Variable Capacitance Diodes MA2S372 Silicon epitaxial planar type Unit : mm For UHF and VHF electronic tuners 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.27 − 0.02 • Large capacitance ratio • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.8 ± 0.1 ■ Features 1.3 ± 0.1 Symbol Rating Unit Reverse voltage (DC) VR 32 V Peak reverse voltage* VRM 34 V Forward current (DC) IF 20 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.05 0 to 0.1 Parameter 0.7 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.13 − 0.02 1.7 ± 0.1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: L Note) * : RL = 2.2 kΩ ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Capacitance ratio Symbol IR Conditions Min VR = 30 V Typ Max Unit 10 nA CD(2V) VR = 2 V, f = 1 MHz 14.220 15.473 pF CD(25V) VR = 25 V, f = 1 MHz 2.132 2.287 pF CD(10V) VR = 10 V, f = 1 MHz 5.307 6.128 pF CD(17V) VR = 17 V, f = 1 MHz 2.909 3.411 pF CD(2V)/CD(25V) 6.22 CD(10V)/CD(17V) 1.70 1.96 Diode capacitance deviation ∆C CD(2V)(10V)(17V)(25V) 2.0 % Series resistance* rD CD = 9 pF, f = 470 MHz 0.45 Ω Note) 1．Rated input/output frequency: 470 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2S372 Variable Capacitance Diodes CD VR 100 f = 1 MHz Ta = 25°C 20 10 5 3 Ta = 60°C 80 4 8 12 16 20 24 28 32 36 40 IR Ta 100 VR = 30 V 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) VR = 2 V − 40°C 60 40 0 0 f = 1 MHz 1.03 1.02 25 V 10 V 17 V 1.01 1.00 20 Reverse voltage VR (V) Reverse current IR (nA) 25°C CD(Ta) CD(Ta = 25°C) 30 2 2 1.04 100 Forward current IF (mA) Diode capacitance CD (pF) 50 1 CD Ta IF V F 120 0.99 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1.2 0.98 0 20 40 60 80 Ambient temperature Ta (°C) 100