PANASONIC MA3Z080E

Band Switching Diodes
MA3Z080D, MA3Z080E
Silicon epitaxial planar type
Unit : mm
For band switching
2.1 ± 0.1
1.25 ± 0.1
0.425
0.425
2.0 ± 0.2
1.3 ± 0.1
0.65 0.65
• Low forward dynamic resistance rf
• Less voltage dependence of diode capacitance CD
• S-mini type package containing two elements, allowing
downsizing of equipment and automatic insertion through the
taping package
Rating
Unit
Reverse voltage (DC)
VR
35
V
Forward current (DC)
IF
100
mA
Topr
−25 to +85
°C
Tstg
−55 to +150
°C
Operating ambient
Storage temperature
3
+ 0.1
0.15 − 0.05
0.9 ± 0.1
Symbol
temperature*
1
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
0.3 − 0
+ 0.1
■ Features
Note) * : Maximum ambient temperature during operation
1 : Cathode 1
2 : Cathode 2
3 : Anode 1, 2
EIAJ : SC-70
Flat S-Mini Type Package (3-pin)
Marking Symbol
• MA3Z080D : M1X
• MA3Z080E : M1Y
Internal Connection
1
1
3
3
2
2
D
E
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 33 V
0.01
100
nA
Forward voltage (DC)
VF
IF = 100 mA
0.92
1.0
V
Diode capacitance
CD
VR = 6 V, f = 1 MHz
0.9
1.2
pF
IF = 2 mA, f = 100 MHz
0.65
0.85
Ω
Forward dynamic resistance*
rf
Note) 1．Each characteristic is a standard for individual diodes
2．Rated input/output frequency: 100 MHz
3．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1
MA3Z080D, MA3Z080E
Band Switching Diodes
IF  V F
IR  T a
CD  VR
1 000
10
Ta = 25°C
100
f = 1 MHz
Ta = 25°C
VR = 33 V
10
1
Reverse current IR (nA)
Diode capacitance CD (pF)
Forward current IF (mA)
5
100
3
2
1
0.5
0.3
10
1
0.1
0.2
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
0
4
8 12 16 20 24 28 32 36 40
Reverse voltage VR (V)
Forward voltage VF (V)
rf  IF
0.8
0.6
0.4
0.2
0
1
3
10
Forward current IF
2
30
(mA)
100
IF = 2 mA
Ta = 25°C
0.8
0.6
0.4
0.2
0
10
30
100
300
Frequency f (MHz)
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
rf  f
1.0
f = 100 MHz
Ta = 25°C
Forward dynamic resistance rf (Ω)
Forward dynamic resistance rf (Ω)
1.0
0.01
1 000