BGS15GA14 Data Sheet (725 KB, EN)

BGS15GA14
SP5T Diversity Antenna Switch with GPIO Interface
Data Sheet
Revision 3.0 - 2016-02-11
Edition 2016-02-11
Published by Infineon Technologies AG
81726 Munich, Germany
c
2016
Infineon Technologies AG
All Rights Reserved.
LEGAL DISCLAIMER
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
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safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in
the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
BGS15GA14
Revision History
Document No.: BGS15GA14__v3.0.pdf
Revision History: Rev. v3.0
Previous Version: 2.0
Page
Subjects (major changes since last revision)
5
Maximum frequency changed to 6 GHz
8
IL, RL, and ISO performance added for frequency range 5 GHz to 6 GHz in Table 6
12
Carrier tape drawing updated in Figure 6
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Data Sheet
3
Revision 3.0 - 2016-02-11
BGS15GA14
Contents
Contents
1 Features
5
2 Product Description
5
3 Maximum Ratings
6
4 Operation Ranges
7
5 RF Characteristics
8
6 GPIO Specification
9
7 Package related information
10
List of Figures
1
2
3
4
5
6
BGS15GA14 block diagram
Footprint, top view . . . . .
Package Outline Drawing .
Land Pattern Drawing . . .
Laser marking . . . . . . .
Carrier Tape . . . . . . . . .
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List of Tables
1
2
3
4
5
6
7
8
9
10
11
12
Ordering Information . . . .
Maximum Ratings, Table I .
Maximum Ratings, Table II .
Operation Ranges . . . . .
RF Input Power . . . . . . .
RF Characteristics . . . . .
Switching Time . . . . . . .
IMD2 Testcases . . . . . .
IMD3 Testcases . . . . . .
GPIO Truth Table . . . . . .
Mechanical Data . . . . . .
Pin definition . . . . . . . .
Data Sheet
4
Revision 3.0 - 2016-02-11
BGS15GA14
BGS15GA14
1 Features
• 5 high-linearity, interchangeable RX ports
• Low insertion loss
• Low harmonic generation
• High port-to-port-isolation
• Suitable for Edge / C2K / LTE / WCDMA Applications
• 0.1 to 6.0 GHz coverage
• No decoupling capacitors required if no DC applied on RF lines
• On chip control logic including ESD protection
• General Purpose Input-Output (GPIO) Interface
• Small form factor 2.0 mm x 2.0 mm
• No power supply blocking required
• High EMI robustness
• RoHS and WEEE compliant package
2 Product Description
The BGS15GA14 is a Single Pole Five Throw (SP5T) Diversity Switch optimized for wireless applications up to 6.0
GHz. It is part of SP3T-SP8T diversity switch family designed to meet the requirements of chipset reference designs.
The module comes in a miniature ATSLP package and comprises of a CMOS SP5T switch with integrated GPIO
interface. This RF switch is a perfect solution for multimode handsets based on LTE and WCDMA. The switch
device configuration is shown in Fig. 1.
The switch is controlled via a GPIO interface. It features DC-free RF ports and unlike GaAs technology, external DC
blocking capacitors at the RF ports are only required if DC voltage is applied externally.
Table 1: Ordering Information
Type
Package
Marking
BGS15GA14
ATSLP-14
G5
Data Sheet
5
Revision 3.0 - 2016-02-11
BGS15GA14
RX1
RX2
RX3
ANT
RX4
RX5
SP5T
VDD
V1
GPIO
Interface
V2
V3
GND
Figure 1: BGS15GA14 block diagram
3 Maximum Ratings
Table 2: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Frequency Range
f
0.1
–
–
GHz
1)
Supply voltage
Vdd
-0.5
–
3.6
V
–
C
–
C
–
Storage temperature range
TSTG
-55
–
150
◦
Junction temperature
Tj
–
–
125
◦
RF input power at all Rx ports
PRF _Rx
–
–
32
dBm
CW
ESD capability, CDM
2)
VESDCDM
−500
–
+500
V
All pins
ESD capability, HBM
3)
VESDHBM
−1
–
+1
kV
Digital, digital versus RF
−1
–
+1
V
RF
−8
–
+8
kV
ANT versus system GND,
ESD capability, system level
4)
VESDANT
with 27 nH shunt inductor
1)
There is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be 0V.
