Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
PESDxL2UM series
Low capacitance double ESD
protection diode
Product data sheet
Supersedes data of 2003 Aug 05
2005 May 23
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
PESDxL2UM series
FEATURES
DESCRIPTION
• Uni-directional ESD protection of two lines or
bi-directional ESD protection of one line
Low capacitance ESD protection diode in a three pad
SOT883 leadless ultra small plastic package designed to
protect up to two transmission or data lines from
ElectroStatic Discharge (ESD) damage.
• Reverse standoff voltage 3.3 and 5 V
• Low diode capacitance
• Ultra low leakage current
PINNING
• Leadless ultra small SOT883 surface mount package
(1 × 0.6 × 0.5 mm)
• Board space 1.17
mm2
PIN
(approx. 10% of SOT23)
DESCRIPTION
1
cathode 1
• ESD protection >15 kV
2
cathode 2
• IEC 61000-4-2; level 4 (ESD); 15 kV (air) or
8 kV (contact).
3
common anode
APPLICATIONS
• Cellular handsets and accessories
• Portable electronics
• Computers and peripherals
Top view
1
2
• Communication systems
2
• Audio and video equipment.
3
3
1
MARKING
Bottom view
TYPE NUMBER
PESD3V3L2UM
F2
PESD5V0L2UM
F1
2005 May 23
MLE220
MARKING CODE
Fig.1 Simplified outline (SOT883) and symbol.
2
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
PESDxL2UM series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
Ipp
8/20 µs pulse; notes 1, 2 and 3
peak pulse current
PESD3V3L2UM
−
3
A
PESD5V0L2UM
−
2.5
A
Ppp
peak pulse power
8/20 µs pulse; notes 1, 2 and 3
−
30
W
IFSM
non-repetitive peak forward current
tp = 1 ms; square pulse
−
3.5
A
IZSM
non-repetitive peak reverse current
tp = 1 ms; square pulse
−
0.9
A
PESD3V3L2UM
−
0.8
A
Ptot
total power dissipation
Tamb = 25 °C; note 4
−
250
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 1 ms; square pulse; see Fig.4
−
6
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
ESD
electrostatic discharge
IEC 61000-4-2 (contact discharge)
15
−
kV
HBM MIL-Std 883
10
−
kV
PESD5V0L2UM
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
4. Device mounted on standard printed-circuit board.
ESD standards compliance
IEC 61000-4-2, level 4 (ESD)
>15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3
>4 kV
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
all diodes loaded; note 1
500
K/W
one diode loaded; note 2
290
K/W
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
2. FR4 single-sided copper 1 cm2.
2005 May 23
3
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
PESDxL2UM series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
−
1
1.2
V
PESD3V3L2UM
−
−
3.3
V
PESD5V0L2UM
−
−
5
V
VF
forward voltage
VRWM
reverse stand-off voltage
IRM
V(CL)R
reverse leakage current
PESD3V3L2UM
VR = 3.3 V
−
75
300
nA
PESD5V0L2UM
VR = 5 V
−
5
25
nA
Ipp = 1 A; notes 1 and 2
−
−
8
V
Ipp = 3 A; notes 1 and 2
−
−
12
V
Ipp = 1 A; notes 1 and 3
−
−
9
V
Ipp = 3 A; notes 1 and 3
−
−
13
V
Ipp = 1 A; notes 1 and 2
−
−
10
V
Ipp = 2.5 A; notes 1 and 2
−
−
13
V
Ipp = 1 A; notes 1 and 3
−
−
11
V
Ipp = 2.5 A; notes 1 and 3
−
−
15
V
PESD3V3L2UM
5.32
5.6
5.88
V
PESD5V0L2UM
6.46
6.8
7.14
V
−
1.3
−
mV/K
−
2.9
−
mV/K
PESD3V3L2UM
−
−
200
Ω
PESD5V0L2UM
−
−
100
Ω
f = 1 MHz; VR = 0
−
22
28
pF
f = 1 MHz; VR = 5
−
12
17
pF
f = 1 MHz; VR = 0
−
16
19
pF
f = 1 MHz; VR = 5
−
8
11
pF
clamping voltage
PESD3V3L2UM
PESD5V0L2UM
VBR
SZ
IF = 200 mA
breakdown voltage
temperature coefficient
8/20 µs pulse
IZ = 1 mA
IZ = 1 mA
PESD3V3L2UM
PESD5V0L2UM
rdiff
Cd
differential resistance
IR = 1 mA
diode capacitance
PESD3V3L2UM
PESD5V0L2UM
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
2005 May 23
4
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
MLE215
10
PESDxL2UM series
MLE216
26
Cd
handbook, halfpage
handbook, halfpage
IZSM
(A)
(pF)
22
18
PESD3V3L2UM
1
PESD3V3L2UM
14
PESD5V0L2UM
PESD5V0L2UM
10
10−1
10−2
10−1
1
tp (ms)
6
10
1
0
2
3
4
5
VR (V)
Tj = 25 °C; f = 1 MHz.
Fig.2
Non-repetitive peak reverse current as a
function of pulse time (square pulse).
Fig.3
MLE217
102
handbook, halfpage
Diode capacitance as a function of reverse
voltage; typical values.
MLE218
120
handbook, halfpage
Ipp
(%)
PZSM
100 % Ipp; 8 µs
(W)
80
e−t
PESD3V3L2UM
10
50 % Ipp; 20 µs
PESD5V0L2UM
40
1
10−2
10−1
1
tp (ms)
0
10
0
10
20
30
t (µs)
40
PZSM = VZSM x IZSM.
VZSM is the non-repetitive peak reverse voltage at IZSM.
Fig.4
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
2005 May 23
Fig.5
5
8/20 µs pulse waveform according to
IEC 61000-4-5.
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
handbook, full pagewidth
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
PESDxL2UM series
4 GHz DIGITAL
OSCILLOSCOPE
10 ×
ATTENUATOR
50 Ω
CZ
note 1
1
2
D.U.T
PESDxL2UM
Note 1: IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
3
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
GND2
PESD5V0L2UM
PESD3V3L2UM
GND
GND1
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
Fig.6 ESD clamping test set-up and waveforms.
2005 May 23
6
MLE219
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
PESDxL2UM series
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
2005 May 23
REFERENCES
IEC
JEDEC
JEITA
SC-101
7
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
PESDxL2UM series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2005 May 23
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
R76/02/pp9
Date of release: 2005 May 23
Document order number: 9397 750 15162
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