RDS(on) in TSOP-6 Package
•2.5 V Gate Rating
•Fast Switching
•This is a Pb-Free Device
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V(BR)DSS
RDS(ON) MAX
ID MAX
60 mW @ -4.5 V
-3.7 A
90 mW @ -2.7 V
-3.1 A
100 mW @ -2.5 V
-3.0 A
Applications
•Optimized for Battery and Load Management Applications in
-20 V
Portable Equipment
•Li Ion Battery Linear Mode Charging
•High Side Load Switch
•HDD Switching Circuits, Camera Phone, etc.
P-Channel
1 2 5 6
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
VDSS
-20
V
Gate-to-Source Voltage
VGS
$12
V
ID
-3.7
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
-2.7
tv5s
TA = 25°C
-4.2
Steady
State
PD
Power Dissipation
(Note 2)
Pulsed Drain Current
MARKING
DIAGRAM
1.25
W
TSOP-6
CASE 318G
STYLE 1
1.6
TA = 25°C
Steady
State
4
A
TA = 25°C
tv5s
Continuous Drain
Current (Note 2)
3
ID
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
-2.7
A
-2.0
PD
0.7
W
IDM
-15
A
TJ,
TSTG
-55 to
150
°C
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size.
(Cu area = 1.127 in sq [2 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size.
(Cu area = 0.0775 in sq)
1
SB MG
G
1
SB
= Device Code
M
= Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 5 4
1
2
3
Drain Drain Gate
ORDERING INFORMATION
Device
NTGS3443BT1G
Package
Shipping†
TSOP-6 3000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 0
1
Publication Order Number:
NTGS3443B/D
NTGS3443B
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction-to-Ambient – Steady State (Note 3)
Parameter
RqJA
100
Junction-to-Ambient – t v 5 s (Note 3)
RqJA
80
Junction-to-Ambient – Steady State (Note 4)
RqJA
190
Unit
°C/W
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = -250 mA
-20
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ID = -250 mA, Reference 25°C
IDSS
VGS = 0 V,
VDS = -20 V
V
-15
mV/°C
TJ = 25°C
-1.0
TJ = 70°C
-5.0
IGSS
VDS = 0 V, VGS = ±12 V
VGS(TH)
VGS = VDS, ID = -250 mA
mA
$0.1
mA
-1.4
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain-to-Source On Resistance
Forward Transconductance
VGS(TH)/TJ
-0.6
3.3
RDS(on)
gFS
mV/°C
VGS = -4.5 V, ID = -3.7 A
45
60
VGS = -2.7 V, ID = -3.1 A
65
90
VGS = -2.5 V, ID = -3.0 A
70
100
VDS = -10 V, ID =-3.7 A
7.0
S
819
pF
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
103
Total Gate Charge
QG(TOT)
8.0
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
2.4
RG
11
Gate Resistance
VGS = 0 V, f = 1 MHz, VDS = -10 V
VGS = -4.5 V, VDS = -10 V;
ID = -3.7 A
157
11
nC
0.6
1.7
W
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
10
15
tr
7.0
11
47
70
25
40
-0.8
-1.2
V
15
30
ns
VGS = -4.5 V, VDD = -10 V,
ID = -1.0 A, RG = 6.0 W
td(OFF)
tf
ns
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = -1.7 A
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = -1.7 A
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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2
TJ = 25°C
NTGS3443B
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
-4.5 V
20
-3.5 V
TJ = 25°C
-3 V
-4 V
16
-ID, DRAIN CURRENT (AMPS)
-ID, DRAIN CURRENT (AMPS)
20
-2.5 V
12
8
-2 V
4
-1.5 V
1
3
4
5
10
8
6
0.12
0.08
0.04
0.00
1
2
1.5
3
2.5
1.5
2.5
2
3
3.5
4
4.5
5
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.20
TJ = 25°C
0.18
0.16
0.14
VGS = -2.5 V
0.12
VGS = -2.7 V
0.10
0.08
VGS = -4.5 V
0.06
0.04
0.02
0.00
4
0
8
12
16
20
-ID, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
1.5
1200
ID = -3.7 A
VGS = -4.5 V
1000
C, CAPACITANCE (pF)
RDS(on), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
TJ = -55°C
Figure 2. Transfer Characteristics
0.16
1.3
1.2
1.1
1.0
0.9
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
800
600
400
Coss
200
0.8
0.7
-50
TJ = 125°C
2
Figure 1. On-Region Characteristics
ID = -3.7 A
TJ = 25°C
1.4
TJ = 25°C
4
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.20
1
14
12
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
2
16
0
0.5
0
0
VDS = -5 V
18
Crss
0
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
20
NTGS3443B
12
QT
6
10
-VGS
-VDS
5
8
4
6
3
QGS
QGD
4
2
VDS = -10 V
ID = -3.7 A
TJ = 25°C
1
2
0
0
0
2
6
4
30
-I S, SOURCE CURRENT (AMPS)
7
-V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-V GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
TJ = 25°C
TJ = 150°C
1.0
0.0
10
8
VGS = 0 V
0.2
0.4
0.8
0.6
1.0
1.4
1.2
-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
1.4
60
ID = -250 mA
1.2
50
POWER (WATTS)
0.8
0.6
0.4
0.0
-50
40
30
20
10
0.2
-25
0
25
50
75
100
125
0
0.001
150
0.1
0.01
1
10
100
SINGLE PULSE TIME (s)
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Threshold Voltage
100
-ID, DRAIN CURRENT (A)
-VGS(th) (V)
1.0
10
100 ms
1 ms
1
10 ms
VGS = -12 V
SINGLE PULSE
0.1 TC = 25°C
RDS(on) LIMIT
dc
Thermal Limit
Package Limit
0.01
0.1
1
10
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
1000
R(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE NORMALIZED (°C/W)
NTGS3443B
1
Duty Cycle = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
0.01
0.0001
Test Type = 1 sq in 2 oz
RqJA = 1 sq in 2 oz
t1
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.001
0.01
0.1
PULSE TIME (s)
1
Figure 12. FET Thermal Response
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5
10
100
1000
NTGS3443B
PACKAGE DIMENSIONS
TSOP-6
CASE 318G-02
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
5
4
2
3
E
HE
1
b
e
q
c
A
0.05 (0.002)
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
-
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
-
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
DIM
A
A1
b
c
D
E
e
L
HE
q
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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NTGS3443B/D
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