MA111 Variable Capacitance Diodes MA360J Silicon epitaxial planer type Unit : mm For UHF and VHF electronic tuners INDICATES CATHODE ● Small series resistance rD 1 2 0.4±0.15 +0.1 Large capacity variation ratio 0.45–0.05 ● 1.25±0.1 0.4±0.15 ■ Features 1.7±0.1 0.9±0.1 +0.1 0.16–0.06 2.5±0.2 ■ Absolute Maximum Ratings (Ta= 25˚C) Parameter Symbol Reverse voltage (DC) Rating Unit VR 30 Peak reverse voltage VRM * 35 V Forward current (DC) IF 20 mA Junction temperature Tj 150 ˚C Storage temperature Tstg – 55 to +150 ˚C 1 : Anode 2 : Cathode S-Mini Type Package (Flat 2-pin) V Marking Symbol : 6A * RL =10kΩ ■ Electrical Characteristics (Ta= 25˚C) Parameter Reverse current (DC) Diode capacitance Condition Symbol min typ max Unit IR VR= 28V 10 nA CD(2V) VR= 2V, f= 1MHz 14.360 16.340 pF CD(25V) VR= 25V, f= 1MHz 2.089 2.448 pF CD(10V) VR= 10V, f= 1MHz 5.433 6.369 pF CD(17V) VR= 17V, f= 1MHz 2.945 3.452 pF 5.95 7.26 — Capacitance ratio C D(2V)/CD(25V) Diode capacitance deviation ∆C CD (2V) (10V) (17V) (25V) 2 % Series resistance rD*1 CD= 9pF, f= 470MHz 0.6 Ω Note 1. Rated input/output frequency : 470MHz 2. *1 : r D measurement device : YHP MODEL 4191A RF IMPEDANCE ANALYZER ■ Marking 6A MA360J Variable Capacitance Diodes IF – VF CD – VR 100 120 25˚C 60 40 20 VR=28V IR (nA) 20 10 5 3 10 1 0.1 2 0 1 0 0.2 0.4 0.6 0.8 Forward voltage 1.0 1.2 VF (V) 1.04 f=1MHz 1.03 1.02 VR=2V 1.01 10V 17V 25V 1.00 0.99 0.98 0 20 40 60 Ambient temperature 80 Ta (˚C) 0.01 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage CD – Ta CD (Ta) CD (Ta=25˚C) 30 Reverse current CD (pF) –40˚C Ta=60˚C 80 100 f=1MHz Ta=25˚C 50 Diode capacitance Forward current IF (mA) 100 IR – Ta 100 VR (V) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C)