Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
PESDxL2UM series
Low capacitance double ESD
protection diode
Product data sheet
Supersedes data of 2003 Aug 05
2005 May 23
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
PESDxL2UM series
FEATURES
DESCRIPTION
• Uni-directional ESD protection of two lines or
bi-directional ESD protection of one line
Low capacitance ESD protection diode in a three pad
SOT883 leadless ultra small plastic package designed to
protect up to two transmission or data lines from
ElectroStatic Discharge (ESD) damage.
• Reverse standoff voltage 3.3 and 5 V
• Low diode capacitance
• Ultra low leakage current
PINNING
• Leadless ultra small SOT883 surface mount package
(1 × 0.6 × 0.5 mm)
• Board space 1.17
mm2
PIN
(approx. 10% of SOT23)
DESCRIPTION
1
cathode 1
• ESD protection >15 kV
2
cathode 2
• IEC 61000-4-2; level 4 (ESD); 15 kV (air) or
8 kV (contact).
3
common anode
APPLICATIONS
• Cellular handsets and accessories
• Portable electronics
• Computers and peripherals
Top view
1
2
• Communication systems
2
• Audio and video equipment.
3
3
1
MARKING
Bottom view
TYPE NUMBER
PESD3V3L2UM
F2
PESD5V0L2UM
F1
2005 May 23
MLE220
MARKING CODE
Fig.1 Simplified outline (SOT883) and symbol.
2
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
PESDxL2UM series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
Ipp
8/20 µs pulse; notes 1, 2 and 3
peak pulse current
PESD3V3L2UM
−
3
A
PESD5V0L2UM
−
2.5
A
Ppp
peak pulse power
8/20 µs pulse; notes 1, 2 and 3
−
30
W
IFSM
non-repetitive peak forward current
tp = 1 ms; square pulse
−
3.5
A
IZSM
non-repetitive peak reverse current
tp = 1 ms; square pulse
−
0.9
A
PESD3V3L2UM
−
0.8
A
Ptot
total power dissipation
Tamb = 25 °C; note 4
−
250
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 1 ms; square pulse; see Fig.4
−
6
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
ESD
electrostatic discharge
IEC 61000-4-2 (contact discharge)
15
−
kV
HBM MIL-Std 883
10
−
kV
PESD5V0L2UM
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
4. Device mounted on standard printed-circuit board.
ESD standards compliance
IEC 61000-4-2, level 4 (ESD)
>15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3
>4 kV
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
all diodes loaded; note 1
500
K/W
one diode loaded; note 2
290
K/W
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
2. FR4 single-sided copper 1 cm2.
2005 May 23
3
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
PESDxL2UM series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
−
1
1.2
V
PESD3V3L2UM
−
−
3.3
V
PESD5V0L2UM
−
−
5
V
VF
forward voltage
VRWM
reverse stand-off voltage
IRM
V(CL)R
reverse leakage current
PESD3V3L2UM
VR = 3.3 V
−
75
300
nA
PESD5V0L2UM
VR = 5 V
−
5
25
nA
Ipp = 1 A; notes 1 and 2
−
−
8
V
Ipp = 3 A; notes 1 and 2
−
−
12
V
Ipp = 1 A; notes 1 and 3
−
−
9
V
Ipp = 3 A; notes 1 and 3
−
−
13
V
Ipp = 1 A; notes 1 and 2
−
−
10
V
Ipp = 2.5 A; notes 1 and 2
−
−
13
V
Ipp = 1 A; notes 1 and 3
−
−
11
V
Ipp = 2.5 A; notes 1 and 3
−
−
15
V
PESD3V3L2UM
5.32
5.6
5.88
V
PESD5V0L2UM
6.46
6.8
7.14
V
−
1.3
−
mV/K
−
2.9
−
mV/K
PESD3V3L2UM
−
−
200
Ω
PESD5V0L2UM
−
−
100
Ω
f = 1 MHz; VR = 0
−
22
28
pF
f = 1 MHz; VR = 5
−
12
17
pF
f = 1 MHz; VR = 0
−
16
19
pF
f = 1 MHz; VR = 5
−
8
11
pF
clamping voltage
PESD3V3L2UM
PESD5V0L2UM
VBR
SZ
IF = 200 mA
breakdown voltage
temperature coefficient
8/20 µs pulse
IZ = 1 mA
IZ = 1 mA
PESD3V3L2UM
PESD5V0L2UM
rdiff
Cd
differential resistance
IR = 1 mA
diode capacitance
PESD3V3L2UM
PESD5V0L2UM
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
2005 May 23
4
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
MLE215
10
PESDxL2UM series
MLE216
26
Cd
handbook, halfpage
handbook, halfpage
IZSM
(A)
(pF)
22
18
PESD3V3L2UM
1
PESD3V3L2UM
14
PESD5V0L2UM
PESD5V0L2UM
10
10−1
10−2
10−1
1
tp (ms)
6
10
1
0
2
3
4
5
VR (V)
Tj = 25 °C; f = 1 MHz.
Fig.2
Non-repetitive peak reverse current as a
function of pulse time (square pulse).
Fig.3
MLE217
102
handbook, halfpage
Diode capacitance as a function of reverse
voltage; typical values.
MLE218
120
handbook, halfpage
Ipp
(%)
PZSM
100 % Ipp; 8 µs
(W)
80
e−t
PESD3V3L2UM
10
50 % Ipp; 20 µs
PESD5V0L2UM
40
1
10−2
10−1
1
tp (ms)
0
10
0
10
20
30
t (µs)
40
PZSM = VZSM x IZSM.
VZSM is the non-repetitive peak reverse voltage at IZSM.
Fig.4
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
2005 May 23
Fig.5
5
8/20 µs pulse waveform according to
IEC 61000-4-5.
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
handbook, full pagewidth
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
PESDxL2UM series
4 GHz DIGITAL
OSCILLOSCOPE
10 ×
ATTENUATOR
50 Ω
CZ
note 1
1
2
D.U.T
PESDxL2UM
Note 1: IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
3
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
GND2
PESD5V0L2UM
PESD3V3L2UM
GND
GND1
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
Fig.6 ESD clamping test set-up and waveforms.
2005 May 23
6
MLE219
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
PESDxL2UM series
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
2005 May 23
REFERENCES
IEC
JEDEC
JEITA
SC-101
7
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection
diode
PESDxL2UM series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2005 May 23
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp9
Date of release: 2005 May 23
Document order number: 9397 750 15162