Field-Induced Charged-Device Model JESD22-C101. Simulates charging/discharging events that occur in production equipment and
processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
3) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R = 1.5 kΩ, C = 100 pF).
4) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
2)
Data Sheet
6
Revision 3.0 - 2016-02-11
BGS15GA14
Table 3: Maximum Ratings, Table II at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Thermal resistance junction - solder-
Values
Unit
Note / Test Condition
–
K/W
–
–
0
V
No DC voltages allowed on
–
Vdd +0.7
V
–
Unit
Note / Test Condition
Min.
Typ.
Max.
RthJS
–
60
VRFDC
0
VCtrlx
-0.7
ing point
Maximum DC-voltage on RF-Ports
and RF-Ground
RF-Ports
GPIO control voltage levels
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Values
Min.
Typ.
Max.
Supply voltage
Vdd
2.4
3.0
3.4
V
–
Supply current
Idd
–
75
200
µA
–
GPIO control voltage high
VCtrl_H
1.35
–
Vdd
V
–
GPIO control voltage low
VCtrl_L
0
–
0.45
V
–
GPIO control input capaci-
CCtrl
–
–
2
pF
–
TA
-30
25
85
◦
–
tance
Ambient temperature
C
Table 5: RF Input Power
Parameter
Symbol
Rx ports (50 Ω)
PRF _Rx
Data Sheet
Values
Min.
Typ.
Max.
–
–
28
7
Unit
Note / Test Condition
dBm
–
Revision 3.0 - 2016-02-11
BGS15GA14
5 RF Characteristics
Table 6: RF Characteristics at TA = −30 ◦C...85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 2.4 V...3.4 V, unless
otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
–
0.30
0.45
dB
698–960 MHz
–
0.40
0.55
dB
1428–1990 MHz
–
0.40
0.55
dB
1920–2170 MHz
–
0.45
0.60
dB
2170–2690 MHz
–
0.55
0.70
dB
3400–3600 MHz
–
0.55
0.70
dB
3600–3800 MHz
–
0.65
0.75
dB
5000–6000 MHz
19
22
–
dB
698–960 MHz
17
20
–
dB
1428–1990 MHz
16
19
–
dB
1920–2170 MHz
15
18
–
dB
2170–2690 MHz
14
16
–
dB
3400–3600 MHz
13
15
–
dB
3600–3800 MHz
13
15
–
dB
5000–6000 MHz
32
45
–
dB
698–960 MHz
25
42
–
dB
1428–1990 MHz
24
40
–
dB
1920–2170 MHz
23
38
–
dB
2170–2690 MHz
20
35
–
dB
3400–3600 MHz
19
33
–
dB
3600–3800 MHz
18
27
–
dB
5000–6000 MHz
100
–
dBc
25 dBm, 50 Ω, CW mode
90
–
dBc
25 dBm, 50 Ω, CW mode
1)
Insertion Loss
All Rx Ports
Return Loss
IL
1)
All Rx Ports
RL
1)
Isolation
All Rx Ports
ISO
1)
Harmonic Generation (UMTS Band 1, Band 5)
2nd harmonic generation
rd
3
harmonic generation
PH2
90
PH3
80
1)
Intermodulation Distortion (UMTS Band 1, Band 5)
2nd order intermodulation
IMD2 low
–
-105
-100
dBm
IMT, US Cell (see Tab. 8)
3rd order intermodulation
IMD3
–
-110
-105
dBm
IMT, US Cell (see Tab. 9)
IMD2 high
–
-115
-110
dBm
IMT, US Cell (see Tab. 8)
nd
2
order intermodulation
1) On
application board without any matching components.
