Variable Capacitance Diodes MA2S377 Silicon epitaxial planar type Unit : mm For VCO and TCXO 0.15 min. + 0.05 • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 − 0.02 ■ Features 0.8 ± 0.1 + 0.05 0.27 − 0.02 0.15 min. 1.3 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C Unit VR 12 V Forward current (DC) IF 20 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.05 Reverse voltage (DC) 0.13 − 0.02 Rating 0 to 0.1 Symbol 0.7 ± 0.1 Parameter 1.7 ± 0.1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 7 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Symbol IR Conditions CD(2V) VR = 2 V, f = 1 MHz CD(10V) VR = 10 V, f = 1 MHz Capacitance ratio CD(2V)/CD(10V) Series rD Typ VR = 12 V Diode capacitance resistance* Min VR = 1 V, f = 470 MHz Max Unit 10 nA 3.40 pF 1.10 1.50 pF 2.20 2.80 0.60 Ω 2.80 0.40 Note) 1．Rated input/output frequency: 470 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2S377 Variable Capacitance Diodes CD VR 1.030 100 5 4 3 2 f = 1 MHz 25°C 1.020 Ta = 60°C VR = 2 V CD(Ta) CD(Ta = 25° ) 8 7 6 CD Ta IF V F 120 f = 1 MHz Ta = 25°C Forward current IF (mA) Diode capacitance CD (pF) 10 − 40°C 50 10 V 1.010 1.000 0.990 1 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Reverse voltage VR (V) IR Ta 100 VR = 28 V Reverse current IR (nA) 10 1 0.1 0.01 0.001 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 0 0.4 0.9 Forward voltage VF (V) 1.4 0.986 0 20 40 60 80 100 Ambient temperature Ta (°C)