Phototransistors PNA1605F (PN116) Silicon planar type Unit: mm For optical control systems 1.5±0.2 4.5±0.15 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-emitter voltage (Base open) VCEO 20 V VCBO 30 V Emitter-collector voltage (Base open) VECO 5 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 10 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C Not soldered 2.0 0.8±0.1 3-0.45±0.2 0.45±0.2 1.27 Parameter Collector-base voltage (Emitter open) 1.6±0.15 (2.4) 3.9±0.25 12.5 min. • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 70° (typ.) • Fast response: tr , tf = 8 µs (typ.) • Side-view type package 3.5±0.15 10 min. ■ Features 2.1±0.15 1.27 1 2 3 1: Emitter 2: Collector 3: Base LSTFR103-001 Package ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICE(L) VCE = 10 V, L = 100 lx ICEO VCE = 10 V 0.05 Peak emission wavelength λp VCE = 10 V 900 nm Half-power angle θ The angle from which photocurrent becomes 50% 70 ° Rise time *2 tr VCC = 10 V, ICE(L) = 1 mA, RL = 100 Ω Fall time *2 tf Photocurrent *1 Dark current Collector-emitter saturation voltage *1 VCE(sat) 0.2 ICE(L) = 1 mA, L = 1 000 lx 0.8 mA 2.00 µA 8 µs 9 µs 0.3 0.6 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit Sig. in VCC (Input pulse) 50 Ω Sig. out (Output pulse) RL 90% 10% td: Delay time tr: Rise time tf: Fall time td tr tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHE00003BED 1 PNA1605F PC Ta ICE(L) VCE 10 100 Ta = 25°C 900 lx T = 2 856 K 80 60 40 700 lx 600 lx 6 500 lx 4 400 lx 300 lx 2 20 VCE = 10 V Ta = 25°C T = 2 856 K 103 800 lx 8 Photocurrent ICE(L) (mA) Collector power dissipation PC (mW) L = 1 000 lx ICE(L) L Photocurrent ICE(L) (mA) 120 102 10 1 10−1 200 lx 100 lx 0 −20 0 20 40 60 80 0 100 0 4 8 ICEO Ta 20 10−2 24 102 VCE = 10 V 103 104 Spectral sensitivity characteristics 100 VCE = 10 V L = 100 lx T = 2 856 K 10 10−2 Relative sensitivity ∆S (%) Photocurrent ICE(L) (mA) −1 10 1 10−3 20 40 60 80 10−1 −40 100 0 VCE = 10 V Ta = 25°C 20 20 0 200 120 400 600 800 1 000 1 200 Wavelength λ (nm) tr ICE(L) tf ICE(L) VCC = 10 V Ta = 25°C 103 VCC = 10 V Ta = 25°C 103 50° 102 60° 70° 80° 90° Rise time tr (µs) 40 Relative sensitivity ∆S (%) 60 40 30° 40° 100 80 20° 80 60 Ambient temperature Ta (°C) Directivity characteristics 0° 10° 40 102 RL = 1 kΩ Fall time tf (µs) 0 Ambient temperature Ta (°C) 500 Ω 10 100 Ω 1 10−1 10−2 −2 10 RL = 1 kΩ 500 Ω 10 100 Ω 1 10−1 10−1 1 10 Photocurrent ICE(L) (mA) 2 102 10 80 1 10−4 −20 1 Illuminance L (lx) ICE(L) Ta 10 Dark current ICEO (µA) 16 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 102 12 SHE00003BED 102 10−2 −2 10 10−1 1 10 Photocurrent ICE(L) (mA) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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