Data Sheet
8
Revision 3.0 - 2016-02-11
BGS15GA14
Table 7: Switching Time at TA = 25 ◦C, PIN = 0 dBm, Supply Voltage VDD= 2.4 V–3.4 V, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
10 % to 90 % RF signal
Switching Time
RF Rise Time
tRT
–
–
2
µs
Switching Time
tST
–
2
4
µs
Power Up Settling Time
tPup
–
10
25
µs
50 % Ctrl signal to 90 % RF
signal
After power down mode
Table 8: IMD2 Testcases
Band
CW tone 1 (MHz)
CW tone 1 (dBm)
IMT
1950
20
US Cell
835
20
CW tone 2 (MHz)
190 (IMD2 low)
4090 (IMD2 high)
45 (IMD2 low)
1715 (IMD2 high)
CW tone 2 (dBm)
-15
-15
Table 9: IMD3 Testcases
Band
CW tone 1 (MHz)
CW tone 1 (dBm)
CW tone 2 (MHz)
CW tone 2 (dBm)
IMT
1950
20
1760
-15
US Cell
835
20
790
-15
6 GPIO Specification
Table 10: Modes of Operation (Truth Table)
Control Inputs
Data Sheet
State
Mode
V1
V2
V3
1
RX1-ANT
0
0
0
2
RX2-ANT
0
0
1
3
RX3-ANT
0
1
0
4
RX4-ANT
0
1
1
5
RX5-ANT
1
0
0
6
50Ω
1
0
1
7
RF3/RF5-ANT
1
1
0
8
Shutdown
1
1
1
9
Revision 3.0 - 2016-02-11
BGS15GA14
7 Package related information
The switch has a package size of 2000 µm in x-dimension and 2000 µm in y-dimension with a maximum deviation
of ±50 µm in each dimension. Fig. 2 shows the footprint from top view. The definition of each pin can be found in
Tab. 12. In addition a recommendation for the land pattern is displayed in Fig. 4 followed by information regarding
laser marking (see Fig. 5).
Table 11: Mechanical Data
Parameter
Symbol
Value
Unit
Package X-Dimension
X
2000 ± 50
µm
Package Y-Dimension
Y
2000 ± 50
µm
Package Height
H
0.65 max
µm
NC
ANT
NC
14
13
12
RX5
1
11
NC
RX3
2
10
RX4
RX1
3
9
RX2
VDD
4
8
NC
Top View
5
6
7
V3
V2
V1
Figure 2: Footprint, top view
Table 12: Pin Definition
No.
Name
Pin Type
Function
0
GND
GND
RF ground; die pad
1
RX5
I/O
RX port 5
2
RX3
I/O
RX port 3
3
RX1
I/O
RX port 1
4
VDD
PWR
VDD supply
5
V3
I
GPIO control pin
6
V2
I
GPIO control pin
7
V1
I
GPIO control pin
8
NC
9
RX2
I/O
RX port 2
10
RX4
I/O
RX port 4
11
NC
Not connected
12
NC
Not connected
13
ANT
14
NC
Data Sheet
Not connected
I/O
Antenna port
Not connected
10
Revision 3.0 - 2016-02-11
BGS15GA14
Bottom view
0.1 B
0.18 ±0.05
8x
8
9
10
11
0.1 A
0.2 ±0.05
8x
7
12
6
13
5
0.1 A
Pin 1 marking
3
2
1
0.45
0.1 A
14
4
B
1 ±0.05
0.2 ±0.05
6x
0.4
1 ±0.05
1.69
2 x 0.4 = 0.8
0.02 MAX.
STANDOFF
2 ±0.05
2 ±0.05
A
0.1 B
0.6 ±0.05
0.1 B
Top view
0.18 ±0.05
6x
3 x 0.45 = 1.35
1.69
Figure 3: Package Outline Drawing
14x 0.25
14x 0.25
0.45
0.4
0.845
0.85
0.845
1
0.4
14x 0.23
0.85
14x 0.23
1
0.45
0.845
0.845
Copper
0.225
0.225
Stencil apertures
Solder mask
Figure 4: Land Pattern Drawing
Data Sheet
11
Revision 3.0 - 2016-02-11
BGS15GA14
12
Type code
Date code
(YW)
Pin 1 marking
Figure 5: Laser marking
4
8
2.2
Pin 1
marking
0.75
2.2
Figure 6: Carrier Tape
Data Sheet
12
Revision 3.0 - 2016-02-11
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG